IQ80xL series
TECHNICAL DATA
Si Photodiode, with integrated TI amplifier
Features
•
•
•
•
•
•
•
•
•
•
•
Si-photodiode with integrated low noise
JFET TI amplifier
integrated feedback resistor and capacitor
decadic staggered responsivity
spectral range VIS and NIR
very low offset- and drift parameters
high dynamic range
dual power supply
hermetically sealed TO-5 package
assembly isolated to ground
collimator lens
components are in conformity with ROHS
and WEEE
Applications
•
•
•
•
common light-/radiation measuring
applications
detector for measuring of low radiation
intensities with high signal to noise
level
spectroscopy
medical diagnostics
Absolute Maximum Ratings
Item
Operation Voltage
Operating Temperature
Storage Temperature
Soldering Temperature *
Symbol
U
op
T
op
T
st
T
sol
Value
±18
-25 … +85
-40 … +100
260
Unit
V
°C
°C
°C
* must be completed within 3 seconds
Characteristics (25°C)
Item
Active Area
Feedback Resistor
Dark Offset Voltage
Noise Voltage
Spectral Range
Peak Sensitivity
Wavlength
Responsitiy at
λ
P
Rise time
Frequency Range
Opening Angle
Saturation Voltage
Short Current
Operation Voltage
Current Consumption
02.08.2010
Symbol
A
R
U
offset
U
N
λ
λ
p
S
t
r
Δf
Test Conditions
E = 0 lx
B = 20 kHz
S = 0,1*S
max
S = S
max
-3 dB
S(φ)=0,5* S
max
*cos(φ)
R
L
= 2 kΩ
IQ802L
IQ801L IQ800L
4,8
1
10
100
±0.5
±0.5
±2
0.2
0.3
0.5
400 … 1100
850
0.6
3
120
6
15
25
±50
-14,8 (-14,5)
±45
±5 … ±15
2.2 (2.6)
60
35
10
Unit
mm²
MΩ
mV
mV
rms
nm
nm
mV/nW
µs
kHz
deg.
V
mA
V
mA
1 of 2
U
op
IQ80xL
京公网安备 11010802033920号
EEWORLD
