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BAT42-L0R0G

Description
Hermetically Sealed Glass Fast Switching Schottky Barrier Diode
CategoryDiscrete semiconductor    diode   
File Size187KB,4 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
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BAT42-L0R0G Overview

Hermetically Sealed Glass Fast Switching Schottky Barrier Diode

BAT42-L0R0G Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionO-LALF-W2
Reach Compliance Codecompli
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JEDEC-95 codeDO-35
JESD-30 codeO-LALF-W2
JESD-609 codee3
Number of components1
Number of terminals2
Maximum operating temperature125 °C
Minimum operating temperature-65 °C
Maximum output current0.2 A
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Maximum power dissipation0.2 W
Maximum repetitive peak reverse voltage30 V
Maximum reverse recovery time0.005 µs
surface mountNO
technologySCHOTTKY
Terminal surfaceTin (Sn)
Terminal formWIRE
Terminal locationAXIAL
Base Number Matches1
BAT42 / BAT43
Taiwan Semiconductor
Small Signal Product
Hermetically Sealed Glass Fast Switching Schottky Barrier Diode
FEATURES
- Low forward voltage drop
- Through-hole device type mounting
- Hermetically sealed glasss
- Compression bonded construction
- Solder hot dip tin (Sn) lead finish
- All external surfaces are corrosion resistant and
leads are readily solderable
DO-35
Hermetically Sealed Glass
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25℃ unless otherwise noted)
PARAMETER
Power Dissipation
Repetitive Peak Reverse Voltage
Maximum DC Blocking Voltage
Average Forward Rectified Current
Peak Forward Surge Current
Operating and Storage Temperature Range
PARAMETER
Breakdown Voltage
BAT42
Forward Voltage Drop All Types
BAT43
Maximum Peak Reverse Current
Junction Capacitance
V
R
=1V,
I
R
=100μA
I
F
=200mA
I
F
=10mA
I
F
=50mA
I
F
=200mA
I
F
=2mA
I
F
=15mA
V
R
=25V
f=1.0MHz
I
R
C
J
V
F
SYMBOL
P
D
V
RRM
V
R
I
F(AV)
I
FSM
T
J ,
T
STG
SYMBOL
B
V
MIN
30
-
-
-
-
0.26
-
500
7 (Typ)
5 (Typ)
VALUE
200
30
30
200
4
-65 to +125
MAX
-
1.00
0.40
0.65
1.00
0.33
0.45
nA
pF
ns
V
UNIT
mW
V
V
mA
A
o
C
UNIT
V
t
rr
(Note 1)
Reverse Recovery Time
Note 1: Reverse recovery test conditions: I
F
=I
R
=10mA, I
RR
=1mA, R
L
=100Ω
Document Number: DS_S1412008
Version: C14

BAT42-L0R0G Related Products

BAT42-L0R0G BAT42R0G BAT42_14
Description Hermetically Sealed Glass Fast Switching Schottky Barrier Diode Hermetically Sealed Glass Fast Switching Schottky Barrier Diode Hermetically Sealed Glass Fast Switching Schottky Barrier Diode
Is it Rohs certified? conform to conform to -
package instruction O-LALF-W2 O-LALF-W2 -
Reach Compliance Code compli compli -
ECCN code EAR99 EAR99 -
Shell connection ISOLATED ISOLATED -
Configuration SINGLE SINGLE -
Diode component materials SILICON SILICON -
Diode type RECTIFIER DIODE RECTIFIER DIODE -
JEDEC-95 code DO-35 DO-35 -
JESD-30 code O-LALF-W2 O-LALF-W2 -
JESD-609 code e3 e3 -
Number of components 1 1 -
Number of terminals 2 2 -
Maximum operating temperature 125 °C 125 °C -
Minimum operating temperature -65 °C -65 °C -
Maximum output current 0.2 A 0.2 A -
Package body material GLASS GLASS -
Package shape ROUND ROUND -
Package form LONG FORM LONG FORM -
Maximum power dissipation 0.2 W 0.2 W -
Maximum repetitive peak reverse voltage 30 V 30 V -
Maximum reverse recovery time 0.005 µs 0.005 µs -
surface mount NO NO -
technology SCHOTTKY SCHOTTKY -
Terminal surface Tin (Sn) Matte Tin (Sn) -
Terminal form WIRE WIRE -
Terminal location AXIAL AXIAL -
Base Number Matches 1 1 -
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