DISCRETE SEMICONDUCTORS
DATA SHEET
BLV20
VHF power transistor
Product specification
August 1986
Philips Semiconductors
Product specification
VHF power transistor
DESCRIPTION
N-P-N silicon planar epitaxial
transistor intended for use in class-A,
B and C operated h.f. and v.h.f.
transmitters with a nominal supply
voltage of 28 V. The transistor is
resistance stabilized and is
guaranteed to withstand severe load
mismatch conditions.
It has a 3/8" flange envelope with a
ceramic cap. All leads are isolated
from the flange.
PINNING - SOT123
PIN
1
2
3
4
DESCRIPTION
collector
emitter
base
emitter
2
3
MSB057
MBB012
BLV20
QUICK REFERENCE DATA
R.F. performance up to T
h
= 25
°C
in an unneutralized common-emitter
class-B circuit
MODE OF
OPERATION
c.w.
V
CE
V
28
f
MHz
175
P
L
W
8
G
p
dB
>
12
η
%
>
65
z
i
Ω
1,8
+
j0,7
Y
L
mS
18
−
j20
PIN CONFIGURATION
halfpage
1
4
c
handbook, halfpage
b
e
Fig.1 Simplified outline and symbol.
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of
which is toxic. The device is entirely safe provided that the BeO disc is
not damaged.
August 1986
2
Philips Semiconductors
Product specification
VHF power transistor
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Collector-emitter voltage (V
BE
= 0)
peak value
Collector-emitter voltage (open base)
Emitter-base voltage (open collector)
Collector current (average)
Collector current (peak value); f
>
1 MHz
R.F. power dissipation (f
>
1 MHz); T
mb
= 25
°C
Storage temperature
Operating junction temperature
v
CESM
V
CEO
V
EBO
I
C(AV)
I
CM
P
rf
T
stg
T
j
max.
max.
max.
max.
max.
max.
max.
BLV20
65 V
36 V
4 V
0,9 A
2,5 A
20 W
200
°C
−65
to
+
150
°C
MGP272
handbook, halfpage
1
handbook, halfpage
30
MGP273
Ptot
IC
(A)
20
Th = 70
°C
Tmb = 25
°C
(W)
ΙΙΙ
derate by 0.12 W/K
ΙΙ
0.5
10
0.1 W/K
Ι
0
10
0
20
30
VCE (V)
40
0
50
Th (°C)
100
I Continuous d.c. operation
II Continuous r.f. operation
III Short-time operation during mismatch
Fig.2 D.C. SOAR.
Fig.3 R.F. power dissipation; V
CE
≤
28 V; f
>
1 MHz.
THERMAL RESISTANCE
(dissipation = 8 W; T
mb
= 72,4
°C,
i.e. T
h
= 70
°C)
From junction to mounting base (d.c. dissipation)
From junction to mounting base (r.f. dissipation)
From mounting base to heatsink
R
th j−mb(dc)
R
th j−mb(rf)
R
th mb−h
=
=
=
10,7 K/W
8,6 K/W
0,3 K/W
August 1986
3
Philips Semiconductors
Product specification
VHF power transistor
CHARACTERISTICS
T
j
= 25
°C
Collector-emitter breakdown voltage
V
BE
= 0; I
C
= 2 mA
Collector-emitter breakdown voltage
open base; I
C
= 10 mA
Emitter-base breakdown voltage
open collector; I
E
= 1 mA
Collector cut-off current
V
BE
= 0; V
CE
= 36 V
Second breakdown energy; L = 25 mH; f = 50 Hz
open base
R
BE
= 10
Ω
D.C. current gain
(1)
I
C
= 0,4 A; V
CE
= 5 V
Collector-emitter saturation voltage
(1)
I
C
= 1,25 A; I
B
= 0,25 A
Transition frequency at f = 100 MHz
(1)
−I
E
= 0,4 A; V
CB
= 28 V
−I
E
= 1,25 A; V
CB
= 28 V
Collector capacitance at f = 1 MHz
I
E
= I
e
= 0; V
CB
= 28 V
Feedback capacitance at f = 1 MHz
I
C
= 50 mA; V
CE
= 28 V
Collector-flange capacitance
Note
1. Measured under pulse conditions: t
p
≤
200
µs; δ ≤
0,02.
C
re
C
cf
typ.
typ.
C
c
typ.
f
T
f
T
typ.
typ.
V
CEsat
typ.
h
FE
E
SBO
E
SBR
>
>
typ.
I
CES
<
V
(BR)EBO
>
4 V
V
(BR)CEO
>
V
(BR)CES
>
BLV20
65 V
36 V
1 mA
0,5 mJ
0,5 mJ
50
10 to 100
0,8 V
600 MHz
520 MHz
10 pF
7,1 pF
2 pF
August 1986
4
Philips Semiconductors
Product specification
VHF power transistor
BLV20
MGP274
MGP275
handbook, halfpage
100
handbook, halfpage
40
Cc
(pF)
hFE
VCE = 28 V
5V
30
50
20
typ
10
0
0
0.5
1
IC (A)
1.5
0
0
10
20
VCB (V)
30
Fig.4 Typical values; T
j
= 25
°C.
Fig.5 I
E
= I
e
= 0; f = 1 MHz; T
j
= 25
°C.
handbook, full pagewidth
1000
MGP276
fT
(MHz)
VCB = 28 V
500
20 V
0
0
0.5
1
−I
E (A)
1.5
Fig.6 Typical values; f = 100 MHz; T
j
= 25
°C.
August 1986
5
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