MBR1045 datasheet, PDF - EEWORLD Datasheet

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MBR1045: Description10 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AC; Categorysemiconductor Discrete semiconductor; File Size148KB，2 Pages; ManufacturerDACHANG; Websitehttp://www.dachang.com.cn

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MBR1045 Overview

10 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AC

MBR1045 Parametric

Parameter Name	Attribute value
Number of terminals	2
Number of components	1
Processing package description	GREEN, PLASTIC PACKAGE-2
state	ACTIVE
packaging shape	Rectangle
Package Size	Flange mounting
Terminal form	THROUGH-hole
terminal coating	PURE Tin
Terminal location	single
Packaging Materials	Plastic/Epoxy
Craftsmanship	SCHOTTKY
structure	single
Shell connection	CATHODE
Diode component materials	silicon
Diode type	rectifier diode
application	EFFICIENCY
Phase	1
Maximum repetitive peak reverse voltage	45 V
Maximum average forward current	10 A
Maximum non-repetitive peak forward current	150 A

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SIYU

肖特基二极管

反向电压

40---200V

正向电流

10 A

TO-220AC

.420(10.67)

.380(9.65)

.189(4.8)

.138(3.5)

.054(1.4)

.045(1.14)

MBR1040 ...... MBR10200

Schottky Barrier Rectifier

Reverse Voltage 40 to 200 V

Forward Current 10 A

特征

Features

·大电流承受½力。High

Current Capability

·正向压降½。Low

Forward Voltage Drop

.625(15.88)

.560(14.22)

.270(6.86)

.230(5.84)

Φ.138(3.5)

Φ.118(3.0)

· ½功耗高效率。Low

Power Loss，High Efficiency

·引线和管½皆符合RoHS标准。

Lead and body according with RoHS standard

.138(3.5)

MAX

.025(0.65)

MAX

.500(12.70)

MIN

机械数据

Mechanical Data

·封装:

塑料封装

Case: Molded Plastic

·极性:

标记模压或印于本½

Polarity: Symbols molded or marked on body

·安装½½:

任意

Mounting Position: Any

·安装扭距:

推荐值

0.3牛*米

Mounting torque：

Recommend 0.3 N*m

.028(0.7)

.019(0.5)

.115(2.92)

.080(2.03)

.109(2.79) .109(2.79)

.090(2.29) .090(2.29)

Unit：inch（mm）

极限值和温度特性

TA = 25℃

除非另有规定。

Maximum Ratings & Thermal Characteristics

符号

Ratings at 25℃ ambient temperature unless otherwise specified.

MBR

Symbols

1040

MBR

1045

31.5

MBR

1050

MBR

1060

10.0

150

2.0

MBR MBR

10100 10150

100

150

105

150

MBR

10200

200

140

200

单½

Unit

最大可重复峰值反向电压

Maximum repetitive peak reverse voltage

RRM

RMS

F(AV)

FSM

θJC

Tj, TSTG

最大均方根电压

Maximum RMS voltage

最大直流阻断电压

Maximum DC blocking voltage

最大正向平均整流电流

Maximum average forward rectified current

峰值正向浪涌电流 8.3ms单一正弦半波

Peak forward surge current 8.3 ms single half sine-wave

典型热阻

Typical thermal resistance

工½结温和存储温度

Operating junction and storage temperature range

℃

-55--- +150

电特性

TA = 25℃

除非另有规定。

Electrical Characteristics

Ratings at 25℃ ambient temperature unless otherwise specified.

符号

Symbols

最大正向电压

Maximum forward voltage

MBR

1040

MBR

1045

MBR

1050

MBR

1060

MBR MBR

10100 10150

0.85

0.95

0.1

500

MBR

10200

0.99

单½

Unit

= 10A

TA= 25℃

TA=100℃

0.70

0.1

0.80

最大反向电流

Maximum reverse curren

典型结电容

4.0V, f = 1MHz

Type junction capacitance

大昌电子

DACHANG ELECTRONICS

MBR1045 Related Products

	MBR1045	MBR10100	MBR10150	MBR10200	MBR1040	MBR1040_15	MBR1060
Description	10 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AC	RECTIFIER DIODE,SCHOTTKY,100V V(RRM),TO-220AC	10 A, 150 V, SILICON, RECTIFIER DIODE, TO-220AC	10 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AC	10 A, 40 V, SILICON, RECTIFIER DIODE, TO-220AC	RECTIFIER DIODE,SCHOTTKY,100V V(RRM),TO-220AC	10 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AC
state	ACTIVE	CONSULT MFR	-	-	-	CONSULT MFR	ACTIVE
Diode type	rectifier diode	rectifier diode	-	-	-	rectifier diode	rectifier diode

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