1SS133M
Taiwan Semiconductor
Small Signal Product
300mW, Hermetically Sealed Glass Switching Diodes
FEATURES
- Fast switching device (t
rr
< 4.0 ns)
- Through-hole mount device type
- DO-34 package (JEDEC DO-204)
- Hermetically sealed glass
- Compression bonded construction
- All external surfaces are corrosion resistant
and leads are readily solderable
- RoHS compliant
- Solder hot dip Tin (Sn) lead finish
- Cathode indicated by polarity band
- Marking code: 133
DO-34
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
PARAMETER
Power Dissipation
Working Inverse Voltage
Average Rectified Current
Non-Repetitive Peak Forward Current
Peak Forward Surge Current
Operating Junction Temperature
Storage Temperature Range
SYMBOL
P
D
W
IV
I
O
I
FM
I
FSURGE
T
J
T
STG
VALUE
300
90
150
450
2
+ 175
-65 to +200
UNIT
mW
V
mA
mA
A
o
o
C
C
PARAMETER
Breakdown Voltage
Forward Voltage
Reverse Leakage Current
Junction Capacitance
Reverse Recovery Time
I
R
=500nA
I
F
=100mA
V
R
=80V
V
R
=0, f=1.0MHz
(Note 1)
SYMBOL
B
V
V
F
I
R
C
j
t
rr
MIN
80
MAX
--
1.2
500
UNIT
V
V
nA
pF
ns
--
--
4.0
4.0
Notes: 1. Reverse Recovery Test Conditions: I
F
=I
R
=10mA, R
L
=100Ω, I
RR
=1mA
Document Number: DS_S1403003
Version: C15
1SS133M
Taiwan Semiconductor
Small Signal Product
RATINGS AND CHARACTERISTICS CURVES
(T
A
=25°C unless otherwise noted)
Fig. 1 Forward Characteristics
100
10000
Fig. 2 Reverse Characteristics
T
A
=100
o
C
Reverse Current : I
R
(nA)
Forward Current : I
F
(mA)
1000
10
T
A
=75
o
C
T
A
=50
o
C
1
T
A
=125
o
C
T
A
=75
o
C
T
A
=25
o
C
T
A
=-25
o
C
100
10
T
A
=25
o
C
0.1
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
Forward Voltage : V
F
(V)
1
0
20
40
60
80
100
120
Reverse Voltage : V
R
(V)
Fig. 3 Capacitance Between Terminals Characteristics
3.0
Capacitance Between Terminals :
C
T
(pF)
2.5
2.0
1.5
1.0
0.5
0.0
0
5
10
15
20
25
30
Reverse Voltage : V
R
(V)
f = 1 MHz
4
Reverse Recovery Time :
tr (ns)
3
2
1
0
0
5
Fig. 4 Reverse Recovery Time Characteristics
V
R
= 6 V
I
rr
= 1/10 I
R
4
8
12
16
20
Forward Current : I
F
(mA)
Fig. 5 Surge Current Characteristics
100
Fig. 6 Reverse Recovery Time ( trr )
Measurement Circuit
Surge Current : I
SURGE
(A)
10
1
0.1
1
10
100
1000
10000
Pulse Width : Tw (ms)
Document Number: DS_S1403003
Version: C15
1SS133M
Taiwan Semiconductor
Small Signal Product
ORDER INFORMATION (EXAMPLE)
1SS133M R0G
Green compound code
Packing code
Part no.
PACKAGE OUTLINE DIMENSIONS
Unit(mm)
Min
0.30
2.16
25.40
1.27
Max
0.55
3.04
38.10
2.00
Unit(inch)
Min
0.012
0.085
1.000
0.050
Max
0.022
0.120
1.500
0.079
DIM.
A
B
C
D
Document Number: DS_S1403003
Version: C15
1SS133M
Taiwan Semiconductor
Small Signal Product
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied,to
any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or seling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
Document Number: DS_S1403003
Version: C15
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