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UGF8J_13

Description
8 A, 600 V, SILICON, RECTIFIER DIODE, TO-220AC
Categorysemiconductor    Discrete semiconductor   
File Size166KB,3 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
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UGF8J_13 Overview

8 A, 600 V, SILICON, RECTIFIER DIODE, TO-220AC

UGF8J
8.0 AMPS Isolated Ultra Fast Rectifier
ITO-220AC
Features
High efficiency, low VF
High current capability
High reliability
High surge current capability
Low power loss
For use in low voltage, high frequency inverter,
Free wheeling, and polarity protection application
Mechanical Data
Case : ITO-220AC
Epoxy :UL 94V-0 rate flame retardant
Terminals: Pure tin plated, lead free, solderable
per MIL-STD-202, Method 208 guaranteed
Polarity: As marked
High temperature soldering guaranteed:
260℃/10 seconds. 16",(4.06mm) from case.
Weight: 1.70 grams
Ordering Information
Part No.
UGF8J
Package
ITO-220AC
Packing
50 / TUBE
Packing code
C0
Packing code
(Green)
C0G
Maximum Ratings and Electrical Characteristics
Rating at 25
ambient temperature unless otherwise specified.
Parameter
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC blocking voltage
Maximum Average Forward Rectified Current
Peak Forward Surge Current, 8.3 ms Single Half Sine-wave
Superimposed on Rated Load
Maximum Instantaneous Forward Voltage (Note 1)
@ 8 A / T
A
=25℃
@ 8 A / T
A
=125℃
Maximum DC Reverse Current at
Rated DC Blocking Voltage
Typical Thermal Resistance
Operating Temperature Range
Storage Temperature Range
T
A
=25
T
A
=125
Symbol
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
UGF8J
600
420
600
8
65
Unit
V
V
V
A
A
V
F
2.9
2.0
30
200
25
5.5
-55 to + 150
-55 to + 150
O
V
I
R
Trr
R
θJC
T
J
T
STG
uA
nS
C/W
O
O
Max Reverse Recovery Time(Note 2)
C
C
Note 1: Pulse Test with PW=300 usec, 1% Duty Cycle
Note 2: Reverse Recovery Time Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
Version:E13

UGF8J_13 Related Products

UGF8J_13 UGF8J
Description 8 A, 600 V, SILICON, RECTIFIER DIODE, TO-220AC 8 A, 600 V, SILICON, RECTIFIER DIODE, TO-220AC

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