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DZTA92_15

Description
PNP SURFACE MOUNT TRANSISTOR
File Size202KB,4 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
Download Datasheet View All

DZTA92_15 Overview

PNP SURFACE MOUNT TRANSISTOR

DZTA92
PNP SURFACE MOUNT TRANSISTOR
Features
Epitaxial Planar Die Construction
Complementary NPN Type Available (DZTA42)
Ideally Suited for Automated Assembly Processes
Ideal for Medium Power Switching or Amplification Applications
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
3
2
1
4
NEW PRODUCT
SOT-223
COLLECTOR
Mechanical Data
Case: SOT-223
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish - Matte Tin annealed over Copper Leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Marking & Type Code Information: See Page 3
Ordering Information: See Page 3
Weight: 0.115 grams (approximate)
@T
A
= 25°C unless otherwise specified
Symbol
V
CBO
V
CEO
V
EBO
I
B
I
C
Value
-300
-300
-5
-100
-500
3 E
C4
2 C
1 B
TOP VIEW
2,4
1
BASE
3
EMITTER
Schematic and Pin Configuration
Maximum Ratings
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Base Current
Continuous Collector Current
Characteristic
Unit
V
V
V
mA
mA
Thermal Characteristics
Characteristic
Power Dissipation @ T
A
= 25°C (Note 3)
Thermal Resistance, Junction to Ambient @ T
A
= 25°C (Note 3)
Operating and Storage Temperature Range
Symbol
P
d
R
θ
JA
T
j
, T
STG
Value
1
125
-55 to +150
ο
Unit
W
C/W
°C
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cut-Off Current
Emitter-Base Cut-Off Current
ON CHARACTERISTICS (Note 4)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DC Current Gain
SMALL SIGNAL CHARACTERISTICS
Gain-Bandwidth Product
Output Capacitance
Notes:
1.
2.
3.
4.
@T
A
= 25°C unless otherwise specified
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
V
CE(SAT)
V
BE(SAT)
h
FE
Min
-300
-300
-5
25
40
25
50
Typ
Max
-0.25
-0.1
-0.5
-0.9
6
Unit
V
V
V
μA
μA
V
V
V
Test Conditions
I
C
= -100μA, I
E
= 0
I
C
= -1mA, I
B
= 0
I
E
= -100μA, I
C
= 0
V
CB
= -200V, I
E
= 0
V
EB
= -3V, I
C
= 0
I
C
= -20mA, I
B
= -2mA
I
C
= -20mA, I
B
= -2mA
I
C
= -1mA, V
CE
= -10V
I
C
= -10mA, V
CE
= -10V
I
C
= -30mA, V
CE
= -10V
I
C
= -10mA, V
CE
= -20V, f = 100MHz
V
CB
= -20V, f = 1MHz
f
T
C
obo
MHz
pF
No purposefully added lead.
Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Device mounted on FR-4 PCB, 1“ x 0.85” x 0.052”; pad layout as shown on page 4 or on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
Measured under pulsed conditions. Pulse Test: Pulse width, tp<300 uS, Duty Cycle, d< = 2%
DS30521 Rev. 4 - 2
1 of 4
www.diodes.com
DZTA92
© Diodes Incorporated
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