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ELC-770-25

Description
It is of double hetero structure in dual combination
File Size417KB,1 Pages
ManufacturerRoithner Lasertechnik GmbH
Websitehttp://www.roithner-laser.com/
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ELC-770-25 Overview

It is of double hetero structure in dual combination

ELC-770-25
v 1.0 12.06.2013
Description
ELC-770-25
is a GaAlAs based 325x325 µm bare LED chip die. It is of double hetero structure in
dual combination (DDH), and has a typical emission wavelength of 770 nm. It is delivered on
adhesive film with the wire bond side up
Characteristics
(I =20mA, T
F
AMB
=25°C)
Parameter
Emission Wavelength
Forward Voltage
Reverse Current (V
R
=5V)
Output Power
Spectral bandwidth (FWHM)
Rise/Fall time
Symbol
λ
peak
V
F
I
R
P
O
λ∆
t
R
/t
F
Min.
760
Values
Typ.
770
1.65
Max.
780
2.0
100
Unit
nm
V
µA
mW
nm
ns
2.0
2.7
16
40/30
Drawing & Dimensions
All dimensions in µm
© All Rights Reserved
The above specifications are for reference purpose only and subjected to change without prior notice
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