DMG3407SSN
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(ON)
50mΩ @ V
GS
= -10V
I
D
T
A
= 25°C
-4.0A
-3.3A
Features and Benefits
•
•
•
•
•
•
•
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Lead-Free Finish; RoHS compliant (Note 1)
Halogen and Antimony Free. “Green” Device (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
ADVANCE INFORMATION
-30V
72mΩ @ V
GS
= -4.5V
Description and Applications
This new generation MOSFET has been designed to minimize the on-
state resistance (R
DS(on)
) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
•
•
•
Load Switch
DC-DC Converters
Power management functions
Mechanical Data
•
•
•
•
•
•
Case: SC59
Case Material – Molded Plastic. UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin Solderable per MIL-STD-202,
Method 208
Terminal Connections: See Diagram
Weight: 0.014 grams (approximate)
Drain
SC59
D
Gate
Source
G
S
Top View
Internal Schematic
Pin Configuration
Ordering Information
(Note 3)
Part Number
DMG3407SSN-7
Notes:
Case
SC59
Packaging
3000 / Tape & Reel
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free
2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
G32
G32 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: X = 2010)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2010
X
Jan
1
Feb
2
2011
Y
Mar
3
Apr
4
2012
Z
May
5
Jun
6
YM
2013
A
Jul
7
2014
B
Aug
8
Sep
9
2015
C
Oct
O
Nov
N
2016
D
Dec
D
DMG3407SSN
Document number: DS35135 Rev. 5 - 2
1 of 6
www.diodes.com
April 2012
© Diodes Incorporated
DMG3407SSN
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Steady
State
t<10s
Steady
State
t<10s
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
Maximum Body Diode Forward Current (Note 5)
T
A
= 25°C
T
A
= 70°C
T
A
= 25°C
T
A
= 70°C
T
A
= 25°C
T
A
= 70°C
T
A
= 25°C
T
A
= 70°C
Symbol
V
DSS
V
GSS
I
D
I
D
I
D
I
D
I
DM
I
S
Value
-30
±20
-4.0
-3.2
-4.6
-3.6
-3.3
-2.6
-3.9
-3.1
-30
-2.0
Units
V
V
A
A
A
A
A
A
ADVANCE INFORMATION
Continuous Drain Current (Note 5) V
GS
= -10V
Continuous Drain Current (Note 5) V
GS
= -4.5V
Thermal Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic
Total Power Dissipation (Note 4)
Thermal Resistance, Junction to Ambient (Note 4)
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Case (Note 5)
Operating and Storage Temperature Range
T
A
= 25°C
T
A
= 70°C
Steady state
t<10s
T
A
= 25°C
T
A
= 70°C
Steady state
t<10s
Symbol
P
D
R
θ
JA
P
D
R
θ
JA
R
θ
JC
T
J,
T
STG
Value
1.1
0.7
166
118
1.8
1.1
98
71
18
-55 to +150
Units
W
°C/W
W
°C/W
°C
Electrical Characteristics
@ T
A
= 25°C unless otherwise stated
Characteristic
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current T
J
= 25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
Notes:
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS (ON)
|Y
fs
|
V
SD
C
iss
C
oss
C
rss
R
g
Q
g
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Min
-30
-
-
-1.0
-
-
-
-
466
80
47
2
10.6
5.2
1.3
1.1
-
-
-
-
6.8
5.5
Typ
-
-
-
-1.5
39
56
8.2
-0.75
582
114
76
5
13.3
6.5
1.7
1.9
6.0
12.9
35.4
30.7
8.5
7.0
Max
-
-1
±100
-2.1
50
72
-
-1.1
700
148
105
8
16
8.5
2
2.7
-
-
-
-
10.2
8.5
Unit
V
μA
nA
V
mΩ
S
V
Test Condition
V
GS
= 0V, I
D
= -250μA
V
DS
= -30V, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
V
DS
= V
GS
, I
D
= -250μA
V
GS
= -10V, I
D
= -4.1A
V
GS
= -4.5V, I
D
= -3.0A
V
DS
= -5V, I
D
= -4A
V
GS
= 0V, I
S
= -1A
V
DS
= -15V, V
GS
= 0V,
f = 1.0MHz
V
DS
= 0V, V
GS
= 0V, f = 1MHz
V
GS
= -10V, V
DS
= -15V, I
D
= -4A
V
GS
= -4.5V, V
DS
= -15V,I
D
= -4A
pF
Ω
nC
ns
V
GS
= -10V, V
DS
= -15V,
R
L
= 3.6Ω, R
G
= 3Ω
ns
nC
I
F
= 4A, di/dt = 100A/μs
4. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided. The power dissipation P
D
is based on t<10s R
θJA
5. Device mounted on 1” x 1” FR-4 PCB with high coverage 2 oz. Copper, single sided. The power dissipation P
D
is based on t<10s R
θJA
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to production testing.
