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BC847AT_15

Description
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
File Size126KB,3 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
Download Datasheet View All

BC847AT_15 Overview

NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

BC847AT, BT, CT
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
Epitaxial Die Construction
Complementary PNP Types Available
(BC857AT,BT,CT)
Ultra-Small Surface Mount Package
Lead Free/RoHS Compliant (Note 2)
"Green" Device (Note 4 and 5)
B
G
H
K
M
A
C
TOP VIEW
E
B C
SOT-523
Dim
A
B
C
D
G
H
J
N
Min
0.15
0.75
1.45
0.90
1.50
0.00
0.60
0.10
0.10
0.45
Max
0.30
0.85
1.75
1.10
1.70
0.10
0.80
0.30
0.20
0.65
Typ
0.22
0.80
1.60
0.50
1.00
1.60
0.05
0.75
0.22
0.12
0.50
Mechanical Data
Case: SOT-523
Case Material - Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over
Alloy 42 leadframe).
Terminal Connections: See Diagram
Marking Code: See Table
Ordering Information: See Page 2
Marking Information: See Page 2
Weight: 0.002 grams (approximate)
K
L
M
J
D
L
Type
BC847AT
BC847BT
BC847CT
Marking
1E
1F
1M
N
α
All Dimensions in mm
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
d
R
θ
JA
T
j
, T
STG
Value
50
45
6.0
100
150
833
-55 to +150
Unit
V
V
V
mA
mW
°C/W
°C
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Electrical Characteristics
DC Current Gain
Characteristic
(Note 3)
@T
A
= 25°C unless otherwise specified
Symbol
Current Gain A
B
C
(Note 3)
(Note 3)
(Note 3)
(Note 3)
h
FE
V
CE(SAT)
V
BE(SAT)
V
BE
I
CBO
I
CBO
f
T
C
OBO
BC847BT
BC847CT
NF
Min
110
200
420
580
100
Typ
290
520
700
900
660
Max
220
450
800
250
600
700
770
15
5.0
4.5
10
4.0
Unit
mV
mV
mV
nA
µA
MHz
pF
dB
Test Condition
V
CE
= 5.0V, I
C
= 2.0mA
I
C
= 10mA, I
B
= 0.5mA
I
C
= 100mA, I
B
= 5.0mA
I
C
= 10mA, I
B
= 0.5mA
I
C
= 100mA, I
B
= 5.0mA
V
CE
= 5.0V, I
C
= 2.0mA
V
CE
=5.0V, I
C
= 10mA
V
CB
= 30V
V
CB
= 30V, T
A
= 150°C
V
CE
= 5.0V, I
C
= 10mA,
f = 100MHz
V
CB
= 10V, f = 1.0MHz
V
CE
= 5V, R
S
= 2.0kΩ,
f = 1.0kHz, BW = 200Hz
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Voltage
Collector-Emitter Cutoff Current
Gain Bandwidth Product
Output Capacitance
Noise Figure
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
3. Short duration pulse test used to minimize self-heating effect.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
5. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
DS30274 Rev. 9 - 2
1 of 3
www.diodes.com
BC847AT, BT, CT
© Diodes Incorporated

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