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BAT54BR

Description
0.2 A, 30 V, 3 ELEMENT, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size146KB,5 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
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BAT54BR Overview

0.2 A, 30 V, 3 ELEMENT, SILICON, SIGNAL DIODE

BAT54T/AD/CD/SD/BR
Taiwan Semiconductor
Small Signal Product
200mW Surface Mount Schottky Barrier Diode
FEATURES
- Fast switching speed
- Low forward voltage drop
- Surface mount device type
- Moisture sensitivity level 1
- Matte Tin (Sn) lead finish with Nickel (Ni) underplate
- Pb free and RoHS compliant
- Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
SOT-363
MECHANICAL DATA
- Case: SOT-363 small outline plastic package
- Terminal: Matte tin plated, lead free,
solderable per MIL-STD-202, Method 208 guaranteed
- High temperature soldering guaranteed: 260°C/10s
- Polarity: Indicated by cathode band
- Weight: 0.006 gram (approximately)
- Marking Code: KLA, KL6, KL7, KL8, KLB
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25℃ unless otherwise noted)
PARAMETER
Peak Repetitive Peak Reverse Voltage
Working Peak Reverse Voltage
DC Reverse Voltage
Forward Continuous Current
Repetitive Peak Forward Current
Forward Surge Current @ t < 1.0 s
Power Dissipation
Thermal Resistance, Junction to Ambient Air
Operating and Storage temperature
PARAMETER
Reverse Breakdown Voltage
I
R
=100µA
I
F
=1mA
Forward Voltage
I
F
=10mA
I
F
=30mA
I
F
=100mA
Reverse Current
Total Capacitance
Reverse Recovery Time
V
R
=25V
V
R
=1V, f=1.0MHz
I
F
=I
R
=10mA, R
L
=100Ω, I
RR
=1mA
I
R
C
T
t
rr
V
F
SYMBOL
V
RRM
V
RWM
V
R
I
F
I
FRM
I
FSM
P
D
R
θJA
T
j
, T
STG
SYMBOL
V
(BR)
MIN
30
--
--
--
--
--
--
--
200
300
600
200
625
-55 to 125
MAX
--
0.32
0.40
0.50
1.00
2.0
10
5.0
µA
pF
nS
V
mA
mA
mA
mW
°C/W
o
VALUE
30
UNIT
V
C
UNIT
V
Document Number: DS_S1404008
Version: E14

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