NOT RECOMMENDED FOR NEW DESIGN
USE
DMP3125L
DMG2307L
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BV
DSS
R
DS(ON)
max
90mΩ @ V
GS
= -10V
-30V
134mΩ @ V
GS
= -4.5V
-3.1A
I
D
max
T
A
= +25°
C
-3.8A
Features and Benefits
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data
Description and Applications
This MOSFET is designed to minimize the on-state resistance
(R
DS(ON)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
General Purpose Interfacing Switch
Power Management Functions
Load Switch for Portable Devices
Case: SOT23
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See Diagram
Terminals: Finish
Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
e3
Weight: 0.08 grams (Approximate)
Top View
Internal Schematic
Top View
Ordering Information
(Note 4)
Part Number
DMG2307L-7
Notes:
Case
SOT23
Packaging
3,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
G24 = Product Type Marking Code
YM = Date Code Marking
Y or = Year (ex: F = 2018)
M = Month (ex: 9 = September)
Date Code Key
Year
2018
Code
F
Month
Code
Jan
1
2019
G
Feb
2
2020
H
Mar
3
2021
I
Apr
4
2022
J
May
5
Jun
6
2023
K
Jul
7
2024
L
Aug
8
2025
M
Sep
9
2026
N
Oct
O
2027
O
Nov
N
2028
P
Dec
D
August 2018
DMG2307L
Document number: DS35415 Rev. 5 - 3
1 of 7
www.diodes.com
© Diodes Incorporated
NOT RECOMMENDED FOR NEW DESIGN
USE
DMP3125L
DMG2307L
Maximum Ratings
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 5) V
GS
= -10V
Continuous Drain Current (Note 6) V
GS
= -10V
Continuous Drain Current (Note 6) V
GS
= -10V
Continuous Drain Current (Note 6) V
GS
= -4.5V
Pulsed Drain Current (Note 6)
Steady
State
Steady
State
t
≦10sec
Steady
State
T
A
= +25°
C
T
A
= +70°
C
T
A
= +25°
C
T
A
= +70°
C
T
A
= +25°
C
T
A
= +70°
C
T
A
= +25°
C
T
A
= +70°
C
Symbol
V
DSS
V
GSS
I
D
I
D
I
D
I
D
I
DM
Value
-30
±20
-2.5
-2.0
-3.8
-3.0
-4.6
-3.6
-3.1
-2.5
-20
Unit
V
V
A
A
A
A
A
Thermal Characteristics
(@T
A
= +25° unless otherwise specified.)
C,
Symbol
P
D
R
θJA
P
D
R
θJA
P
D
R
θJA
T
J,
T
STG
Value
0.76
159
1.36
94
1.9
65.8
-55 to +150
Unit
W
°
C/W
W
°
C/W
W
°
C/W
°
C
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Total Power Dissipation (Note 6) t
≦
10sec
Thermal Resistance, Junction to Ambient (Note 6) t
≦
10sec
Operating and Storage Temperature Range
Electrical Characteristics
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 6)
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (V
GS
= -4.5V)
Total Gate Charge (V
GS
= -10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(TH)
R
DS(ON)
|Y
fs
|
V
SD
C
iss
C
oss
C
rss
R
