DMG5802LFX
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
24V
R
DS(ON)
15mΩ @ V
GS
= 4.5V
20mΩ @ V
GS
= 2.5V
I
D
T
A
= +25°C
6.5A
5.6A
Features
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
ESD Protected up to 3kV
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (R
DS(on)
) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Mechanical Data
Case: W-DFN5020-6
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram Below
Weight: 0.03 grams (approximate)
G1 S1 S1
Applications
DC-DC Converters
Power management functions
W-DFN5020-6
D1/D2
D1
D2
G1
G2
G2 S2 S2
S1
S2
ESD PROTECTED TO 3kV
Top View
Bottom View
Top View
Pin-Out
Equivalent Circuit
Ordering Information
(Note 4)
Part Number
DMG5802LFX-7
Notes:
Case
W-DFN5020-6
Packaging
3000 / Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
YM
Date Code Key
Year
Code
Month
Code
ME = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: X = 2010)
M = Month (ex: 9 = September)
ME
2010
X
Jan
1
Feb
2
2011
Y
Mar
3
2012
Z
Apr
4
2013
A
May
5
Jun
6
2014
B
Jul
7
2015
C
Aug
8
2016
D
Sep
9
Oct
O
2017
E
Nov
N
2018
F
Dec
D
DMG5802LFX
Document number: DS35009 Rev. 5 - 2
1 of 6
www.diodes.com
November 2013
© Diodes Incorporated
DMG5802LFX
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 5) V
GS
= 4.5V
Continuous Drain Current (Note 5) V
GS
= 2.5V
Pulsed Drain Current (Note 6)
Steady
State
Steady
State
T
A
= +25°C
T
A
= +70°C
T
A
= +25°C
T
A
= +70°C
Symbol
V
DSS
V
GSS
I
D
I
D
I
DM
Value
24
±12
6.5
5.2
5.6
4.5
70
Unit
V
V
A
A
A
Thermal Characteristics
Characteristic
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient @T
A
= +25°C (Note 5)
Operating and Storage Temperature Range
Symbol
P
D
R
θJA
T
J
,
T
STG
Max
0.98
126.5
-55 to +150
Unit
W
°C/W
°C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current T
J
= +25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge V
GS
= 4.5V
Total Gate Charge V
GS
= 10V
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS (ON)
|Y
fs
|
V
SD
C
iss
C
oss
C
rss
R
g
Q
g
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
Min
24
—
—
0.6
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
0.9
11
12
13
14
17
0.6
1066.4
132.0
127.1
1.47
14.5
31.3
2.0
3.1
3.69
13.43
32.18
22.45
Max
—
1.0
±10
1.5
15
17
18
20
—
0.9
—
—
—
—
—
—
—
—
—
—
—
—
Unit
V
μA
μA
V
mΩ
S
V
Test Condition
V
GS
= 0V, I
D
= 250μA
V
DS
= 24V, V
GS
= 0V
V
GS
= ±12V, V
DS
= 0V
V
DS
= V
GS
, I
D
= 250μA
V
GS
= 4.5V, I
D
= 6.5A
V
GS
= 4V, I
D
= 5.6A
V
GS
= 3.1V, I
D
= 5.6A
V
GS
= 2.5V, I
D
= 5.6A
V
DS
= 5V, I
D
= 6.5A
V
GS
= 0V, I
S
= 1A
V
DS
= 15V, V
GS
= 0V,
f = 1.0MHz
V
DS
= 0V, V
GS
= 0V, f = 1MHz
V
GS
= 4.5V, V
DS
= 15V, I
D
= 5.8A
V
GS
= 10V, V
DS
= 15V,
I
D
= 5.8A
V
GS
= 10V, V
DS
= 15V,
R
L
= 2.1Ω, R
G
= 3Ω
pF
Ω
nC
ns
ns
ns
ns
5. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided.