DMG3407SSN
Document number: DS35135 Rev. 5 - 2
2 of 6
www.diodes.com
April 2012
© Diodes Incorporated
DMG3407SSN
20
V
GS
= -4.5V
V
GS
= -4.0V
10
V
DS
= -5.0V
16
-I
D
, DRAIN CURRENT (A)
8
V
GS
= -3.5V
12
-I
D
, DRAIN CURRENT (A)
6
ADVANCE INFORMATION
8
V
GS
= -3.0V
4
4
V
GS
= -2.5V
V
GS
= -2.0V
2
T
A
= 150
°
C
T
A
= 125
°
C
T
A
= 85
°
C
T
A
= 25
°
C
T
A
= -55
°
C
0
0
1
0
5
2
3
4
-V
DS
, DRAIN -SOURCE VOLTAGE(V)
Fig. 1 Typical Output Characteristics
-V
GS
, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE(
Ω
)
R
DS(ON)
,DRAIN-SOURCE ON-RESISTANCE(
Ω
)
0.12
V
GS
= -4.5V
T
A
= 150
°
C
T
A
= 125
°
C
T
A
= 85
°
C
0.10
0.08
0.06
T
A
= 25
°
C
0.04
T
A
= -55
°
C
0.02
0
0
2
4
6
8
-I
D
, DRAIN SOURCE CURRENT
Fig. 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
10
0
2
4
6
8
-I
D
, DRAIN SOURCE CURRENT (A)
Fig. 4 Typical On-Resistance vs.
Drain Current and Temperature
10
R
DS(ON)
, DRAIN-SOURCE
ON-RESISTANCE (Normalized)
1.5
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
Ω
)
1.7
0.12
0.10
V
GS
= -4.5V
I
D
= -5A
1.3
0.08
1.1
0.06
0.9
0.04
V
GS
= -10V
I
D
= -10A
0.7
0.5
-50
0.02
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
°
C)
Fig. 5 On-Resistance Variation with Temperature
0
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
°
C)
Fig. 6 On-Resistance Variation with Temperature
DMG3407SSN
Document number: DS35135 Rev. 5 - 2
3 of 6
www.diodes.com
April 2012
© Diodes Incorporated
DMG3407SSN
2.5
-V
GS(TH)
, GATE THRESHOLD VOLTAGE(V)
10
2.0
8
-I
S
, SOURCE CURRENT (A)
ADVANCE INFORMATION
1.5
6
1.0
4
0.5
2
0
-50
0
25
50
75 100 125 150
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
-25
0
0.2
0.4
0.6
0.8
1.0
-V
SD
, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
1.2
1,000
C
iss
10,000
C
T
, JUNCTION CAPACITANCE (pF)
-I
DSS
, LEAKAGE CURRENT (nA)
1,000
T
A
= 150°C
100
T
A
= 125°C
C
oss
100
C
rss
T
A
= 85°C
10
1
T
A
= 25°C
f = 1MHz
10
0
5
10
15
20
25
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Junction Capacitance
30
6
10
14
18
22
26
30
-V
DS
, DRAIN-SOURCE VOLTAGE(V)
Fig. 10 Typical Drain-Source Leakage Current vs. Voltage
0.1
2
10
400
P
(pk)
, PEAK TRANSIENT POWER (W)
350
300
250
200
150
100
50
0
0.00001
0.001
0.1
10
1,000
t1, Pulse Duration Time (sec)
Fig. 12 Single Pulse Maximum Power Dissipation
Single Pulse
R
θJA
= 164
°
C/W
R
θ
JA(t)
= R
θ
JA
* r
(t)
T
J
-T
A
= P * R
θJA(t)
-V
GS
, GATE-SOURCE VOLTAGE (V)
8
6
4
2
0
0
4
8
12
Q
g
, TOTAL GATE CHARGE (nC)
Fig. 11 Gate-Charge Characteristics
16
DMG3407SSN
Document number: DS35135 Rev. 5 - 2
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April 2012
© Diodes Incorporated
DMG3407SSN
1
r(t), TRANSIENT THERMAL RESISTANCE
D = 0.7
D = 0.5
D = 0.3
D = 0.9
0.1
D = 0.1
D = 0.05
ADVANCE INFORMATION
D = 0.02
0.01
D = 0.01
D = 0.005
R
θ
JA
(t) = r(t) * R
θ
JA
R
θJA
= 164°C/W
Duty Cycle, D = t1/ t2
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t1, PULSE DURATION TIMES (sec)
Fig. 13 Transient Thermal Resistance
10
100
1,000
Package Outline Dimensions
A
B C
G
H
K
M
N
J
D
L
SC59
Dim
Min
Max
Typ
A
0.35
0.50
0.38
B
1.50
1.70
1.60
C
2.70
3.00
2.80
D
-
-
0.95
G
-
-
1.90
H
2.90
3.10
3.00
J
0.013 0.10
0.05
K
1.00
1.30
1.10
L
0.35
0.55
0.40
M
0.10
0.20
0.15
N
0.70
0.80
0.75
0°
8°
-
α
All Dimensions in mm
Suggested Pad Layout
Y
Z
C
Dimensions Value (in mm)
Z
3.4
X
0.8
Y
1.0
C
2.4
E
1.35
X
E
DMG3407SSN
Document number: DS35135 Rev. 5 - 2
5 of 6
www.diodes.com
April 2012
© Diodes Incorporated
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