DMG2305UX
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BV
DSS
-20V
R
DS(ON)
Max
52mΩ @V
GS
= -4.5V
100mΩ @V
GS
= -2.5V
Package
SOT23
I
D
Max
T
A
= +25°
C
-5.0A
-3.6A
Features
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
An Automotive-Compliant Part is Available Under Separate
Datasheet (DMG2305UXQ)
Description
This MOSFET is designed to minimize the on-state resistance
(R
DS(ON)
), yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Applications
Backlighting
Power Management Functions
DC-DC Converters
Motor Control
Mechanical Data
Case: SOT23
Case Material: Molded Plastic, ―Green‖ Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Terminals Connections: See Diagram Below
Weight: 0.009 grams (Approximate)
D
D
G
S
Top View
Internal Schematic
G
S
Top View
Ordering Information
(Note 4)
Part Number
DMG2305UX-7
DMG2305UX-13
Notes:
Compliance
Standard
Standard
Case
SOT23
SOT23
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
Lead-free.
3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
23X = Product Type Marking Code
YM = Date Code Marking
Y or Y= Year (ex: F = 2018)
M = Month (ex: 9 = September)
23X
Date Code Key
Year
2009
Code
W
Month
Code
~
~
Jan
1
2016
D
Feb
2
2017
E
Mar
3
2018
F
Apr
4
YM
2019
G
May
5
2020
H
Jun
6
2021
I
Jul
7
2022
J
Aug
8
2023
K
Sep
9
2024
L
Oct
O
2025
M
Nov
N
2026
N
Dec
D
DMG2305UX
Document number: DS36196 Rev. 7 - 2
1 of 6
www.diodes.com
September 2018
© Diodes Incorporated
DMG2305UX
Maximum Ratings
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
Drain-Source Voltage
Gate-Source Voltage
T
A
= +25°
C
T
A
= +70°
C
Continuous Drain Current (Note 5) V
GS
= -4.5V
T
A
= +25°
C
t<10s
T
A
= +70°
C
Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) (Note 6)
Steady
State
Symbol
V
DSS
V
GSS
I
D
I
D
I
DM
Value
-20
±8
-4.2
-3.3
-5.0
-4.0
-15
Unit
V
V
A
A
A
Thermal Characteristics
Characteristic
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Case (Note 7)
Operating and Storage Temperature Range
Steady State
t<10s
Symbol
P
D
R
θJA
R
θJC
T
J,
T
STG
Value
1.4
90
64
33
-55 to +150
Unit
W
°
C/W
°
C/W
°
C/W
°
C
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS
(Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS
(Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
(@T
A
= +25° unless otherwise specified.)
C,
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(TH)
R
DS(ON)
|Y
FS
|
C
iss
C
oss
C
rss
R
g
Q
g
Q
gs
Q
gd
t
D(ON)
t
R
t
D(OFF)
t
F
Min
-20
-0.5
Typ
—
40
52
68
9
808
85
77
15.2
10.2
1.3
2.2
10.8
13.7
79.3
34.7
Max
-1.0
±100
-0.9
52
100
200
Unit
V
µA
nA
V
mΩ
s
pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
Test Condition
V
GS
= 0V, I
D
= -250µA
V
DS
= -20V, V
GS
= 0V
V
GS
= ±8V, V
DS
= 0V
V
DS
= V
GS
, I
D
= -250µA
V
GS
= -4.5V, I
D
= -4.2A
V
GS
= -2.5V, I
D
= -3.4A
V
GS
= -1.8V, I
D
= -2A
V
DS
= -5V, I
D
= -4A
V
DS
= -15V, V
GS
= 0V
f = 1.0MHz
V
GS
= 0V, V
DS
= 0V, f = 1.0MHz
V
GS
= -4.5V, V
DS
= -4V,
I
D
= -3.5A
T
J
= +25°
C
Forward Transfer Admittance
DYNAMIC CHARACTERISTICS
(Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
SWITCHING CHARACTERISTICS
(Note 8)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
V
DS
= -4V, V
GS
= -4.5V,
R
g
= 6Ω, I
D
= -1A
5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate.
