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BAV99SRFG

Description
250mW High Speed Switching Array
File Size213KB,4 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
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BAV99SRFG Overview

250mW High Speed Switching Array

BAV99S
Taiwan Semiconductor
Small Signal Product
250mW High Speed Switching Array
FEATURES
- Fast switching speed
- High reverse breakdown voltage rating
- Moisture sensitivity level 1
- Matte Tin (Sn) lead finish with Nickel (Ni) underplate
- Pb free version and RoHS compliant
- Packing code with suffix "G" means
green compound (halogen-free)
SOT-363
MECHANICAL DATA
- Case: SOT-363 small outline plastic package
- Terminal: Matte tin plated, lead free., solderable
per MIL-STD-202, Method 208 guaranteed
- High temperature soldering guaranteed : 260°C/10s
- Case material UL flammability rating 94V-0
- Weight: 8 ± 0.5 mg
- Marking Code: K1
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
PARAMETER
Power Dissipation
Repetitive Peak Reverse Voltage
Repetitive Peak Forward Current
Mean Forward Current
Non-Repetitive Peak Forward
Surge Current
Junction and Storage Temperature Range
PARAMETER
Reverse Breakdown Voltage
I
R
=2.5μA
I
F
=1.0mA
I
F
=10mA
Forward Voltage
I
F
=50mA
I
F
=100mA
I
F
=150mA
Reverse Leakage Current
Junction Capacitance
Reverse Recovery Time
@V
R
=75V
V
R
=0, f=1.0MHz
(Note 1)
I
R
C
J
t
rr
V
F
Pulse width = 1
μs
Pulse width = 1 s
SYMBOL
P
D
V
RRM
I
FRM
I
O
I
FSM
T
J
, T
STG
SYMBOL
V
(BR)
MIN
75
-
-
-
-
-
-
-
-
VALUE
200
85
450
150
4.5
0.5
-55 to 150
MAX
-
0.715
0.855
1.000
1.200
1.250
1.000
1.500
6.000
μA
pF
ns
V
UNIT
mW
V
mA
mA
A
o
C
UNIT
V
Note 1 : Reverse recovery test conditions : I
F
=I
R
=10mA, R
L
=100Ω
Document Number: DS_S1501006
Version: G15

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