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S1D

Description
SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size112KB,2 Pages
ManufacturerDACHANG
Websitehttp://www.dachang.com.cn
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S1D Overview

SIGNAL DIODE

S1D Parametric

Parameter NameAttribute value
stateACTIVE
Diode typeSIGNAL DIODE
SIYU
R
表面安装普通整流二极管
反向电压
50 --- 1000 V
正向电流
1.0 A
SMA
S1A ...... S1M
Surface Mount General Rectifier
Reverse Voltage 50 --- 1000 V
Forward Current 1.0 A
特征
Features
·反向漏电流½
Low reverse leakage
High forward surge capability
.114(2.90)
.098(2.50)
.062(1.60)
.055(1.20)
·正向浪涌承受½力较强
.181(4.60)
.157(4.00)
.012(0.305)
.006(0.152)
.096(2.44)
.078(2.00)
·高温焊接保证
High temperature soldering guaranteed:
260℃/10
seconds at terminals
·引线和管½皆符合RoHS标准 。
Lead and body according with RoHS standard
.060(1.52)
.030(0.76)
.208(5.28)
.118(4.80)
.008(0.203)
.002(0.051)
机械数据
Mechanical Data
·封装: 塑料封装
Case: Molded plastic body
·端子: 焊料被镀
Terminals: Solder plated
·极性: 色环端为负极
Polarity: Color band denotes cathode end
·安装½½: 任意
Mounting Position: Any
Unit:inch(mm)
极限值和电参数
TA = 25℃
除非另有规定。
Maximum Ratings & Electrical Characteristics
符号
Symbols
最大峰值反向电压
Maximum repetitive peak reverse voltage
Ratings at 25℃ ambient temperature unless otherwise specified.
S1A
S1B
S1D
S1G
S1J
S1K
S1M
单½
Unit
V
RRM
V
R(RMS)
V
DC
I
AV
V
F
I
FSM
IR
R
θJA
Cj
Tj, T
STG
50
35
50
100
70
100
200
140
200
400
280
400
1.0
1.1
30
5
50
600
420
600
800
560
800
1000
700
1000
V
V
V
A
V
A
uA
最大反向有效值电压
Maximum RMS voltage
最大直流阻断电压
Maximum DC blocking voltage
最大正向平均整流电流
Maximum average forward rectified current
最大正向电压降
Maximum forward voltage
IF =1.0A
正向峰值浪涌电流 8.3mS单一正弦半波
Peak forward surge current 8.3 ms single half sine-wave
最大反向漏电流
Maximum reverse current
TA = 25℃
TA =100℃
典型热阻
典型结电容
Typical thermal resistance
75
12
-55 --- +150
85
℃/W
pF
VR = 4.0V
f = 1.0MHz
Type junction capacitance
工½温度和存储温度
Operating junction and storage temperature range
大昌电子
DACHANG ELECTRONICS

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S1D S1B S1K S1A S1G S1J S1M
Description SIGNAL DIODE 1 A, 100 V, SILICON, SIGNAL DIODE, DO-214AC 1 A, 800 V, SILICON, SIGNAL DIODE, DO-214AC 1 A, 50 V, SILICON, SIGNAL DIODE, DO-214AA 1 A, 400 V, SILICON, SIGNAL DIODE 1 A, 600 V, SILICON, SIGNAL DIODE, DO-214AC 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-214AC
state ACTIVE ACTIVE - ACTIVE DISCONTINUED ACTIVE DISCONTINUED
Diode type SIGNAL DIODE Signal diode - SIGNAL DIODE Signal diode Signal diode Signal diode
Number of terminals - 2 - 2 2 2 2
Number of components - 1 - 1 1 1 1
Processing package description - GREEN, PLASTIC, SMA, 2 PIN - ROHS COMPLIANT, PLASTIC, SMB, 2 PIN - GREEN, PLASTIC, SMA, 2 PIN Plastic, SMA, 2 PIN
Lead-free - Yes - Yes - Yes Yes
EU RoHS regulations - Yes - Yes - Yes Yes
packaging shape - Rectangle - RECTANGULAR Rectangle Rectangle Rectangle
Package Size - SMALL OUTLINE - SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
surface mount - Yes - Yes Yes Yes Yes
Terminal form - C BEND - C BEND C BEND C BEND C BEND
terminal coating - PURE Tin - NOT SPECIFIED - PURE Tin tin/silver
Terminal location - pair - DUAL pair pair pair
Packaging Materials - Plastic/Epoxy - PLASTIC/EPOXY Plastic/Epoxy Plastic/Epoxy Plastic/Epoxy
structure - single - SINGLE single single single
Diode component materials - silicon - SILICON silicon silicon silicon
Maximum repetitive peak reverse voltage - 100 V - 50 V 400 V 600 V 1000 V
Maximum average forward current - 1 A - 1 A 1 A 1 A 1 A
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