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DTC114WE

Description
NPN Small Signal Transistor
CategoryDiscrete semiconductor    The transistor   
File Size359KB,6 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Download Datasheet Parametric View All

DTC114WE Overview

NPN Small Signal Transistor

DTC114WE Parametric

Parameter NameAttribute value
MakerTaiwan Semiconductor
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codecompli
Other featuresBUILT IN BIAS RESISTANCE RATIO IS 0.47
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)24
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)250 MHz
DTC114 EM/EE/EUA/ECA/ESA
Taiwan Semiconductor
Small Signal Product
NPN Small Signal Transistor
FEATURES
- Built-in bias resistors enable the configuration of an inverter
circuit without connecting external input resistor
(see equivalent circuit).
- The bias resistors consist of thin-film resistors with
complete isolation to allow negative biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
- Only the on/off conditions need to be set for
operation, marking device design easy.
- Packing code with suffix "G" means
green compound (halogen-free)
Equivalent Circuit
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25℃ unless otherwise noted)
PARAMETER
Power Dissipation
Supply Voltage
Input Voltage
Output Current
Junction and Storage Temperature Range
SYMBOL
P
D
V
CC
V
IN
I
O
I
C(MAX)
T
J
, T
STG
EM
100
EE
150
VALUE
EUA / ECA
200
50
-10
½
+40
50
100
-55 to + 150
ESA
300
UNIT
mW
V
V
mA
°C
Notes: 1. Valid provided that electrodes are kept at ambient temperature
PARAMETER
Input Voltage
Output Voltage
Input Current
Output Current
DC Current Gain
Input Resistance
Resistance Ratio
Transition Frequency
SYMBOL
V
I(on)
V
I(off)
V
O(on)
I
I
I
O(off)
G
I
R
1
R
2
/R
1
f
T
MIN
-
0.5
-
-
-
30
7
0.8
-
TYP
-
-
-
-
-
-
10
1
250
MAX
3
-
0.3
0.88
0.5
-
13
1.2
-
V
O
=10V,I
O
=5mA,f=100MHz
MHz
CONDITION
V
CC
=5V,I
O
=100μA
V
O
=0.3V,I
O
=10mA
I
O
/I
I
=10mA/0.5mA
V
I
=5V
V
CC
=50V,V
I
=0
V
O
=5V,I
O
=5mA
KΩ
UNIT
V
V
mA
μA
Document Number: DS_S1412029
Version: C14

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