VS-6ESH02HM3
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Vishay Semiconductors
Hyperfast Rectifier, 6 A FRED Pt
®
FEATURES
• Hyperfast recovery time, reduced Q
rr
, and soft
recovery
K
K
Anode 1
Anode 2
• 175 °C maximum operating junction temperature
• Specified for output and snubber operation
• Low forward voltage drop
• Low leakage current
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• AEC-Q101 qualified, meets JESD 201 class 2 whisker test
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
1
Cathode
2
TO-277A (SMPC)
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
t
rr
(typ.)
T
J
max.
Diode variation
TO-277A (SMPC)
6A
200 V
0.94 V
28 ns
175 °C
Single die
DESCRIPTION / APPLICATIONS
State of the art hyperfast recovery rectifiers specifically
designed with optimized performance of forward voltage
drop and hyperfast recovery time.
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness, and
reliability characteristics.
These devices are intended for use in snubber, boost,
lighting, piezo-injection, as high frequency rectifiers and
freewheeling diodes.
The extremely optimized stored charge and low recovery
current minimize the switching losses and reduce power
dissipation in the switching element.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Peak repetitive reverse voltage
Average rectified forward current
Non-repetitive peak surge current
Operating junction and storage temperatures
SYMBOL
V
RRM
I
F(AV)
I
FSM
T
J
, T
Stg
T
Sp
= 160 °C
T
J
= 25 °C
TEST CONDITIONS
VALUES
200
6
150
-65 to +175
UNITS
V
A
°C
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
Forward voltage
SYMBOL
V
BR
,
V
R
V
F
I
R
C
T
TEST CONDITIONS
I
R
= 100 μA
I
F
= 6 A
I
F
= 6 A, T
J
= 125 °C
V
R
= V
R
rated
T
J
= 125 °C, V
R
= V
R
rated
V
R
= 200 V
MIN.
200
-
-
-
-
-
TYP.
-
0.87
0.74
-
3
33
MAX.
-
0.94
0.8
2
15
-
μA
pF
V
UNITS
Reverse leakage current
Junction capacitance
Revision: 25-Nov-14
Document Number: 94983
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-6ESH02HM3
www.vishay.com
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
I
F
= 1.0 A, dI
F
/dt = 50 A/μs, V
R
= 30 V
Reverse recovery time
t
rr
I
F
= 0.5 A, I
R
= 1 A, I
rr
= 0.25 A
T
J
= 25 °C
T
J
= 125 °C
Peak recovery current
I
RRM
Q
rr
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
I
F
= 6 A
dI
F
/dt = 200 A/μs
V
R
= 160 V
MIN.
-
-
-
-
-
-
-
-
TYP.
28
-
22
33
2.4
5.0
27
80
MAX.
-
25
-
-
-
-
-
-
A
ns
UNITS
Reverse recovery charge
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and
storage temperature range
Thermal resistance,
junction to solder pad
Approximate weight
Marking device
Case style TO-277A (SMPC)
SYMBOL
T
J
, T
Stg
R
thJ-Sp
TEST CONDITIONS
MIN.
-65
-
TYP.
-
2.2
0.1
0.0035
NEH2
MAX.
175
3
UNITS
°C
°C/W
g
oz.
