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LED39-PR

Description
Mid-Infrared Light Emitting Diode
File Size440KB,3 Pages
ManufacturerRoithner Lasertechnik GmbH
Websitehttp://www.roithner-laser.com/
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LED39-PR Overview

Mid-Infrared Light Emitting Diode

LED39-PR
TECHNICAL DATA
Mid-Infrared Light Emitting Diode
Light Emitting Diodes with central wavelength 3.90 µm series are based on heterostructures grown
on InAs substrates by MOCVD. InAsSb is used in the active layer. Wide band gap solid solutions
InAsSbP with P content 50% are used for good electron confinement.
LED39-PR has a stable ouput power and a lifetime more then 80000 hours.
Specifications
Structure:
Peak Wavelength:
Optical Output Power:
Package:
InAsSb/InAsSbP
typ. 3.90 µm
typ. 20 µW qCW
TO-18
with PR and without window
Absolute Maximum Ratings (T
A
=25°C)
Item
Peak Wavelength
FWHM
Quasi-CW
Optical Power
Pulsed
Optical Power
Switching Time
Operation Voltage
Operating
Temperature
Emitting Area
Soldering
Temperature
Package
Condition
T=300 K
150 mA CW
200 mA qCW
1A
T=300 K
200 mA qCW
Min.
3.85
0.55
15
180
10
0.2
-200 … +50
300 x 300
180
Value
Typ.
3.90
0.65
20
200
20
-
Max.
3.94
0.75
30
220
30
0.8
Unit
µm
µm
µW
mW
ns
V
°C
µm
°C
TO-18, with parabol reflector and without window
(Unit: mm)
Operation Instructions
LED basic circuit connection
We recommend to use one of our drivers
and evaluation boards designed for those
Mid-IR LEDs
D-11, D-31, D-31M
DLT-27, DLT-37
mD-1c, mD-1p
10.09.2012
LED39-PR
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