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MBR2050CT

Description
10 A, 50 V, SILICON, RECTIFIER DIODE, TO-220AB
Categorysemiconductor    Discrete semiconductor   
File Size130KB,2 Pages
ManufacturerDACHANG
Websitehttp://www.dachang.com.cn
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MBR2050CT Overview

10 A, 50 V, SILICON, RECTIFIER DIODE, TO-220AB

SIYU
R
MBR2040CT ...... MBR20200CT
Schottky Barrier Rectifier
Reverse Voltage 40 to 200 V
Forward Current 20A
特征
Features
·大电流承受½力。High
Current Capability
·正向压降½。Low
Forward Voltage Drop
·½功耗高效率。Low
Power Loss,High Efficiency
·引线和管½皆符合RoHS标准 。
Lead and body according with RoHS standard
肖特基二极管
反向电压
40---200V
正向电流
20 A
TO-220AB
机械数据
Mechanical Data
·封装:
塑料封装
Case: Molded Plastic
·极性:
标记模压或印于本½
Polarity: Symbols molded or marked on body
·安装½½:
任意
Unit:inch(mm)
1
2
3
Mounting Position: Any
·安装扭距:
推荐值
0.3牛*米
Mounting torque:
Recommend 0.3 N*m
极限值和温度特性
TA = 25℃
除非另有规定。
Maximum Ratings & Thermal Characteristics
符号
Ratings at 25℃ ambient temperature unless otherwise specified.
MBR
MBR
MBR
MBR
MBR
MBR
MBR
Symbols
2040CT 2045CT 2050CT 2060CT 20100CT 20150CT 20200CT
单½
Unit
V
V
V
A
A
最大可重复峰值反向电压
Maximum repetitive peak reverse voltage
V
RRM
40
28
40
45
31
45
50
35
50
60
42
60
20
150
100
70
100
150
105
150
200
140
200
最大均方根电压
Maximum RMS voltage
V
RMS
V
DC
I
F(AV)
I
FSM
R
θJC
Tj, TSTG
最大直流阻断电压
Maximum DC blocking voltage
最大正向平均整流电流
Maximum average forward rectified current
峰值正向浪涌电流 8.3ms单一正弦半波
Peak forward surge current 8.3 ms single half sine-wave
典型热阻
Typical thermal resistance
1.5
-55 --- +150
3.5
/W
工½结温和存储温度
Operating junction and storage temperature range
电特性
TA = 25℃
除非另有规定。
Electrical Characteristics
Ratings at 25℃ ambient temperature unless otherwise specified.
MBR
MBR
MBR
MBR
MBR
MBR
MBR
Symbols
2040CT 2045CT 2050CT 2060CT 20100CT 20150CT 20200CT
符号
V
F
I
R
单½
Unit
V
mA
pF
最大正向电压
Maximum forward voltage
I
F
=10A
T
J
= 25℃
T
J
= 100℃
0.63
0.10
15
400
0.75
0.85
0.15
150
310
0.95
0.99
最大反向电流
Maximum reverse current
典型结电容
V
R
=
4.0V, f = 1MHz
Type junction capacitance
Cj
大昌电子
DACHANG ELECTRONICS

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