6. Repetitive rating, pulse width limited by junction temperature.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
DMG2305UX
Document number: DS36196 Rev. 7 - 2
2 of 6
www.diodes.com
September 2018
© Diodes Incorporated
DMG2305UX
20.0
18.0
16.0
-I
D
, DRAIN CURRENT (A)
V
GS
= -3.0V
V
GS
= -8.0V
V
GS
= -4.5V
V
GS
= -2.0V
20
V
DS
= -5.0V
T
A
= -55°
C
T
A
= 25°
C
T
A
= 150°
C
14.0
12.0
10.0
8.0
6.0
4.0
2.0
0.0
0
1
V
GS
= -1.2V
V
GS
= -1.5V
V
GS
= -2.5V
V
GS
= -1.8V
) 15
A
(
T
N
E
R
R
U 10
C
N
I
A
R
D
,
D
I
5
-
-I
D
, DRAIN CURRENT (A)
T
A
= 85°
C
T
A
= 125°
C
2
3
4
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
5
0
0
0.5
1
1.5
2
2.5
-V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
V
GS
= -4.5V
3
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
0.1
0.08
0.07
T
A
= 125癈
C
°
0.08
T
A
=150°
C
T
A
= 150癈
0.06
T
T
A
= 85癈
C
A
=85°
0.06
V
GS
= -2.5V
0.05
T
A
=25
25癈
C
T =
°
A
0.04
0.03
0.02
0.01
0
T =-55°
C
T
A
A
= -55癈
0.04
V
GS
= -4.5V
0.02
0
0
5
10
15
-I
D
, DRAIN SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
V
GS
= -2.5V
I
D
= -5.0A
20
0
5
10
15
-I
D
, DRAIN SOURCE CURRENT (A)
Figure 4 Typical On-Resistance vs.
Drain Current and Temperature
20
R
DS(on)
, DRAIN-SOURCE ON-RESISTANCE (
)
1.6
0.1
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
C)
Figure 6 On-Resistance Variation with Temperature
V
GS
= -4.5V
I
D
= -10A
V
GS
= -2.5V
I
D
= -5A
R
DS(ON)
, DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
1.4
1.2
V
GS
= -4.5V
I
D
= -10A
1
0.8
0.6
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
C)
Figure 5 On-Resistance Variation with Temperature
DMG2305UX
Document number: DS36196 Rev. 7 - 2
3 of 6
www.diodes.com
September 2018
© Diodes Incorporated
DMG2305UX
1.5
20
18
-
V
GS(TH)
, GATE THRESHOLD VOLTAGE (V)
1.2
16
-I
S
, SOURCE CURRENT (A)
14
12
10
8
T
A
= 25
C
0.9
-I
D
= 1mA
0.6
-I
D
=
250A
250礎
6
4
2
0.3
-25
0
25
50
75 100 125 150
C)
T
A
, AMBIENT TEMPERATURE
(°
)
(癈
Figure 7 Gate Threshold Variation vs. Ambient Temperature
0
-50
0
0
0.3
0.6
0.9
1.2
1.5
-V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 8 Diode Forward Voltage vs. Current
100
R
DS(ON)
Limited
P
W
=100µs
P
W
=1ms
-I
D
, DRAIN CURRENT (A)
10
P
W
=10ms
1
P
W
=100ms
P
W
=1s
T
J(Max)
= 150℃
T
C
= 25℃
Single Pulse
P
W
=10s
DUT on 1*MRP Board
DC
V
GS
= -10V
0.1
1
10
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 9. SOA, Safe Operation Area
100
0.1
0.01
DMG2305UX
Document number: DS36196 Rev. 7 - 2
4 of 6
www.diodes.com
September 2018
© Diodes Incorporated
DMG2305UX
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT23
H
J
All 7°
GAUGE PLANE
0.25
K1
K
a
A
M
L
L1
C
B
D
F
G
SOT23
Dim
Min
Max
Typ
A
0.37
0.51
0.40
B
1.20
1.40
1.30
C
2.30
2.50
2.40
D
0.89
1.03 0.915
F
0.45
0.60 0.535
G
1.78
2.05
1.83
H
2.80
3.00
2.90
J
0.013 0.10
0.05
K
0.890 1.00 0.975
K1
0.903 1.10 1.025
L
0.45
0.61
0.55
L1
0.25
0.55
0.40
M
0.085 0.150 0.110
a
0°
8°
–
All Dimensions in mm
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT23
Y
Y1
C
Dimensions
C
X
X1
Y
Y1
Value (in mm)
2.0
0.8
1.35
0.9
2.9
X
X1
DMG2305UX
Document number: DS36196 Rev. 7 - 2
5 of 6
www.diodes.com
September 2018
© Diodes Incorporated
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