LED19FC
TECHNICAL DATA
Mid-Infrared Light Emitting Diode, Flip-Chip Design
Light Emitting Diodes with central wavelength 1.95 µm series are based on heterostructures grown
on GaSb substrates by LPE. Solid solutions AlGaAsSb are used in the active layer. Wide band gap
solid solutions AlGaAsSb with Al content 64% are used for good electron confinement.
LED19FC has a stable ouput power and a lifetime more then 80000 hours.
Features
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•
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Structure: GaInAsSb/AlGaAsSb, Flip-Chip Design
Peak Wavelength: typ. 1.95 µm
Optical Ouput Power: typ. 1.0 mW qCW
Package: TO-18, with cap and window
Specifications
Item
Peak Wavelength
FWHM
Quasi-CW
Optical Power
Pulsed
Optical Power
Switching Time
Operation Voltage
Operating
Temperature
Emitting Area
Soldering
Temperature
Package
Condition
T=300 K
150 mA CW
200 mA qCW
1A
T=300 K
200 mA qCW
Min.
1.90
100
0.8
20
10
-240 … +50
670x770
180
TO-18, with non-removeable cap and
transparent window
Rating
Typ.
1.95
150
1.0
25
20
Max.
1.99
200
1.4
35
30
Unit
µm
nm
mW
mW
ns
V
°C
µm
°C
(Unit: mm)
Operating Regime
Quasi-CW
•
•
Maximum current 220 mA
Recommended current 150-200mA
Pulsed
•
Maximum current 1 A
(puls lenght 500 ns, repetition rate 2kHz)
06.10.2010
LED19FC
1 of 2
Integrated technical exchanges
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