TSM040N03CP
30V N-Channel Power MOSFET
TO-252
(DPAK)
Pin Definition:
1. Gate
2. Drain
3. Source
Key Parameter Performance
Parameter
V
DS
V
GS
= 10V
R
DS(on)
(max)
Q
g
V
GS
= 4.5V
Value
30
4
Unit
V
mΩ
6
24
nC
Ordering Information
Part No.
Package
Packing
TSM040N03CP ROG
TO-252
2.5kpcs / 13” Reel
Note:
“G” denotes for Halogen- and Antimony-free as those which contain
<900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds
Block Diagram
N-Channel MOSFET
Absolute Maximum Ratings
(T
C
=25
o
C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
(Note 1)
Single Pulse Avalanche Energy
(Note 2)
Single Pulse Avalanche Current
(Note 2)
Total Power Dissipation
@ T
C
=25
o
C
Derate above T
C
=25
o
C
T
C
=25ºC
T
C
=100ºC
Symbol
V
DS
V
GS
I
D
I
DM
E
AS
I
AS
P
D
T
J
T
STG
Limit
30
±20
90
57
360
125
50
88
0.59
150
-55 to +150
Unit
V
V
A
A
A
mJ
A
W
W/ºC
ºC
o
Operating Junction Temperature
Storage Temperature Range
C
Thermal Performance
Parameter
Thermal Resistance - Junction to Case
Thermal Resistance - Junction to Ambient
Symbol
R
ӨJC
R
ӨJA
Limit
1.7
62
Unit
o
o
C/W
C/W
1/5
Version: A14
TSM040N03CP
30V N-Channel Power MOSFET
Electrical Specifications
(T
C
=25
o
C unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Drain-Source On-State Resistance
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage
Forward Transconductance
Dynamic
Total Gate Charge
(Note 3,4)
Gate-Source Charge
(Note 3,4)
Gate-Drain Charge
(Note 3,4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Switching
Turn-On Delay Time
(Note 3,4)
Conditions
V
GS
= 0V, I
D
= 250µA
V
GS
= 10V, I
D
= 24A
V
GS
= 4.5V, I
D
= 12A
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 30V, V
GS
= 0V
V
DS
= 24V, T
J
= 125ºC
V
GS
= ±20V, V
DS
= 0V
V
DS
= 10V, I
D
= 10A
Symbol
BV
DSS
R
DS(ON)
V
GS(TH)
I
DSS
I
GSS
g
fs
Min
30
--
--
1.2
--
--
--
--
Typ
--
3.1
4.5
1.6
--
--
--
15.5
Max
--
4
6
2.5
1
10
±100
--
Unit
V
mΩ
V
µA
nA
S
Q
g
V
DS
= 15V, I
D
= 24A,
V
GS
= 4.5V
Q
gs
Q
gd
C
iss
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
C
oss
C
rss
R
g
--
--
--
--
--
--
--
24
4.2
13
2200
280
177
2
--
--
--
--
--
--
--
Ω
pF
nC
t
d(on)
V
DD
=15V , V
GS
=10V ,
R
G
=3.3, I
D
=-15A
t
r
t
d(off)
t
f
--
--
--
--
12.6
19.5
42.8
13.2
--
--
--
--
ns
Turn-On Rise Time
(Note 3,4)
Turn-Off Delay Time
(Note 3,4)
Turn-Off Fall Time
(Note 3,4)
Source-Drain Diode Ratings and Characteristic
Continuous Drain-Source Diode
Pulse Drain-Source Diode
Diode-Source Forward Voltage
V
G
=V
D
=0V
Force Current
V
GS
= 0V, I
S
= 1A
I
S
I
SM
V
SD
--
--
--
--
--
--
90
360
1
A
A
V
Note:
1. Repetitive Rating: Pulsed width limited by maximum junction temperature.
2. V
DD
=25V, V
GS
=10V, L=0.1mH, I
AS
=50A, R
G
=25, Starting T
J
=25
o
C
3. The data tested by pulsed, pulse width ≤300µs, duty cycle ≤2%
4. Essentially independent of operating temperature
.
2/5
Version: A14
TSM040N03CP
30V N-Channel Power MOSFET
Electrical Characteristics Curves
Continuous Drain Current vs. Tc
I
D
, Continuous Drain Current (A)
Normalized RDSON vs. T
J
Normalized On Resistance
T
C
, Case Temperature (
o
C)
Normalized V
th
vs. T
J
Normalized Gate Threshold Voltage
(V)
V
GS
, Gate to Source Voltage (V)
T
J
, Junction Temperature (
o
C)
Gate Charge Waveform
T
J
, Junction Temperature (
o
C)
Normalized Transient Impedance
Normalized Thermal Response (R
θJC
)
I
D
, Continuous Drain Current (A)
Qg , Gate Charge (nC)
Maximum Safe Operation Area
Square Wave Pulse Duration
(s)
V
DS
, Drain to Source Voltage
(V)
3/5
Version: A14
TSM040N03CP
30V N-Channel Power MOSFET
TO-252 Mechanical Drawing
Unit: Millimeters
Marking Diagram
Y
= Year Code
M
= Month Code for Halogen Free Product
(O=Jan,
P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep,
X=Oct, Y=Nov, Z=Dec)
L
= Lot Code
4/5
Version: A14
TSM040N03CP
30V N-Channel Power MOSFET
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
5/5
Version: A14
京公网安备 11010802033920号
EEWORLD
