DNLS320E
LOW V
CE(SAT)
NPN SURFACE MOUNT TRANSISTOR
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Features
•
•
•
•
•
•
•
•
Epitaxial Planar Die Construction
Low Collector-Emitter Saturation Resistance R
CE(SAT)
= 80mΩ at 3A
High DC Current Gain h
FE
> 400 at I
C
= 2A
Complementary PNP Type Available (DPLS325E)
Ideally Suited for Automated Assembly Processes
Ideal for Medium Power Switching or Amplification Applications
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
3
2
1
4
SOT-223
COLLECTOR
2,4
BASE 1
3
EMITTER
NEW PR ODUC T
EW P R ODUCT
3 E
C 4
2 C
1 B
Mechanical Data
•
•
•
•
•
•
•
Case: SOT-223
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Finish — Matte Tin annealed over Copper Leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.112 grams (approximate)
TOP VIEW
Schematic and Pin Configuration
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
Value
20
20
5
3
8
Unit
V
V
V
A
A
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current
Thermal Characteristics
Characteristic
Power Dissipation @T
A
= 25°C (Note 3)
Thermal Resistance, Junction to Ambient Air (Note 3) @T
A
= 25°C
Operating and Storage Temperature Range
Notes:
Symbol
P
D
R
θ
JA
T
J
, T
STG
Value
1
125
-55 to +150
Unit
W
°C/W
°C
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB, pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can be found on our
website at http://www.diodes.com/datasheets/ap02001.pdf.
DS31326 Rev. 3 - 2
1 of 4
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DNLS320E
© Diodes Incorporated
Electrical Characteristics
Characteristic
Off Characteristics
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
On Characteristics (Note 4)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
DC Current Gain
AC Characteristics
Transition Frequency
Input Capacitance
Output Capacitance
Switching Times
Notes:
@T
A
= 25°C unless otherwise specified
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
Min
20
20
5
⎯
⎯
⎯
⎯
⎯
⎯
⎯
500
400
150
150
⎯
⎯
⎯
⎯
Typ
⎯
⎯
⎯
⎯
⎯
0.04
0.18
0.24
⎯
⎯
⎯
⎯
⎯
⎯
230
23
26
220
Max
⎯
⎯
⎯
100
100
0.10
0.50
0.45
0.9
0.9
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Unit
V
V
V
nA
nA
Test Condition
I
C
= 100μA, I
E
= 0
I
C
= 10mA, I
B
= 0
I
E
= 100μA, I
C
= 0
V
CB
= 16V, I
E
= 0
V
EB
= 4V, I
C
= 0
I
C
= 0.1A, I
B
= 0.5mA
I
C
= 2A, I
B
= 10mA
I
C
= 3A, I
B
= 20mA
I
C
= 1A, I
B
= 10mA
V
CE
= 2V, I
C
= 1A
V
CE
= 2V, I
C
= 0.1A
V
CE
= 2V, I
C
= 2A
V
CE
= 2V, I
C
= 6A
V
CE
= 5V, I
C
= 50mA, f = 50MHz
V
EB
= 0.5V, f = 1MHz
V
CB
= 10V, f = 1MHz
V
CC
= 10V, I
C
= 500mA
I
B1
= -I
B2
= 50mA
NEW PRODUCT
V
CE(SAT)
V
BE(SAT)
V
BE(ON)
h
FE
V
V
V
⎯
f
T
C
ibo
C
obo
t
on
t
off
MHz
pF
pF
ns
ns
4. Pulse Test: Pulse width
≤300μs.
Duty cycle
≤2.0%.
1.0
P
D
, POWER DISSIPATION (mW)
3.5
3.0
I
C
, COLLECTOR CURRENT (A)
0.8
I
B
= 5mA
2.5
2.0
1.5
I
B
= 4mA
0.6
I
B
= 3mA
0.4
I
B
= 2mA
1.0
I
B
= 1mA
0.2
0.5
0
25
50
150
100
125
75
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 1 Max Power Dissipation vs. Ambient Temperature
0
0
1
2
3
4
5
V
CE
, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 2 Typical Collector Current vs. Collector-Emitter Voltage
0
DS31326 Rev. 3 - 2
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DNLS320E
© Diodes Incorporated
2,000
0.5
V
CE(SAT)
, COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
0.01
0.1
1
10
V
BE(SAT)
, BASE-EMITTER SATURATION VOLTAGE (V)
0.4
1,500
NEW PRODUCT
0.3
1,000
0.2
500
0.1
0
0.001
0
0.001
0.01
0.1
1
10
I
C
, COLLECTOR CURRENT (A)
Fig. 4 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
V
BE(ON)
, BASE-EMITTER TURN-ON VOLTAGE (V)
1.2
1.2
1.0
1.0
0.8
0.8
0.6
0.6
0.4
0.4
0.2
0.2
0
0.001
0.01
0.1
1
10
I
C
, COLLECTOR CURRENT (A)
Fig. 5 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
0
0.001
0.01
0.1
1
10
I
C
, COLLECTOR CURRENT (A)
Fig. 6 Typical Base-Emitter Saturation Voltage
vs. Collector Current
Ordering Information
(Note 5)
Device
DNLS320E-13
Notes:
Packaging
SOT-223
Shipping
2500/Tape & Reel
5. For packaging details, go to our website at http://www.diodes.com/ap2007.pdf.
Marking Information
(Top View)
YWW
N320
N320 = Product Type Marking Code
YWW = Date Code Marking
Y = Last digit of year ex: 7 = 2007
WW = Week code 01 - 52
DS31326 Rev. 3 - 2
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DNLS320E
© Diodes Incorporated
Package Outline Dimensions
SOT-223
Dim Min Max Typ
A
1.55 1.65 1.60
A1
0.010 0.15 0.05
b1
2.90 3.10 3.00
b2
0.60 0.80 0.70
C
0.20 0.30 0.25
D
6.45 6.55 6.50
E
3.45 3.55 3.50
E1
6.90 7.10 7.00
e
—
—
4.60
e1
—
—
2.30
L
0.85 1.05 0.95
Q
0.84 0.94 0.89
All Dimensions in mm
NEW PRODUCT
Suggested Pad Layout:
DS31326 Rev. 3 - 2
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
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DNLS320E
© Diodes Incorporated
Analog electronics
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