g
Q
g
Q
g
Q
gs
Q
gd
t
D(ON)
t
R
t
D(OFF)
t
F
Min
-30
-1.0
Typ
70
105
4.8
-0.75
371.3
51.3
45.9
17
4.0
8.2
0.9
1.2
4.8
7.3
22.4
13.4
Max
-1.0
±100
-3.0
90
134
-1.0
Unit
V
μA
nA
V
mΩ
S
V
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
Test Condition
V
GS
= 0V, I
D
= -250μA
V
DS
= -30V, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
V
DS
= V
GS
, I
D
= -250μA
V
GS
= -10V, I
D
= -2.5A
V
GS
= -4.5V, I
D
= -2.5A
V
DS
= -10V, I
D
= -2.5A
V
GS
= 0V, I
S
= -1A
V
DS
= -15V, V
GS
= 0V,
f = 1.0MHz
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
V
GS
= -10V, V
DS
= -15V,
I
D
= -3A
@T
C
= +25°
C
V
DS
= -15V, V
GS
= -10V,
R
L
= 15Ω, R
G
= 6Ω,
I
D
= -1A
5. Device mounted on FR-4 PCB, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
DMG2307L
Document number: DS35415 Rev. 5 - 3
2 of 7
www.diodes.com
August 2018
© Diodes Incorporated
NOT RECOMMENDED FOR NEW DESIGN
USE
DMP3125L
8.0
V
GS
=-3.5V
V
GS
=-3.0V
DMG2307L
T
A
= -55C
T
A
= 25C
T
A
= 125C
8
V
DS
= -5.0V
T
A
= 150C
-I
D
, DRAIN CURRENT (A)
)
A
(
T
N
E
R
R
U
C 4.0
N
I
A
R
D
,
D
I 2.0
6.0
-I
D
, DRAIN CURRENT (A)
V
GS
=-4.0V
V
GS
=-4.5V
V
GS
=-10V
V
GS
=-2.5V
)
A
(
T
N
E
R
R
U
C
N
I
A
R
D
,
D
I
6
T
A
= 85C
4
2
V
GS
=-2.0V
0.0
0
0
0.5
1.5 2 2.5 3 3.5 4 4.5
-V
DS
, DRAIN -SOURCE VOLTAGE(V)
Fig. 1 Typical Output Characteristics
1
5
0
0.5
1 1.5 2 2.5 3 3.5 4 4.5
-V
GS
, GATE SOURCE VOLTAGE(V)
Fig. 2 Typical Transfer Characteristics
5
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (Ω)
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (Ω)
0.4
)
(
E 0.35
C
N
A
T
0.3
S
I
S
E
R 0.25
-
N
O
E
0.2
C
R
U
O 0.15
S
-
N
I
A
0.1
R
D
,
)
N
O
0.05
(
R
S
D
V
GS
=-2.5V
V
GS
=-4.5V
)
(
E
C
N
A
T
S
I
S
E
R
-
N
O
E
C
R
U
O
S
-
N
I
A
R
D
,
)
N
R
0.2
V
GS
= -4.5V
T
A
= 150C
T
A
= 125C
0.16
0.12
T
A
= 85C
0.08
T
A
= 25C
0.04
T
A
= -55C
V
GS
=-10V
O
(
S
D
0
0
0
2
4
6
-I
D
, DRAIN SOURCE CURRENT(A)
Fig. 4 Typical On-Resistance vs.
Drain Current and Temperature
8
0
2
4
6
-I
D
, DRAIN SOURCE CURRENT(A)
Fig. 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
8
V
GS
=-4.5V
I
D
=-2A
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (Ω)
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE
(NORMALIZED)
1.6
E
C
N
A
T
S
1.4
I
S
E
R
-
N
O )
d 1.2
E e
z
C l
i
a
R m
U r
O o
S N
1
- (
N
I
A
R
D
,
)
N
0.8
O
R
(
S
D
0.2
)
(
E
C
N
A
T
S
I
S
E
R
-
N
O
E
C
R
U
O
S
-
N
I
A
R
D
,
)
N
R
-25
0
25
50
75
100
125
150
0.16
V
GS
=-4.5V
I
D
=-2A
V
GS
=-10V
I
D
=-2.7A
0.12
0.08
V
GS
=-10V
I
D
=-2.7A
0.04
0.6
-50
O
(
S
D
0
-50
T
J
, JUNCTION TEMPERATURE(C)
