DPLS350Y
50V PNP LOW SATURATION POWER TRANSISTOR IN SOT89
Features
BV
CEO
> -50V
I
C
= -3A High Continuous Collector Current
I
CM
up to -5A Peak Pulse Current
2W Power Dissipation
Low Saturation Voltage V
CE(sat)
< -180mV @ 1A
R
CE(sat)
= 67mΩ @ 2A for a Low Equivalent On-Resistance
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT89
Case Material: Molded Plastic, “Green” Molding Compound
UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin Plated Leads, Solderable per
MIL-STD-202, Method 208
Weight: 0.052 grams (Approximate)
SOT89
C
E
B
C
C
B
E
Top View
Device Symbol
Top View
Pin-Out
Ordering Information
(Note 4)
Part Number
DPLS350Y-13
DPLS350Y-13R
Notes:
Marking
P35
P35
Reel size (inches)
13
13
Tape width (mm)
12
12
Quantity per reel
2,500
4,000
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen and Antimony free,"Green"
and Lead-Free.
3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html
Marking Information
(Top View)
P35 = Product Type Marking Code:
YWW = Date Code Marking
Y = Last digit of year ex: 1 = 2011
WW = Week code 01 - 52
YWW
P35
DPLS350Y
Document number: DS31149 Rev. 7 - 2
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April 2014
© Diodes Incorporated
DPLS350Y
Absolute Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current
Base Current
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
Value
-50
-50
-6
-3
-5
-500
Unit
V
V
V
A
A
mA
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Power Dissipation
(Note 5)
(Note 6)
(Note 7)
(Note 5)
(Note 6)
(Note 7)
(Note 8)
Symbol
P
D
Value
1
1.6
2.0
125
78
62.5
5.7
-55 to +150
Unit
W
Thermal Resistance, Junction to Ambient Air
Thermal Resistance, Junction to Lead
Operating and Storage Temperature Range
R
θJA
R
θJL
T
J,
T
STG
°C/W
°C/W
°C
ESD Ratings
(Note 9)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Notes:
Symbol
ESD HBM
ESD MM
Value
4,000
400
Unit
V
V
JEDEC Class
3A
C
5. For a device mounted with the exposed collector pad on 15mm x 15mm 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured
under still air conditions whilst operating in a steady-state.
6. Same as note (5), except the device is mounted on 25mm x 25mm 1oz copper.
7. Same as note (5), except the device is mounted on 50mm x 50mm 1oz copper.
8. Thermal resistance from junction to solder-point (on the exposed collector pad).
9. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
DPLS350Y
Document number: DS31149 Rev. 7 - 2
2 of 7
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April 2014
© Diodes Incorporated
DPLS350Y
Thermal Characteristics and Derating Information
Max Power Dissipation (W)
Thermal Resistance (°C/W)
1.0
0.8
0.6
0.4
0.2
0.0
0
25
50
75
100
125
150
120
100
80
60
40
20
0
100µ
1m
10m 100m
1
D=0.2
D=0.1
Single Pulse
D=0.05
D=0.5
10
100
1k
Temperature (°C)
Pulse Width (s)
Derating Curve
100
Transient Thermal Impedance
Max Power Dissipation (W)
Single Pulse. T
amb
=25°C
10
1
100µ
1m
10m 100m
1
10
100
1k
Pulse Width (s)
Pulse Power Dissipation
Thermal Resistance (°C/W)
140.0
3
Maximum Power (W)
120.0
100.0
80.0
T
amb
=25°C
2oz copper
2
1oz copper
1oz copper
1
60.0
40.0
2oz copper
0
500
Copper Area (sqmm)
1000
1500
2000
2500
0
T
amb
=25°C
