DMG301NU
25V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
25V
R
DS(ON)
4Ω @ V
GS
= 4.5V
5Ω @ V
GS
= 2.7V
I
D
T
A
= +25°C
0.26A
0.23A
Features
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Small Surface Mount Package
ESD Protected Gate (>6kV Human Body Model)
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description
This new generation MOSFET is designed to minimize the on-state
resistance (R
DS(ON)
) and yet maintain superior switching performance,
making it ideal for high efficiency power management applications.
Applications
DC-DC Converters
Power Management Functions
Battery Operated Systems and Solid-State Relays
Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories, Transistors, etc.
Mechanical Data
Case: SOT23
Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Solderable per MIL-STD-202, Method 208
e3
Lead Free Plating (Matte Tin Finish Annealed over Alloy 42
Leadframe).
Terminal Connections: See Diagram
Weight: 0.008 grams (Approximate)
D
D
G
ESD HBM >6kV
G
S
Gate Protection
Diode
Top View
Top View
Pin Configuration
S
Equivalent Circuit
Ordering Information
(Note 4)
Part Number
DMG301NU-7
DMG301NU-13
Notes:
Compliance
Standard
Standard
Case
SOT23
SOT23
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
N5K = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test Site)
YM = Date Code Marking for CAT (Chengdu Assembly/ Test Site)
Y or Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2011
Y
Jan
1
Feb
2
2012
Z
Mar
3
Apr
4
2013
A
May
5
Jun
6
2014
B
Jul
7
2015
C
Aug
8
Sep
9
2016
D
Oct
O
Nov
N
2017
E
Dec
D
DMG301NU
Document number: DS36226 Rev. 3 - 2
1 of 6
www.diodes.com
September 2014
© Diodes Incorporated
DMG301NU
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 6) V
GS
= 4.5V
Continuous Drain Current (Note 6) V
GS
= 2.7V
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
Maximum Body Diode Continuous Current (Note 6)
Steady
State
Steady
State
T
A
= +25°C
T
A
= +70°C
T
A
= +25°C
T
A
= +70°C
Symbol
V
DSS
V
GSS
I
D
I
D
I
DM
I
S
Value
25
8
0.26
0.21
0.23
0.18
1.5
0.5
Units
V
V
A
A
A
A
Thermal Characteristics
Characteristic
Total Power Dissipation
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Operating and Storage Temperature Range
(Note 5)
(Note 6)
(Note 5)
(Note 6)
(Note 6)
Symbol
P
D
R
θJA
R
θJC
T
J,
T
STG
Value
0.32
0.4
369
296
115
-55 to +150
°C
Units
W
°C/W
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
(@T
A
= +25°C, unless otherwise specified.)
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(ON)
g
FS
V
SD
C
iss
C
oss
C
rss
R
G
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
Min
25
0.7
Typ
1
0.76
27.9
6.1
2.0
26.4
0.36
0.06
0.04
2.9
1.8
6.6
2.3
Max
1.0
100
1.1
4
5
1.2
42
9.2
3.0
nS
V
GS
= 4.5V, V
DS
= 6V
I
D
= 0.5A, R
G
= 50Ω
nC
V
GS
= 4.5V, V
DS
= 5V,
I
D
= 0.2A
Ω
pF
V
DS
= 10V, V
GS
= 0V,
f = 1.0MHz
V
DS
= 0V, V
GS
= 0V, f = 1MHz
Unit
V
µA
nA
V
Ω
Ω
S
V
Test Condition
V
GS
= 0V, I
D
= 250µA
V
DS
= 20V, V
GS
= 0V
V
GS
= 8V, V
DS
= 0V
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 4.5V, I
D
= 0.4A
V
GS
= 2.7V, I
D
= 0.2A
V
DS
= 5V, I
D
= 0.4A
V
GS
= 0V, I
S
= 0.29A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout
7 .Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
DMG301NU
Document number: DS36226 Rev. 3 - 2
2 of 6
www.diodes.com
September 2014
© Diodes Incorporated
DMG301NU
1.0
V
GS
= 8.0V
1
V
GS
= 4.0V
V
GS
= 3.0V
V
DS
= 5.0V
T
A
= 85°C
T
A
= 25°C
T
A
= 125°C
T
A
= -55°C
T
A
= 150°C
0.9
0.8
I
D
, DRAIN CURRENT (A)
V
GS
= 4.5V
V
GS
= 2.0V
0.9
0.8
I
D
, DRAIN CURRENT (A)
0.7
V
GS
= 2.7V
0.7
0.6
0.5
0.4
0.3
0.2
0.6
V
GS
= 2.5V
0.5
0.4
0.3
0.2
0.1
0.0
0
V
GS
= 1.2V
V
GS
= 1.5V
0.1
1
2
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
3
0
0
0.5
1
1.5
2
2.5
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
3
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
1.5
2
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
V
GS
= 4.5V
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0
0.2
0.4
0.6
0.8
I
D
, DRAIN CURRENT (A)
Figure 4 Typical On-Resistance vs.