6. Repetitive rating, pulse width limited by junction temperature.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
DMG5802LFX
Document number: DS35009 Rev. 5 - 2
2 of 6
www.diodes.com
November 2013
© Diodes Incorporated
DMG5802LFX
20
V
GS
= 10V
V
GS
= 4.5V
20
V
DS
= 5V
16
I
D
, DRAIN CURRENT (A)
V
GS
= 4.0V
16
I
D
, DRAIN CURRENT (A)
V
GS
= 3.5V
12
V
GS
= 3.0V
V
GS
= 2.5V
V
GS
= 2.0V
12
8
8
V
GS
= 1.5V
T
A
= 150°C
T
A
= 125°C
T
A
= 85°C
4
4
T
A
= 25°C
T
A
= -55°C
0
0
0.5
1.0
1.5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristic
2.0
0
0
0.5
1.0
1.5
2.0
2.5
V
GS
, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristic
3.0
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
0.05
0.04
V
GS
= 4.5V
0.04
0.03
T
A
= 150°C
0.03
V
GS
= 1.8V
V
GS
= 2.5V
V
GS
= 4.5V
0.02
T
A
= 125°C
T
A
= 85°C
T
A
= 25°C
0.02
0.01
0.01
T
A
= -55°C
0
0
4
8
12
16
I
D
, DRAIN-SOURCE CURRENT (A)
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
20
0
0
5
10
15
I
D
, DRAIN CURRENT (A)
Fig. 4 Typical On-Resistance
vs. Drain Current and Temperature
20
1.6
R
DSON
, DRAIN-SOURCE ON-RESISTANCE
0.04
R
DSON
, DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
1.4
V
GS
= 10V
I
D
= 20A
0.03
1.2
V
GS
= 4.5V
I
D
= 10A
0.02
V
GS
= 10V
I
D
= 20A
1.0
0.01
V
GS
= 4.5V
I
D
= 10A
0.8
0.6
-50
-25
0
25
50
75 100 125 150
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 5 On-Resistance Variation with Temperature
0
-50
-25
0
25
50
75 100 125 150
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 6 On-Resistance Variation with Temperature
DMG5802LFX
Document number: DS35009 Rev. 5 - 2
3 of 6
www.diodes.com
November 2013
© Diodes Incorporated
DMG5802LFX
1.4
V
GS(TH)
, GATE THRESHOLD VOLTAGE (V)
1.2
16
20
1.0
0.8
0.6
0.4
0.2
0
-50 -25
0
25
50
75 100 125 150
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
I
D
= 250µA
I
S
, SOURCE CURRENT (A)
12
I
D
= 1mA
T
A
= 25°C
8
4
0
0
0.2
0.4
0.6
0.8
1.0
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
1.2
10,000
f = 1MHz
100,000
I
DSS
, LEAKAGE CURRENT (nA)
10,000
T
A
= 150°C
C, CAPACITANCE (pF)
1,000
C
iss
1,000
T
A
= 125°C
C
oss
100
C
rss
100
T
A
= 85°C
10
T
A
= 25°C
10
0
4
8
12
16
20
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Total Capacitance
24
1
0
4
8
12
16
20
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 10 Typical Leakage Current
vs. Drain-Source Voltage
24
10
V
GS
, GATE-SOURCE VOLTAGE (V)
V
DS
= 15V
I
D
= 7A
100
R
DS(on)
Limited
8
6
-I
D
, DRAIN CURRENT (A)
10
1
DC
P
W
= 10s
P
W
= 1s
P
W
= 100ms
P
W
= 10ms
4
0.1
2
0
0
5
10
15
20
25
30
35
Q
g
, TOTAL GATE CHARGE (nC)
Fig. 11 Gate-Charge Characteristics
40
0.01
0.1
W
T
J(max)
= 150°C
P
W
= 100µs
T
A
= 25°C
V
GS
= 4.5V
Single Pulse
DUT on 1 * MRP Board
P
= 1ms
1
10
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 12 SOA, Safe Operation Area
100
DMG5802LFX
Document number: DS35009 Rev. 5 - 2
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November 2013
© Diodes Incorporated
DMG5802LFX
1
r(t), TRANSIENT THERMAL RESISTANCE
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.9
R
JA
(t) = r(t) * R
JA
R
JA
= 122°C/W
P(pk)
D = 0.02
0.01
D = 0.01
D = 0.005
t
1
t
2
T
J
- T
A
= P * R
JA
(t)
Duty Cycle, D = t
1
/t
2
D = Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t
1
, PULSE DURATION TIME (s)
Fig. 13 Transient Thermal Response
10
100
1,000
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
A
A1
e
D
A3
D2
Pin 1 ID
E
E2
L
Z
b
W-DFN5020-6
Dim
Min
Max
Typ
A
0.75 0.85 0.80
A1
0
0.05 0.02
A3
0.15
b
0.20 0.30 0.25
D
1.90 2.10 2.00
D2
1.40 1.60 1.50
e
0.50
E
4.90 5.10 5.00
E2
2.80 3.00 2.90
L
0.35 0.65 0.50
Z
0.375
All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
Y
X
X1
X2
C
Y2
Y3
G
Dimensions Value (in mm)
C
0.50
G
0.35
X
0.35
X1
0.90
X2
1.80
Y
0.70
Y2
1.60
Y3
3.20
DMG5802LFX
Document number: DS35009 Rev. 5 - 2
5 of 6
www.diodes.com
November 2013
© Diodes Incorporated
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