0
500
Copper Area (sqmm)
1000
1500
2000
2500
DPLS350Y
Document number: DS31149 Rev. 7 - 2
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April 2014
© Diodes Incorporated
DPLS350Y
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 10)
Emitter-Base Breakdown Voltage
Collector-Emitter Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CES
I
CBO
I
EBO
Min
-50
-50
-6
—
—
—
200
200
Static Forward Current Transfer Ratio (Note 10)
h
FE
200
130
80
—
Typ
—
—
—
—
—
—
Max
—
—
—
-100
-100
-50
-100
—
—
450
—
—
-90
-180
Collector-Emitter Saturation Voltage (Note 10)
V
CE(sat)
—
—
-320
-270
-390
Equivalent On-Resistance
Base-Emitter Saturation Voltage (Note 10)
Base-Emitter Turn-On Current (Note 10)
Transition Frequency
Collector Output Capacitance
Turn-On Time
Delay Time
Rise Time
Turn-Off Time
Storage Time
Fall Time
Note:
Unit
V
V
V
nA
nA
µA
nA
Test Condition
I
C
= -100µA
I
C
= -10mA
I
E
= -100µA
V
CE
= -50V
V
CB
= -50V
V
CB
= -50V, T
A
= +150°C
V
EB
= -5V
I
C
= -100mA, V
CE
= -2V
I
C
= -500mA, V
CE
= -2V
—
I
C
= -1A, V
CE
= -2V
I
C
= -2A, V
CE
= -2V
I
C
= -3A, V
CE
= -2V
I
C
= -500mA, I
B
= -50mA
I
C
= -1A, I
B
= -50mA
mV
I
C
= -2A, I
B
= -100mA
I
C
= -2A, I
B
= -200mA
I
C
= -3A, I
B
= -300mA
R
CE(sat)
V
BE(sat)
V
BE(on)
f
T
C
obo
t
on
t
d
t
r
t
off
t
s
t
f
—
—
—
100
—
—
—
—
—
—
—
67
—
—
—
—
87
41
46
294
250
44
135
-1.1
-1.2
-1.1
—
35
—
—
—
—
—
—
mΩ
V
V
MHz
pF
ns
ns
ns
ns
ns
ns
I
C
= -2A, I
B
= -200mA
I
C
= -2A, I
B
= -100mA
I
C
= -3A, I
B
= -300mA
I
C
= -1A, V
CE
= -2V
I
C
= -100mA, V
CE
= -5V,
f = 100MHz
V
CB
= -10V, I
E
= 0, f = 1MHz
V
CC
= -30v,
I
CC
= 150mA
I
B1
= - I
B2
=15mA
10. Measured under pulsed conditions. Pulse width
≤
300µs. Duty cycle
≤
2%.
DPLS350Y
Document number: DS31149 Rev. 7 - 2
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April 2014
© Diodes Incorporated
DPLS350Y
Typical Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
I
B
= -10mA
V
CE
= -2V
-I
C
, COLLECTOR CURRENT (A)
h
FE
, DC CURRENT GAIN
I
B
= -8mA
TA = 150°C
I
B
= -6mA
TA = 85°C
I
B
= -4mA
TA = 25°C
I
B
= -2mA
TA = -55°C
1
2
3
4
5
-V
CE
, COLLECTOR-EMITTER VOLTAGE (V)
Figure 1 Typical Collector Current vs.Collector-Emitter Voltage
0
-I
C
, COLLECTOR CURRENT (A)
Figure 2 Typical DC Current Gain
vs. Collector Current
-V
BE(ON)
, BASE-EMITTER TURN-ON VOLTAGE (V)
0.3
I
C
/I
B
= 10
V
CE
= -2V
-V
CE(SAT)
, COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
0.2
TA = -55°C
TA = 25°C
TA = 85°C
TA = 150°C
0.1
T A = 150°C
TA = 85°C
T A = 25°C
TA = -55°C
0
0.0001
0.001
0.01
0.1
1
10
-I
C
, COLLECTOR CURRENT (A)
Figure 3 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
-I
C
, COLLECTOR CURRENT (A)
Figure 4 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
-V
BE(SAT)
, BASE-EMITTER SATURATION VOLTAGE (V)
I
C
/I
B
= 10
TA = -55°C
TA = 25°C
T A = 85°C
T A = 150°C
-I
C
, COLLECTOR CURRENT (A)
Figure 5 Typical Base-Emitter Saturation Voltage
vs. Collector Current
C
obo
, OUTPUT CAPACITANCE (pF)
f = 1MHz
V
R
, REVERSE VOLTAGE (V)
Figure 6 Typical Output Capacitance Characteristics
DPLS350Y
Document number: DS31149 Rev. 7 - 2
5 of 7
www.diodes.com
April 2014
© Diodes Incorporated
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