KBP307G datasheet, PDF - EEWORLD Datasheet

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KBP307G: DescriptionBRIDGE RECTIFIER DIODE; Categorysemiconductor Discrete semiconductor; File Size138KB，2 Pages; ManufacturerDACHANG; Websitehttp://www.dachang.com.cn

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KBP307G Overview

BRIDGE RECTIFIER DIODE

KBP307G Parametric

Parameter Name	Attribute value
state	ACTIVE
Diode type	bridge rectifier diode

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SIYU

KBP301G......KBP307G

Single-phase Silicon Bridge Rectifier

Reverse Voltage 50 to 1000 V

Forward Current 3.0A

特征

Features

·反向漏电流½

Low reverse leakage

High forward surge capability

Surge

overload rating: 80 Amperes peak

·正向浪涌承受½力较强

·浪涌承受½力：80 A

塑封硅整流桥堆

反向电压

50---1000V

正向电流

3.0 A

KBP

·引线和管½皆符合RoHS标准。

Lead and body according with RoHS standard

机械数据

Mechanical Data

·封装:

塑料封装

Case: Molded Plastic

·极性:

标记模压或印于本½

Polarity: Symbols molded or marked on body

·安装½½:

任意

Unit(mm)

Mounting Position: Any

极限值和温度特性

TA = 25℃

除非另有规定。

Maximum Ratings & Thermal Characteristics

符号

Ratings at 25℃ ambient temperature unless otherwise specified.

KBP KBP KBP KBP KBP KBP KBP

Symbols

301G 302G 303G 304G 305G 306G 307G

最大可重复峰值反向电压

Maximum repetitive peak reverse voltage

最大均方根电压

Maximum RMS voltage

最大直流阻断电压

Maximum DC blocking voltage

=50℃

最大正向平均整流电流

Maximum average forward rectified current

单½

Unit

RRM

RMS

F(AV)

FSM

θJA

TSTG

100

200

140

200

400

280

400

600

420

600

800

560

800

1000

700

1000

3.0

峰值正向浪涌电流 8.3ms单一正弦半波

Peak forward surge current 8.3 ms single half sine-wave

典型热阻

工½结温

Typical thermal resistance

℃

Operating junction

-55 --- +125

-55 --- +150

存储温度

Storage temperature range

电特性

TA = 25℃

除非另有规定。

Electrical Characteristics

Ratings at 25℃ ambient temperature unless otherwise specified.

符号

Symbols

最大正向电压

Maximum forward voltage

KBP KBP KBP KBP KBP KBP KBP

301G 302G 303G 304G 305G 306G 307G

1.1

500

单½

Unit

μA

=3.0A

TA= 25℃

TA = 125℃

最大反向电流

Maximum reverse current

大昌电子

DACHANG ELECTRONICS

KBP307G Related Products

	KBP307G	KBP301G	KBP301G_15	KBP302G	KBP303G	KBP304G	KBP305G	KBP306G
Description	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	3 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE	3 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE	3 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE	3 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE

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