Infrared LED - Module
Radiation
Type
Technology
ELJ-810-228B
Case
Infrared
Description
20 degrees
AlGaAs/AlGaAs
plastic lens, metal case
Outline:
H=13 mm (± 0,5)
13
M10
R
6,
4
High-power infrared-LED module, double-hetero AlGaAs
structure, six chips are soldered on metal header, fast
switching time
Applications
Illumination for CCD-cameras, remote control and
optical communications, traffic signals,
measurement systems
Absolute Maximum Ratings
at T
amb
= 25°C, unless otherwise specified
Parameter
DC forward current
Peak forward current
Reverse voltage*
Power dissipation
Operating temperature range
Storage temperature range
Junction temperature
*Always protect the LED source against reverse currents
Test conditions
on heat sink
t
p
≤10
µs, f≤500 Hz
I
R
= 10 µA
on heat sink (S
≥
50 cm²)
Symbol
I
F
I
FM
V
R
P
T
amb
T
stg
T
j
14
R
8
11
4
Value
250
2000
20
3
-60 to +85
-60 to +85
100
Unit
mA
mA
V
W
°C
°C
°C
Optical and Electrical Characteristics
at T
amb
= 25°C, unless otherwise specified
Parameter
Forward voltage
Forward voltage
Radiant power
Radiant intensity
Peak wavelength
Spectral bandwidth at 50%
Viewing angle
Switching time
Thermal resistance junction-case
Test conditions
I
F
= 100 mA
I
F
= 250 mA
I
F
= 250 mA
I
F
= 250 mA
I
F
= 250 mA
I
F
= 250 mA
I
F
= 250 mA
I
F
= 250 mA
Symbol
V
F
V
F
Φ
e
I
e
λ
p
∆λ
0,5
ϕ
t
r
, t
f
R
thJC
ROITHNER LASERTECHNIK
Schönbrunner Straße 7, A-1040 Vienna, Austria, Tel: +43-1-586 52 43-0, Fax: +43-1-586 52 43-44, office@roithner-laser.com
Min
Typ Max
10.5
13
225
1.2
Unit
V
V
mW
W/sr
790
810
30
20
150
10
830
nm
nm
deg
ns
K/W
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