Fig. 5 On-Resistance Variation with Temperature
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE(C)
Fig. 6 On-Resistance Variation with Temperature
August 2018
© Diodes Incorporated
DMG2307L
Document number: DS35415 Rev. 5 - 3
3 of 7
www.diodes.com
NOT RECOMMENDED FOR NEW DESIGN
USE
DMP3125L
2
DMG2307L
8
-V
GS(TH)
, GATE THRESHOLD VOLTAGE (V)
V
GS(TH)
, GATE THRESHOLD VOLTAGE(V)
-I
S
, SOURCE CURRENT (A)
1.6
I
D
= -1mA
1.2
I
D
= -250
μ
A
0.8
0.4
)
A
(
T
N
E
R
R
U
C
E
C
R
U
O
S
,
S
I
6
4
2
0
-50
0
-25
0
25
50
75 100 125 150
(°
C)
T
A
, AMBIENT TEMPERATURE (癈 )
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
0
0.2
0.4
0.6
0.8
1
1.2
-V
SD
, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
1.4
1000
f = 1MHz
10000
T
A
=150°
C
C
T
, JUNCTION CAPACITANCE (pF)
)
F
p
(
E
C
N
A
T
I
C
A
P
A 100
C
N
O
I
T
C
N
U
J
,
T
C
10
-I
DSS
, LEAKAGE CURRENT (nA)
C
iss
C
oss
C
rss
) 1000
A
n
(
T
N
E
R
100
R
U
C
E
G
A
10
K
A
E
L
,
S
S
D
1
I
T
A
=125°
C
T
A
=85°
C
T
A
=25°
C
0.1
0
5
10
15
20
25
30
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Junction Capacitance
5
10
15
20
25
30
-V
DS
, DRAIN-SOURCE VOLTAGE(V)
Fig. 10 Typical Drain-Source Leakage Current vs. Voltage
100
R
DS(ON)
Limited
-I
D
(A) @P
W
=1ms
-I
D
(A) @P
W
=100μs
0
10
-V
GS
,
,
GATE-SOURCE VOLTAGE
(V)
V
GS
GATE-SOURCE VOLTAGE
(V)
8
6
V
DS
=-15V
I
D
=-3A
4
2
)
A 10
(
T
N
E
R
R
U
C
1
N
I
A
R
D
,
D
I
- 0.1
-I
D
, DRAIN CURRENT (A)
-I
D
(A) @
P=10µs
P
W
=10μs
W
-I
D
(A) @ DC
-I
D
(A) @P
W
=10s
-I
D
(A) @P
W
=1s
-I
D
(A) @P
W
=100ms
T
J(MAX)
= 150C
T
A
= 25C
Single Pulse
-I
D
(A) @P
W
=10ms
0
0
2
4
6
8
Q
g
, TOTAL GATE CHARGE (nC)
Fig. 11 Gate-Charge Characteristics
10
0.01
0.1
1
10
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 12 SOA, Safe Operation Area
100
DMG2307L
Document number: DS35415 Rev. 5 - 3
4 of 7
www.diodes.com
August 2018
© Diodes Incorporated
NOT RECOMMENDED FOR NEW DESIGN
USE
DMP3125L
DMG2307L
1
r(t), TRANSIENT THERMAL RESISTANCE
r(t) @ D=0.5
r(t) @ D=0.3
r(t) @ D=0.7
r(t) @ D=0.9
0.1
r(t) @ D=0.1
r(t) @ D=0.05
r(t) @ D=0.02
0.01
r(t) @ D=0.01
r(t) @ D=0.005
0.001
0.00001
r(t) @ D=Single Pulse
R
R
JA
(t)=r(t) *
*
R
JA
θJA
(t) = r(t) R
θJA
=54癈 /W
R
R
JA
= 54℃/W
θJA
Duty Cycle, D=t1/
/
t2
Duty Cycle, D = t1 t2
0.0001
0.001
0.01
0.1
1
t1, PULSE DURATION TIMES (sec)
t1, PLUSE DURATION TIME (sec)
Fig. 13
Transient Thermal Resistance
Fig.13
Transient Thermal Resistance
10
100
1000
DMG2307L
Document number: DS35415 Rev. 5 - 3
5 of 7
www.diodes.com
August 2018
© Diodes Incorporated
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