PNP SILICON PLANAR MEDIUM POWER
HIGH GAIN TRANSISTOR
ISSUE 1 - JANUARY 1997
FEATURES
* V
CEO
= -25V
* 4 Amp Continuous Current
* 10 Amp Pulse Current
* Low Saturation voltage
* High Gain
FZT1149A
C
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
Power Dissipation at T
amb
=25°C †
Operating and Storage Temperature
Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
B
P
tot
T
j
:T
stg
VALUE
-30
-25
-5
-10
-4
-500
2.5
-55 to +150
SOT223
UNIT
V
V
V
A
A
mA
W
°C
† The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 2 inches x 2 inches
FZT1149A
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C ).
VALUE
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
SYMBOL
MIN.
V
(BR)CBO
V
CES
V
CEO
V
CEV
-30
-25
-25
-25
-5
TYP.
-70
-60
-60
-60
-8.5
-0.3
-0.3
-0.3
-45
-100
-140
-170
-230
-960
-860
270
250
195
115
450
400
320
190
50
135
50
150
270
-100
-100
-100
-80
-170
-240
-260
-350
-1050
-1000
MAX.
UNIT
V
V
V
V
V
nA
nA
nA
mV
mV
mV
mV
mV
mV
mV
CONDITIONS.
I
C
=-100µA
I
C
=-100µA
I
C
=-10mA *
I
C
=-100µA, V
EB
=+1V
I
E
=-100µA
V
CB
=-24V
V
EB
=-4V
V
CE
=-20V
I
C
=-0.1A, I
B
=-1.0mA*
I
C
=-0.5A, I
B
=-3mA*
I
C
=-1A, I
B
=-7mA*
I
C
=-2A, I
B
=-30mA*
I
C
=-4A, I
B
=-140mA*
I
C
=-4A, I
B
=-140mA*
I
C
=-4A, V
CE
=-2V*
I
C
=-10mA, V
CE
=-2V*
I
C
=-0.5A, V
CE
=-2V*
I
C
=-2A, V
CE
=-2V*
I
C
=-5A, V
CE
=-2V*
I
C
=-10A, V
CE
=-2V*
Emitter-Base Breakdown V
(BR)EBO
Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector Emitter Cut-Off
Current
Collector-Emitter
Saturation Voltage
I
CBO
I
EBO
I
CES
V
CE(sat)
Base-Emitter
Saturation Voltage
Base-Emitter Turn-On
Voltage
Static Forward Current
Transfer Ratio
V
BE(sat)
V
BE(on)
h
FE
800
Transition Frequency
Output Capacitance
Switching Times
f
T
C
cb
t
on
t
off
MHz
pF
ns
ns
I
C
=-50mA, V
CE
=-10V
f=50MHz
VCB=- 10V, f= 1MHz
I
C
=-4A, I
B
=-40mA,
V
CC
=-10V
I
C
=-4A, I
B
=±40mA,
V
CC
=-10V
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle
≤
2%.
FZT1149A
THERMAL CHARACTERISTICS
4
Thermal Resistance (°C/W)
50
40
D=1
t1
D=t1
tP
tP
Max Power Dissipation - (Watts)
3
30
20
10
0
100µs
D=0.5
D=0.2
D=0.1
D=0.05
Single Pulse
2
1
0
0
20
40
60
80
100
120
140
160
1ms
10ms 100ms
1s
10s
100s
Pulse Width
T - Ambient Temperature (°C)
Transient Thermal Resistance
Derating curve
SPICE PARAMETERS
*ZETEX FZT1149A Spice model Last revision 10/1/97
*
.MODEL
FZT1149A PNP IS =9.5e-13 NF=1.002 ISE=1.2e-13 NE =1.4
+
BF =520 VAF=24.97 IKF=5 NR =0.997
+
ISC=4.5E-13 NC =1.25 BR = 40 VAR=2.51 IKR=0.7
+
RE =20e-3 RB =150e-3 RC =10e-3 CJE=490e-12
+
CJC=150e-12 VJC=1.094 MJC= 0.4739 TF =1e-9 TR = 3.5e-9
*
*
©
1995 ZETEX PLC
The copyright in this model and the design embodied belong to Zetex PLC (“Zetex”). It is supplied
free of charge by Zetex for the purpose of research and design and may be used or copied intact
(including this notice) for that purpose only. All other rights are reserved. The model is believed
accurate but no condition or warranty as to its merchantability or fitness for purpose is given and
no liability in respect of any use is accepted by Zetex PLC, its distributors or agents.
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