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SB1H100

Description
1 A, 100 V, SILICON, SIGNAL DIODE, DO-204AL
CategoryDiscrete semiconductor    diode   
File Size72KB,4 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet Parametric Compare View All

SB1H100 Overview

1 A, 100 V, SILICON, SIGNAL DIODE, DO-204AL

SB1H100 Parametric

Parameter NameAttribute value
MakerVishay
Reach Compliance Codeunknow
ECCN codeEAR99
Is SamacsysN
ConfigurationSINGLE
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.62 V
Maximum non-repetitive peak forward current50 A
Number of components1
Maximum operating temperature175 °C
Maximum output current1 A
Maximum repetitive peak reverse voltage100 V
surface mountNO
technologySCHOTTKY
Base Number Matches1
SB1H90, SB1H100
www.vishay.com
Vishay General Semiconductor
High Voltage Schottky Plastic Rectifier
High Barrier Technology for Improved High Temperature Performance
FEATURES
• High barrier technology for improved high T
J
• Guardring for overvoltage protection
• Low power losses and high efficiency
• Low forward voltage drop
• Very low leakage current
• High forward surge capability
• High frequency operation
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
DO-204AL (DO-41)
TYPICAL APPLICATIONS
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
V
F
I
R
T
J
max.
Package
Diode variations
1.0 A
90 V, 100 V
50 A
0.62 V
1.0 μA
175 °C
DO-204AL
Single
For use in middle voltage high frequency inverters,
freewheeling, DC/DC converters, and polarity protection
applications.
MECHANICAL DATA
Case:
DO-204AL (DO-41)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals:
Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity:
Color band denotes the cathode end
per
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
Voltage rate of change (rated V
R
)
Peak repetitive reverse surge current at t
p
= 2.0 μs, 1 kHz
Maximum operating junction temperature
Storage temperature range
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
dV/dt
I
RRM
T
J
T
STG
SB1H90
90
63
90
1.0
50
10 000
1.0
175
- 55 to + 175
SB1H100
100
70
100
UNIT
V
V
V
A
A
V/μs
A
°C
°C
Revision: 13-Aug-13
Document Number: 88716
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

SB1H100 Related Products

SB1H100 SB1H90 SB1H90-E3
Description 1 A, 100 V, SILICON, SIGNAL DIODE, DO-204AL 1 A, 90 V, SILICON, SIGNAL DIODE, DO-204AL 1 A, 90 V, SILICON, SIGNAL DIODE, DO-204AL
Reach Compliance Code unknow unknow unknow
ECCN code EAR99 EAR99 EAR99
Configuration SINGLE SINGLE SINGLE
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Number of components 1 1 1
Maximum operating temperature 175 °C 175 °C 175 °C
Maximum output current 1 A 1 A 1 A
Maximum repetitive peak reverse voltage 100 V 90 V 90 V
surface mount NO NO NO
technology SCHOTTKY SCHOTTKY SCHOTTKY
Maker Vishay - Vishay
Is Samacsys N N -
Maximum forward voltage (VF) 0.62 V 0.62 V -
Maximum non-repetitive peak forward current 50 A 50 A -
Base Number Matches 1 1 -
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