Drain Current and Temperature
1
T
A
= 25°C
T
A
= 125°C
T
A
= 85°C
T
A
= 150°C
1.2
V
GS
= 2.7V
0.9
V
GS
= 4.5V
0.6
0.3
T
A
= -55°C
0
0
0.2
0.4
0.6
0.8
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
1
R
DS(ON)
, DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
1.6
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
1.8
1.5
1.2
1.4
V
GS
= 4.5V
I
D
= 500mA
V
GS
= 4.5V
I
D
= 500mA
1.2
0.9
1
0.6
0.8
0.6
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
C)
Figure 5 On-Resistance Variation with Temperature
0.3
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
C)
Figure 6 On-Resistance Variation with Temperature
DMG301NU
Document number: DS36226 Rev. 3 - 2
3 of 6
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September 2014
© Diodes Incorporated
DMG301NU
1.2
V
GS(th)
, GATE THRESHOLD VOLTAGE (V)
1
1.1
1
0.9
0.8
0.7
0.6
0.5
T
A
= -55°C
I
D
= 250µA
I
S
, SOURCE CURRENT (A)
0.8
T
A
= 150°C
T
A
= 125°C
I
D
= 1mA
0.6
0.4
T
A
= 85°C
0.2
T
A
= 25°C
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
C)
Figure 7 Gate Threshold Variation vs. Ambient Temperature
8
V
GS
GATE THRESHOLD VOLTAGE (V)
0.4
-50
0
0
0.3
0.6
0.9
1.2
1.5
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 8 Diode Forward Voltage vs. Current
100
C
T
, JUNCTION CAPACITANCE (pF)
6
V
DS
= 15V
I
D
= 200mA
C
iss
4
10
C
oss
2
C
rss
f = 1MHz
0
0
0.1
0.2
0.3
0.4
0.5
0.6
Q
g
, TOTAL GATE CHARGE (nC)
Figure 9 Gate Charge
0.7
1
0
5
10
15
20
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 10 Typical Junction Capacitance
25
1
R
DS(on)
Limited
DC
I
D
, DRAIN CURRENT (A)
0.1
P
W
= 10s
P
W
= 1s
P
W
= 100ms
P
W
= 10ms
P
W
= 1ms
P
W
= 100µs
0.01
T
J(max)
= 150°C
T
A
= 25°C
V
GS
= 4.5V
Single Pulse
DUT on 1 * MRP Board
0.001
0.1
1
10
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 11 SOA, Safe Operation Area
100
DMG301NU
Document number: DS36226 Rev. 3 - 2
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September 2014
© Diodes Incorporated
DMG301NU
D = 0.9
D = 0.7
D = 0.5
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
R
JA
(t) = r(t) * R
JA
R
JA
= 373°C/W
Duty Cycle, D = t1/ t2
0.0001
0.001
0.01
0.1
1
t1, PULSE DURATION TIME (sec)
Figure 12 Transient Thermal Resistance
10
100
1,000
D = Single Pulse
0.00001
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
SOT23
Dim
Min
Max
Typ
A
0.37
0.51
0.40
B
1.20
1.40
1.30
C
2.30
2.50
2.40
D
0.89
1.03 0.915
F
0.45
0.60 0.535
G
1.78
2.05
1.83
H
2.80
3.00
2.90
J
0.013 0.10
0.05
K
0.890 1.00 0.975
K1
0.903 1.10 1.025
L
0.45
0.61
0.55
L1
0.25
0.55
0.40
M
0.085 0.150 0.110
a
8°
All Dimensions in mm
H
J
All 7°
K1
K
a
A
M
L
L1
C
B
D
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
Y
Z
C
Dimensions Value (in mm)
Z
2.9
X
0.8
Y
0.9
2.0
C
1.35
E
X
E
DMG301NU
Document number: DS36226 Rev. 3 - 2
5 of 6
www.diodes.com
September 2014
© Diodes Incorporated
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