DXT3906
PNP SURFACE MOUNT TRANSISTOR
Features
NEW PRODUCT
•
•
•
•
•
•
Epitaxial Planar Die Construction
Complementary NPN Type Available (DXT3904)
Ideally Suited for Automated Assembly Processes
Ideal for Medium Power Switching or Amplification Applications
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
SOT89-3L
Mechanical Data
•
•
•
•
•
•
•
Case: SOT89-3L
Case Material: Molded Plastic, "Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish — Matte Tin annealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Marking & Type Code Information: See Page 4
Ordering Information: See Page 4
Weight: 0.072 grams (approximate)
3 E
C 4
2 C
1 B
TOP VIEW
COLLECTOR
2,4
1
BASE
3
EMITTER
Schematic and Pin Configuration
Maximum Ratings
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
@T
A
= 25°C unless otherwise specified
Symbol
V
CBO
V
CEO
V
EBO
I
C
Value
-40
-40
-5.0
-200
Unit
V
V
V
mA
Characteristic
Collector Current – Continuous
Thermal Characteristics
Characteristic
Power Dissipation (Note 3) @ T
A
= 25°C
Thermal Resistance, Junction to Ambient Air (Note 3) @ T
A
= 25°C
Operating and Storage Temperature Range
Notes:
1.
2.
3.
Symbol
P
D
R
θ
JA
T
j
, T
STG
Value
1
125
-55 to +150
Unit
W
°C/W
°C
No purposefully added lead.
Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Device mounted on FR-4 PCB; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can
be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
DS31140 Rev. 4 - 2
1 of 4
www.diodes.com
DXT3906
© Diodes Incorporated
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS (Note 4)
@T
A
= 25°C unless otherwise specified
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CEX
I
CBO
I
BL
Min
-40
-40
-5.0
⎯
⎯
⎯
60
80
100
60
30
⎯
-0.65
⎯
⎯
⎯
2.0
0.1
100
3.0
250
⎯
⎯
⎯
⎯
⎯
Max
⎯
⎯
⎯
-50
-50
-50
⎯
⎯
300
⎯
⎯
-0.25
-0.40
-0.85
-0.95
4.5
10
12
10
400
60
⎯
4.0
35
35
225
75
Unit
V
V
V
nA
nA
nA
Test Condition
I
C
= -10μA, I
E
= 0
I
C
= -1.0mA, I
B
= 0
I
E
= -10μA, I
C
= 0
V
CE
= -30V, V
EB(OFF)
= -3.0V
V
CB
= -30V, I
E
= 0
V
CE
= -30V, V
EB(OFF)
= -3.0V
I
C
= -100μA, V
CE
= -1.0V
I
C
= -1.0mA, V
CE
= -1.0V
I
C
= -10mA, V
CE
= -1.0V
I
C
= -50mA, V
CE
= -1.0V
I
C
= -100mA, V
CE
= -1.0V
I
C
= -10mA, I
B
= -1.0mA
I
C
= -50mA, I
B
= -5.0mA
I
C
= -10mA, I
B
= -1.0mA
I
C
= -50mA, I
B
= -5.0mA
V
CB
= -5.0V, f = 1.0MHz, I
E
= 0
V
EB
= -0.5V, f = 1.0MHz, I
C
= 0
V
CE
= -10V, I
C
= -1.0mA, f = 1.0kHz
NEW PRODUCT
DC Current Gain
h
FE
⎯
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small Signal Current Gain
Output Admittance
Current Gain-Bandwidth Product
Noise Figure
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
Notes:
4.
V
CE(SAT)
V
BE(SAT)
C
obo
C
ibo
h
ie
h
re
h
fe
h
oe
f
T
NF
t
d
t
r
t
s
t
f
V
V
pF
pF
kΩ
-4
x 10
⎯
μS
MHz
dB
ns
ns
ns
ns
V
CE
= -20V, I
C
= -10mA, f = 100MHz
V
CE
= -5.0V, I
C
= -100μA,
R
S
= 1.0kΩ, f = 1.0kHz
V
CC
= -3.0V, I
C
= -10mA,
V
BE(off)
= 0.5V, I
B1
= -1.0mA
V
CC
= -3.0V, I
C
= -10mA,
I
B1
= I
B2
= -1.0mA
Measured under pulsed condition. Pulse width = 300μs. Duty cycle
≤2%.
