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MBR2045CT-Y

Description
Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 45V V(RRM), Silicon, TO-220AB,
CategoryDiscrete semiconductor    diode   
File Size203KB,3 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
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MBR2045CT-Y Overview

Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 45V V(RRM), Silicon, TO-220AB,

MBR2035CT-Y thru MBR20200CT-Y
Taiwan Semiconductor
CREAT BY ART
FEATURES
- Low power loss, high efficiency
- Guardring for overvoltage protection
- High surge current capability
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
Dual Common Cathode Schottky Rectifier
TO-220AB
MECHANICAL DATA
Case:TO-220AB
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free, RoHS compliant
Terminal:Matte
tin plated leads, solderable per JESD22-B106
Meet JESD 201 class 1A whisker test
Polarity:As
marked
Mounting torque:5
in-lbs maximum
Weight:1.88
gram (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERSTICS
(T
A
=25℃ unless otherwise noted)
MBR
PARAMETER
SYMBOL
2035
CT-Y
Marking code
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20KHz)
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Peak Repetitive Reverse Surge Current (Note 1)
Maximum Instantaneous Forward Voltage (Note 2)
IF=10A, TA=25℃
IF=10A, TA=125℃
IF=20A, TA=25℃
IF=20A, TA=125℃
Maximum reverse current @ rated VR
Voltage rate of change (Rated V
R
)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: tp = 2.0
μs,
1.0KHz
Note 2:Pulse test with PW=300u sec, 1% duty cycle
T
A
=25
T
A
=125
V
RRM
V
RMS
V
DC
I
F(AV)
I
FRM
I
FSM
I
RRM
1
-
V
F
0.57
0.84
0.72
I
R
dV/dt
R
θJC
T
J
T
STG
1.0
- 55 to + 150
- 55 to + 150
15
0.80
0.70
0.95
0.85
0.1
10
10000
2.0
5
0.15
MBR
2035
CT
35
24
35
MBR
2045
CT-Y
MBR
2045
CT
45
31
45
MBR
2050
CT-Y
MBR
2050
CT
50
35
50
MBR
2060
CT-Y
MBR
2060
CT
60
42
60
20
20
150
0.5
0.85
0.75
0.95
0.85
0.99
0.87
1.23
1.10
mA
V/us
O
MBR
2090
CT-Y
MBR
2090
CT
90
63
90
MBR
CT-Y
MBR
20100
CT
100
70
100
MBR
CT-Y
MBR
20150
CT
150
105
150
MBR
UNIT
CT-Y
MBR
20200
CT
200
140
200
V
V
V
A
A
A
A
20100 20150 20200
V
C/W
O
O
C
C
Document Number:DS_D1308023
Version:A13

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Description Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 45V V(RRM), Silicon, TO-220AB, Dual Common Cathode Schottky Rectifier Dual Common Cathode Schottky Rectifier Dual Common Cathode Schottky Rectifier

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