I
F
- Instantaneous Forward Current (A)
100
100
175 °C
I
R
- Reverse Current (μA)
10
150 °C
125 °C
10
T
J
= 175 °C
1
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1
25 °C
0.1
0.01
0.001
0
50
100
150
200
V
F
- Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
Revision: 25-Nov-14
Document Number: 94983
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
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VS-6ESH02HM3
www.vishay.com
1000
7
RMS limit
6
5
4
3
2
1
0
0
50
100
150
200
0
2
4
6
8
10
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
DC
Vishay Semiconductors
C
T
- Junction Capacitance (pF)
100
10
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Average Power Loss (W)
I
F(AV)
- Average Forward Current (A)
Fig. 5 - Forward Power Loss Characteristics
180
45
40
Allowable Case Temperature (°C)
175
35
30
25 °C
170
DC
165
Square
wave (D = 0.50)
80 % rated V
R
applied
160
See
note
(1)
155
0
1
2
3
4
5
6
7
t
rr
(ns)
25
20
15
10
5
0
100
1000
125 °C
I
F(AV)
- Average Forward Current (A)
Fig. 4 - Maximum Allowable Case Temperature
vs. Average Forward Current
140
120
100
125 °C
dI
F
/dt (A/μs)
Fig. 6 - Typical Reverse Recovery Time vs. dI
F
/dt
Q
rr
(nC)
80
60
25 °C
40
20
0
100
1000
dI
F
/dt (A/μs)
Fig. 7 - Typical Stored Charge vs. dI
F
/dt
Note
(1)
Formula used: T = T - (Pd + Pd
C
J
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 5);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= rated V
R
Revision: 25-Nov-14
Document Number: 94983
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
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VS-6ESH02HM3
www.vishay.com
(3)
Vishay Semiconductors
t
rr
t
a
t
b
I
F
0
Q
rr
(2)
(4)
I
RRM
0.5 I
RRM
dI
(rec)M
/dt
(5)
0.75 I
RRM
(1)
dI
F
/dt
(1) dI
F
/dt - rate of change of current
through zero crossing
(2) I
RRM
- peak reverse recovery current
(3) t
rr
- reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current.
(4)
Q
rr
- area under curve defined by t
rr
and I
RRM
Q
rr
=
t
rr
x I
RRM
2
(5) dI
(rec)M
/dt - peak rate of change of
current during t
b
portion of t
rr
Fig. 8 - Reverse Recovery Waveform and Definitions
ORDERING INFORMATION TABLE
Device code
VS-
1
1
2
3
4
5
6
7
8
-
-
-
6
2
E
3
S
4
H
5
02
6
H
7
M3
8
Vishay Semiconductors product
Current rating (6 = 6 A)
Circuit configuration:
E = single diode
-
-
-
-
-
S = SMPC package
Process type,
H = hyperfast recovery
Voltage code (02 = 200 V)
H = AEC-Q101 qualified
M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
ORDERING INFORMATION
(Example)
PREFERRED P/N
VS-6ESH02HM3/86A
VS-6ESH02HM3/87A
QUANTITY PER REEL
1500
6500
MINIMUM ORDER QUANTITY
1500
6500
PACKAGING DESCRIPTION
7" diameter plastic tape and reel
13" diameter plastic tape and reel
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
Packaging information
www.vishay.com/doc?95570
www.vishay.com/doc?95565
www.vishay.com/doc?88869
Revision: 25-Nov-14
Document Number: 94983
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Outline Dimensions
www.vishay.com
Vishay Semiconductors
TO-277A (SMPC)
DIMENSIONS
in inches (millimeters)
0.187 (4.75)
0.175 (4.45)
K
0.016 (0.40)
0.006 (0.15)
0.262 (6.65)
0.250 (6.35)
0.242 (6.15)
0.238 (6.05)
2
1
0.171 (4.35)
0.167 (4.25)
0.146 (3.70)
0.134 (3.40)
0.087 (2.20)
0.075 (1.90)
0.047 (1.20)
0.039 (1.00)
Mounting Pad Layout
0.189 (4.80)
MIN.
0.189 (4.80)
0.173 (4.40)
0.155 (3.94)
NOM.
0.030 (0.75) NOM.
0.268
(6.80)
0.186 (4.72)
MIN.
0.049 (1.24)
0.037 (0.94)
0.084 (2.13) NOM.
0.053 (1.35)
0.041 (1.05)
Conform to JEDEC
®
TO-277A
0.050 (1.27)
MIN.
0.041
(1.04)
0.055 (1.40)
MIN.
Revision: 03-Sep-14
Document Number: 95570
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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