Gre
r
Pro
STT3414
Ver 1.0
S a mHop Microelectronics C orp.
N-Channel Logic Level Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V
DSS
I
D
R
DS(ON)
(m
Ω
) Max
33
@
VGS=10V
30V
7A
42
@
VGS=4.5V
57
@
VGS=2.5V
FEATURES
Super high dense cell design for low R
DS(ON)
.
Rugged and reliable.
Surface Mount Package.
D
D
G
G
D
S
S
STT SERIES
SOT-223
ABSOLUTE MAXIMUM RATINGS (
T
A
=25
°
C unless otherwise noted
)
Symbol
V
DS
V
GS
I
D
I
DM
E
AS
P
D
T
J,
T
STG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
-Pulsed
b
d
a
Limit
30
±12
T
A
=25°C
T
A
=70°C
7
5.6
28
9
T
A
=25°C
T
A
=70°C
3
1.9
-55 to 150
Units
V
V
A
A
A
mJ
W
W
°C
Single Pulse Avalanche Energy
Maximum Power Dissipation
a
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R
JA
Thermal Resistance, Junction-to-Ambient
a
42
°C/W
Details are subject to change without notice.
Aug,23,2011
1
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STT3414
Ver 1.0
ELECTRICAL CHARACTERISTICS
(
T
A
=25
°
C unless otherwise noted
)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
Drain-Source Breakdown Voltage
I
DSS
I
GSS
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
V
GS
=0V , I
D
=250uA
V
DS
=24V , V
GS
=0V
30
1
±100
V
uA
nA
V
GS
= ±12V , V
DS
=0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(th)
R
DS(ON)
g
FS
Drain-Source On-State Resistance
Forward Transconductance
c
V
DS
=V
GS
, I
D
=250uA
V
GS
=10V , I
D
=3.5A
V
GS
=4.5V , I
D
=3.1A
V
GS
=2.5V , I
D
=2.6A
V
DS
=5V , I
D
=3.5A
0.5
0.9
26
31
42
16
1.5
33
42
57
V
m ohm
m ohm
m ohm
S
pF
pF
pF
DYNAMIC CHARACTERISTICS
Input Capacitance
C
ISS
Output Capacitance
C
OSS
Reverse Transfer Capacitance
C
RSS
SWITCHING CHARACTERISTICS
t
D(ON)
Turn-On Delay Time
tr
Rise Time
t
D(OFF)
tf
Q
g
Q
gs
Q
gd
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
c
V
DS
=15V,V
GS
=0V
f=1.0MHz
390
69
56
V
DD
=15V
I
D
=1A
V
GS
=10V
R
GEN
= 6 ohm
V
DS
=15V,I
D
=3.5A,V
GS
=10V
V
DS
=15V,I
D
=3.5A,V
GS
=4.5V
V
DS
=15V,I
D
=3.5A,
V
GS
=10V
6.6
11
18
16
9.8
5
0.7
2
ns
ns
ns
ns
nC
nC
nC
nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Diode Forward Voltage
V
SD
V
GS
=0V,I
S
=1A
0.77
1.2
V
Notes
_
a.Surface Mounted on FR4 Board,t < 10sec.
_
_
b.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
d.Starting T
J
=25
°
C,L=0.5mH,V
DD
= 20V.(See Figure13)
Aug,23,2011
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STT3414
Ver 1.0
15
V
G S
=10V
10
I
D
, Drain Current(A)
V
G S
=4.5V
V
G S
=3V
I
D
, Drain Current(A)
12
8
Tj=125 C
6
9
V
G S
=2.5V
V
G S
=2V
6
4
-55 C
25 C
2
3
0
0
0.5
1.0
1.5
2.0
2.5
3.0
0
0
0.5
1
1.5
2
2.5
3
V
DS
, Drain-to-Source Voltage(V)
V
GS
, Gate-to-Source Voltage(V)
Figure 1. Output Characteristics
60
Figure 2. Transfer Characteristics
2.0
V
G S
=2.5V
R
DS(on)
, On-Resistance
Normalized
50
40
1.8
1.6
1.4
1.2
1.0
0
V
G S
=2.5V
I
D
=2.6A
V
G S
=10V
I
D
=3.5A
V
G S
=4.5V
I
D
=3.1A
R
DS(on)
(m
Ω
)
V
G S
=4.5V
30
20
10
1
V
G S
=10V
1
3
6
9
12
15
0
25
50
75
100
125
I
D
, Drain Current(A)
150
T j (
°C )
Tj, Junction Temperature(° C )
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
Figure 4. On-Resistance Variation with Drain
Current and Temperature
BVDSS, Normalized
Drain-Source Breakdown Voltage
Vth, Normalized
Gate-Source Threshold Voltage
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-50
-25
0
25
50
75 100 125 150
V
DS
=V
G S
I
D
=250uA
1.15
I
D
=250uA
1.10
1.05
1.00
0.95
0.90
0.85
-50
-25
0
25
50
75 100 125 150
Tj, Junction Temperature(° C )
Tj, Junction Temperature(° C )
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Breakdown Voltage Variation
with Temperature
Aug,23,2011
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STT3414
Ver 1.0
120
100
80
20.0
Is, Source-drain current(A)
I
D
=3.5A
10.0
125 C
5.0
25 C
75 C
R
DS(on)
(m
Ω
)
60
125 C
40
20
0
75 C
25 C
1.0
0
2
4
6
8
10
0
0.3
0.6
0.9
1.2
1.5
V
GS
, Gate-to-Source Voltage(V)
V
SD
, Body Diode Forward Voltage(V)
Figure 7. On-Resistance vs.
Gate-Source Voltage
600
Figure 8. Body Diode Forward Voltage
Variation with Source Current
10
8
6
4
2
0
V
DS
=15V
I
D
=3.5A
500
400
300
200
Ciss
Coss
100
Crss
0
0
5
10
15
20
25
30
V
GS
, Gate to Source Voltage(V)
C, Capacitance(pF)
0
2
4
6
8
10
12
14
16
V
DS
, Drain-to-Source Voltage(V)
Qg, Total Gate Charge(nC)
Figure 9. Capacitance
Figure 10. Gate Charge
100
100
it
10
ms
I
D
, Drain Current(A)
Switching Time(ns)
TD(off )
Tf
10
R
DS
(O
L
N)
im
10
Tr
TD(on)
10
1s
10
s
DC
0m
s
1
1
VDS=15V,ID=1A
VGS=10V
0.1
1
10
100
0.1
V
GS
=10V
Single Pulse
T
A
=25 C
1
10
100
0.1
Rg, Gate Resistance(
Ω
)
V
DS
, Drain-Source Voltage(V)
Figure 11. switching characteristics
Figure 12. Maximum Safe Operating Area
Aug,23,2011
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STT3414
Ver 1.0
V
( BR )D S S
tp
L
V
DS
RG
20V
D .U .T
I
A S
tp
+
-
V
DD
0.0 1
I
AS
Unclamped Inductive Waveforms
F igure 13b.
Unclamped Inductive Test Circuit
F igure 13a.
1
0.5
Normalized Transient
Thermal Resistance
0.2
0.1
0.1
0.05
0.02
P
DM
t
1
t
2
0.01
0.01
Single Pulse
1. R
thJA
(t)=r (t) * R
th JA
2. R
thJA
=See Datasheet
3. T
JM-
T
A
= P
DM
* R
thJA
(t)
4. Duty Cycle, D=t
1
/t
2
0.001
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration(sec)
10
100
1000
Figure 14. Normalized Thermal Transient Impedance Curve
Aug,23,2011
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