DZT5551
160V NPN VOLTAGE TRANSISTOR IN SOT223
Features
•
•
•
•
•
•
•
•
•
BV
CEO
> 160V
BV
EBO
> 6V
I
C
= 600mA Continuous Collector Current
Low Saturation Voltage (150mV max @10mA)
h
FE
specified up to 50mA for a high gain hold up
Complementary PNP Type: DZT5401
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
•
•
•
•
•
•
Case: SOT223
Case material: molded plastic. “Green” molding compound.
UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin Plated Leads, Solderable per
MIL-STD-202, Method 208
Weight: 0.112 grams (approximate)
Applications
•
•
High Voltage Amplification Applications
High Voltage Switching
SOT223
Top View
Device Schematic
Pin-Out Top View
Ordering Information
(Note 4)
Part Number
DZT5551-13
Notes:
Marking
K4N
Reel size (inches)
13
Tape width (mm)
12
Quantity per reel
2,500
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen and Antimony free,"Green" and Lead-Free.
3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com
Marking Information
(Top View)
YWW
K4N = Product type marking code
= Manufacturer’s code marking
YWW = Date code marking
Y = Last digit of year ex: 7 = 2007
WW = Week code 01 - 52
DZT5551
Document number: DS31219 Rev. 3 - 2
1 of 7
www.diodes.com
November 2012
© Diodes Incorporated
DZT5551
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
Value
180
160
6
600
1
Unit
V
V
V
mA
A
Thermal Characteristics
Characteristic
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Leads (Note 6)
Operating and Storage Temperature Range
Notes:
Symbol
P
D
R
θ
JA
R
θ
JL
T
J
, T
STG
Value
2
62.5
34.05
-55 to +150
Unit
W
°C/W
°C/W
°C
5. Device mounted on 50mm X 50mm X 1.6mm FR-4 PCB with high coverage of single sided 1 oz. copper, in still air condition
6. Thermal resistance from junction to solder-point (at the end of the collector lead).
DZT5551
Document number: DS31219 Rev. 3 - 2
2 of 7
www.diodes.com
November 2012
© Diodes Incorporated
DZT5551
Thermal Characteristics and Derating Information
I
C
Collector Current (A)
1
V
CE(sat)
Limited
Max Power Dissipation (W)
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0.00
0
20
40
50mmx50mmx1.6mm
1oz Copper
100m
DC
1s
100ms
10m
Single Pulse
T
amb
=25°C
50mmx50mmx1.6mm
1oz Copper
10ms
1ms
100µs
1m
V
CE
Collector-Emitter Voltage (V)
1
10
100
Temperature (°C)
60
80
100 120 140 160
Safe Operating Area
70
100
T
=25°C
amb
Derating Curve
Thermal Resistance (°C/W)
Single Pulse
50mmx50mmx1.6mm
1oz Copper
Maximum Power (W)
60
50
T
=25°C
amb
50mmx50mmx1.6mm
1oz Copper
40
D=0.5
30
20
10
0
100µ
1m
10m 100m
1
D=0.2
Single Pulse
D=0.05
D=0.1
10
10
100
1k
1
100µ
1m
10m 100m
1
10
100
1k
Pulse Width (s)
Pulse Width (s)
Transient Thermal Impedance
Pulse Power Dissipation
DZT5551
Document number: DS31219 Rev. 3 - 2
3 of 7
www.diodes.com
November 2012
© Diodes Incorporated
DZT5551
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 7)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 7)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DC Current Gain
SMALL SIGNAL CHARACTERISTICS
Transition Frequency
Small Signal Current Gain
Output Capacitance
Noise Figure
Delay Time
Rise Time
Storage Time
Delay Time
Notes:
7. Pulse Test: Pulse width
≤
300µs. Duty cycle
≤
2.0%.
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
Min
180
160
6.0
—
—
—
Typ
270
200
7.85
<1
—
<1
Max
—
—
—
50
50
50
Unit
V
V
V
nA
µA
nA
Test Condition
I
C
= 100µA, I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 100µA, I
C
= 0
V
CB
= 120V, I
E
= 0
V
CB
= 120V, I
E
= 0, T
A
= +100°C
V
EB
= 4V, I
C
= 0
V
CE(sat)
V
BE(sat)
h
FE
—
—
—
—
80
80
30
100
50
—
—
—
—
—
—
65
115
760
840
130
145
65
130
—
—
—
95
64
1256
140
150
200
1000
1200
—
250
—
300
260
6
8
—
—
—
—
mV
mV
mV
mV
—
I
C
= 10mA, I
B
= 1mA
I
C
= 50mA, I
B
= 5mA
I
C
= 10mA, I
B
= 1mA
I
C
= 50mA, I
B
= 5mA
I
C
= 1mA, V
CE
= 5V
I
C
= 10mA, V
CE
= 5V
I
C
= 50mA, V
CE
= 5V
V
CE
= 10V, I
C
= 10mA,
f = 100MHz
V
CE
= 10V, I
C
= 10mA,
f = 1kHz
V
CB
= 10V, f = 1MHz
V
CE
= 5.0V, I
C
= 200µA,
R
S
= 1.0kΩ, f = 1.0kHz
V
CC
= 10V, I
C
= 10mA,
I
B1
= -I
B2
= 1mA
f
T
h
fe
C
obo
NF
t
(d)
t
(r)
t
(s)
t
(f)
MHz
—
pF
dB
ns
ns
ns
ns
DZT5551
Document number: DS31219 Rev. 3 - 2
4 of 7
www.diodes.com
November 2012
© Diodes Incorporated
DZT5551
Typical Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
1
Tamb=25°C
0.7
0.6
0.5
I
C
/I
B
=10
V
CE(SAT)
(V)
V
CE(SAT)
(V)
0.4
0.3
0.2
0.1
-55°C
25°C
150°C
100°C
100m
I
C
/I
B
=10
I
C
/I
B
=50
I
C
/I
B
=20
1m
10m
100m
0.0
10m
100m
I
C
Collector Current (A)
I
C
Collector Current (A)
V
CE(SAT)
v I
C
1.6
1.4
1.2
150°C
Ta=25°C
V
CE
=5V
V
CE(SAT)
v I
C
200
150
100
50
0
I
C
/I
B
=10
1.2
1.0
0.8
0.6
0.4
0.2
0.0
100µ
1m
10m
100m
-55°C
100°C
25°C
Typical Gain (h
FE
)
1.0
-55°C
25°C
Normalised Gain
V
BE(SAT)
(V)
0.8
0.6
0.4
0.2
1m
100°C
150°C
10m
100m
I
C
Collector Current (A)
I
C
Collector Current (A)
h
FE
v I
C
V
BE(SAT)
v I
C
1.0
V
CE
=5V
25°C
-55°C
V
BE(ON)
(V)
0.8
0.6
100°C
0.4
1m
10m
150°C
100m
I
C
Collector Current (A)
V
BE(ON)
v I
C
DZT5551
Document number: DS31219 Rev. 3 - 2
5 of 7
www.diodes.com
November 2012
© Diodes Incorporated
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