BAS316WS
Taiwan Semiconductor
Small Signal Product
200mW High-Speed Switching SMD Diode
FEATURES
- Fast switching device (trr<4.0ns)
- Surface mount device type
- Moisture sensitivity level 1
- Matte Tin (Sn) lead finish
- Pb free version and RoHS compliant
- Packing code with suffix "G" means
green compound (halogen-free)
SOD-323F
MECHANICAL DATA
- Case: Flat lead SOD-323F small outline plastic package
- Terminal: Matte tin plated, lead free., solderable
per MIL-STD-202, Method 208 guaranteed
- High temperature soldering guaranteed : 260°C/10s
- Polarity: Indicated by cathode band
- Weight: 4.6 ± 0.5 mg
- Marking Code: W2
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
PARAMETER
Power Dissipation
Average Forward Current
Non-Repetitive Peak Forward Surge Current
Operating Junction Temperature
Storage Temperature Range
PARAMETER
Reverse Breakdown Voltage
I
R
= 100
μA
I
F
= 1.0 mA
Forward Voltage
I
F
= 10 mA
I
F
= 50 mA
I
F
= 150 mA
Reverse Leakage Voltage
Junction Capacitance
Reverse Recovery Time
V
R
= 75 V
V
R
= 25 V
V
R
= 0 , f = 1.0 MHz
I
F
= I
R
= 10 mA , I
rr
= 0.1 × I
R
I
R
C
J
t
rr
V
F
Pulse Width = 1
μs
Pulse Width = 1 ms
SYMBOL
P
D
I
O
I
FRM
T
J
T
STG
SYMBOL
V
(BR)
MIN
100
-
-
-
-
-
-
-
VALUE
200
250
4.0
1.0
150
-65 to + 150
MAX
-
0.715
0.855
1.000
1.250
1
0.03
1.5
4.0
μA
pF
ns
V
UNIT
mW
mA
A
o
o
C
C
UNIT
V
Document Number: DS_S1501001
Version: B15
BAS316WS
Taiwan Semiconductor
Small Signal Product
RATINGS AND CHARACTERISTICS CURVES
(T
A
=25°C unless otherwise noted)
Fig. 2 Reverse Current As A Function of
Junction Temperature
100
V
R
=75V
10
V
R
=75V
Fig. 1 Typical Forward Characteristics
300
Instantaneous Forward Current (mA)
275
250
225
Reverse Current (μA)
200
175
150
125
100
75
50
25
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
Instantaneous Forward Voltage (V)
0.01
0
20
max
1
V
R
=25V
0.1
typ
typ
40
60
80
100
120
140
160
180
200
Junction Temperature (
o
C)
Fig. 3 Admissible Power Dissipation Curve
250
200
Power Dissipation (mW)
150
100
50
0
0
25
50
75
100
125
150
175
Ambient Temperature (°C)
0.8
Fig. 4 Typical Junction Capacitance
Junction Capacitance (pF)
0.6
0.4
0.2
0
0
2
4
6
8
10
12
14
16
Reverse Voltage (V)
Document Number: DS_S1501001
Version: B15
BAS316WS
Taiwan Semiconductor
Small Signal Product
ORDER INFORMATION (EXAMPLE)
BAS316WS RRG
Green compound code
Packing code
Part no.
DIMENSIONS
SOD-323F
DIM.
A
B
C
D
E
F
Unit (mm)
Min
1.15
2.30
0.25
1.60
0.80
0.05
Max
1.35
2.80
0.40
1.80
1.10
0.25
Unit (inch)
Min
0.045
0.091
0.010
0.063
0.031
0.002
Max
0.053
0.110
0.016
0.071
0.043
0.010
SUGGESTED PAD LAYOUT
Unit (mm)
Typ.
0.710
2.900
0.403
Unit (inch)
Typ.
0.028
0.114
0.016
DIM.
X
X1
Y
Note: 1. The suggested land pattern dimensions have been provided for refernece only, as actual pad layouts may vary depending on application.
Document Number: DS_S1501001
Version: B15
BAS316WS
Taiwan Semiconductor
Small Signal Product
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied,to
any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or seling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
Document Number: DS_S1501001
Version: B15
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