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VB30100C

Description
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
File Size164KB,6 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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VB30100C Overview

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

New Product
V30100C, VF30100C, VB30100C & VI30100C
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low V
F
= 0.455 V at I
F
= 5 A
TMBS
TO-220AB
®
FEATURES
ITO-220AB
• Trench MOS Schottky technology
• Low forward voltage drop, low power
losses
• High efficiency operation
• Low thermal resistance
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s,
per JESD 22-B106 (for TO-220AB, ITO-220AB and
TO-262AA package)
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, dc-to-dc
converters and reverse battery protection.
1
2
3
2
V30100C
PIN 1
PIN 3
PIN 2
CASE
3
1
VF30100C
PIN 1
PIN 3
PIN 2
2
3
1
TO-263AB
K
K
TO-262AA
2
1
VB30100C
PIN 1
PIN 2
K
HEATSINK
MECHANICAL DATA
Case:
TO-220AB, ITO-220AB, TO-263AB and
TO-262AA
Molding compound meets UL 94 V-0 flammability
rating
Base P/N-E3 - RoHS compliant, commercial grade
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity:
As marked
Mounting Torque:
10 in-lbs maximum
VI30100C
PIN 1
PIN 3
PIN 2
K
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
V
F
at I
F
= 15 A
T
J
max.
2 x 15 A
100 V
160 A
0.63 V
150 °C
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load per diode
Non-repetitive avalanche energy
at T
J
= 25 °C, L = 60 mH per diode
Peak repetitive reverse current at t
p
= 2 µs, 1 kHz,
T
J
= 38 °C ± 2 °C per diode
Voltage rate of change (rated V
R
)
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min
Operating junction and storage temperature range
per device
per diode
SYMBOL
V
RRM
I
F(AV)
I
FSM
E
AS
I
RRM
dV/dt
V
AC
T
J
, T
STG
V30100C
VF30100C
VB30100C
VI30100C
UNIT
V
A
A
mJ
A
V/µs
V
°C
100
30
15
160
210
1.0
10 000
1500
- 40 to + 150
Document Number: 89010
Revision: 24-Jun-09
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1

VB30100C Related Products

VB30100C V30100C_15 VF30100C VI30100C
Description Dual High-Voltage Trench MOS Barrier Schottky Rectifier Dual High Voltage Trench MOS Barrier Schottky Rectifier Dual High-Voltage Trench MOS Barrier Schottky Rectifier Dual High-Voltage Trench MOS Barrier Schottky Rectifier

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