1.2
0.35
0.30
-I
C
, COLLECTOR CURRENT (A)
0.25
0.20
0.15
0.10
0.05
0.00
0
I
B
= -10mA
I
B
= -8mA
I
B
= -6mA
I
B
= -4mA
P
D
, POWER DISSIPATION (W)
1.0
0.8
0.6
I
B
= -2mA
0.4
0.2
25
50
75
100
125
150 175
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 1 Power Dissipation vs. Ambient Temperature (Note 3)
0
-V
CE
, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 2 Typical Collector Current vs.Collector-Emitter Voltage
DS31140 Rev. 4 - 2
2 of 4
www.diodes.com
DXT3906
© Diodes Incorporated
0.4
V
CE
= -1V
TA = 150°C
-V
CE(SAT)
, COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
I
C
/I
B
= 10
NEW PRODUCT
h
FE
, DC CURRENT GAIN
0.3
TA = 85°C
0.2
T A = 150°C
TA = 25°C
TA = -55°C
0.1
TA = 85°C
T A = 25°C
TA = -55°C
0
0.0001
-I
C
, COLLECTOR CURRENT (A)
Fig. 3 Typical DC Current Gain
vs. Collector Current
0.001
0.01
0.1
1
-I
C
, COLLECTOR CURRENT (A)
Fig. 4 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
V
CE
= -1V
-V
BE(SAT)
, BASE-EMITTER SATURATION VOLTAGE (V)
-V
BE(ON)
, BASE-EMITTER TURN-ON VOLTAGE (V)
I
C
/I
B
= 10
T A = -55°C
TA = 25°C
TA = 85°C
TA = 150°C
TA = -55°C
TA = 25°C
TA = 85°C
TA = 150°C
0.0001
-I
C
, COLLECTOR CURRENT (A)
Fig. 5 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
0.001
0.01
0.1
1
-I
C
, COLLECTOR CURRENT (A)
Fig. 6 Typical Base-Emitter Saturation Voltage
vs. Collector Current
100
f
T
, GAIN-BANDWIDTH PRODUCT (MHz)
550
f = 1MHz
500
450
10
400
C
ibo
350
V
CE
= -20V
f = 100MHz
1
0.01
C
obo
300
-I
C
, COLLECTOR CURRENT (mA)
Fig. 8 Typical Gain-Bandwidth Product vs. Collector Current
0.1
1
10
100
V
R
, REVERSE VOLTAGE (V)
Fig. 7 Typical Capacitance Characteristics
DS31140 Rev. 4 - 2
3 of 4
www.diodes.com
DXT3906
© Diodes Incorporated
Ordering Information
(Note 5)
Device
DXT3906-13
Notes:
5.
Packaging
SOT89-3L
Shipping
2500/Tape & Reel
NEW PRODUCT
For packaging details, go to our website at http://www.diodes.com/ap02007.pdf.
Marking Information
(Top View)
YWW
K3N
K3N = Product Type Marking Code
= Manufacturer’s Marking Code
YWW = Date Code Marking
Y = Last digit of year ex: 7 = 2007
WW = Week code 01 - 52
Package Outline Dimensions
D1
0
20
0.
R
C
SOT89-3L
Dim
A
B
Min
1.40
0.45
0.37
0.35
4.40
1.50
2.40
—
3.95
0.90
Max
1.60
0.55
0.47
0.43
4.60
1.70
2.60
—
4.25
1.20
Typ
1.50
0.50
0.42
0.38
4.50
1.60
2.50
1.50
4.10
1.05
E
H
B1
C
D
D1
E
e
B
B1
8°
e
(4X
)
L
A
H
L
D
All Dimensions in mm
Suggested Pad Layout
1.7
2.7
0.4
1.9
1.3
0.9
3.0
Unit: mm
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
DS31140 Rev. 4 - 2
4 of 4
www.diodes.com
DXT3906
© Diodes Incorporated
京公网安备 11010802033920号
EEWORLD
