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SDF08N50

Description
Super high dense cell design for low RDS(ON).
File Size186KB,11 Pages
ManufacturerSAMHOP
Websitehttp://www.samhop.com.tw
Download Datasheet View All

SDF08N50 Overview

Super high dense cell design for low RDS(ON).

SDP08N50
SDF08N50
S a mHop Microelectronics C orp.
Ver 2.4
N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V
DSS
500V
I
D
8A
R
DS(ON)
(
Ω
) Typ
0.7
@
VGS=10V
FEATURES
Super high dense cell design for low R
DS(ON)
.
Rugged and reliable.
TO-220 and TO-220F Package.
D
G D S
G D S
G
SDP SERIES
TO-220
SDF SERIES
TO-220F
S
ORDERING INFORMATION
Ordering Code
Package
SDP08N50HZ
SDP08N50PZ
SDF08N50HZ
SDF08N50PZ
TO-220
TO-220
TO-220F
TO-220F
Marking Code
SDP08N50
08N50
SDF08N50
08N50
Delivery Mode
Tube
Tube
Tube
Tube
RoHS Status
Halogen Free
Pb Free
Halogen Free
Pb Free
ABSOLUTE MAXIMUM RATINGS (
T
C
=25
°
C unless otherwise noted
)
Symbol
V
DS
V
GS
I
D
I
DM
E
AS
P
D
T
J,
T
STG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
-Pulsed
a
c
a
SDP08N50 SDF08N50
500
±30
±30
T
C
=25°C
T
C
=100°C
8
5.7
24
225
T
C
=25°C
T
C
=100°C
75
37.5
25
12.5
8
5.7
24
Units
V
V
A
A
A
mJ
W
W
°C
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage
Temperature Range
-55 to 175
THERMAL CHARACTERISTICS
R
JC
Thermal Resistance, Junction-to-Case
R
JA
Thermal Resistance, Junction-to-Ambient
2
62.5
6
62.5
°C/W
°C/W
Details are subject to change without notice.
Dec,24,2013
1
www.samhop.com.tw
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