EGZ10DCF THRU EGZ10JCF
GLASS PASSIVATED JUNCTION HIGH EFFICIENT RECTIFIERS
Reverse Voltage - 200 to 600 Volts
Forward Current - 10 Amperes
ENTED
PAT
0.413(10.50)
0.374(9.50)
0.114(2.90)
0.098(2.50)
0.118(3.0)
MIN.
1
2
3
ITO-220AB
0.130(3.30)
0.091(2.30)
0.193(4.90)
0.165(4.20)
0.610(15.50)
0.571(14.50)
FEATURES
* GPRC (Glass Passivated Rectifier Chip) inside
* Glass passivated cavity-free junction
* Lead free product, compliance to RoHS
* Low forward voltage, high current capability
* Low leakage current
* High surge current capability
* Plastic Material-UL Recognition Flammability
Classification 94V-0
0.055(1.40)
0.039(1.00)
0.043(1.10)
0.019(0.50)
0.106(2.70)
0.087(2.20)
0.590(15.00)
0.488(12.40)
0.161(4.10)
MAX.
0.031(0.80)
0.016(0.40)
0.274(6.95)
0.226(5.75)
0.138(3.50)
MAX.
MECHANICAL DATA
1
2
3
Case :
JEDEC ITO-220AB molded plastic body
Terminals :
Plated Leads, solderable per
MIL-STD-750, Method 2026
Polarity :
Molded on body
TM
*Dimensions in inches and (millimeters)
Mounting Position :
Any
Weight :
2.24 grams(Approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature
unless otherwise specified.
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current See Fig. 1
Peak forward surge current 8.3ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage at I
F
= 5 A
Maximum DC reverse current
at rated DC blocking voltage
Maximum reverse recovery time (NOTE 1)
Typical junction capacitance (Note 2)
o
SYMBOLS
V
RRM
V
RMS
V
DC
I
(AV)
EGZ10DCF
200
140
200
EGZ10GCF
400
280
400
EGZ10JCF
600
420
600
UNITS
Volts
Volts
Volts
Amps
10
I
FSM
125
Amps
V
F
1.00
1.25
1.70
Volts
@T
A
=25℃
I
R
trr
C
J
T
J
,T
STG
5
uA
nS
pF
℃
50
65
75
Operating junction and storage temperature range
-65 to +175
Note : 1.
Reverse recovery test condition : IF 0.5A, IR=1.0A, Irr=0.25A
2. Measured at 1.0MHz and applied reverse voltage of 4.0V.
3. Preliminary draft.
Zowie Technology Corporation
REV. 2
RATINGS AND CHARACTERISTIC CURVES EGZ10DCF THRU EGZ10JCF
FIG.1 - FORWARD CURRENT DERATING CURVE
12.5
PEAK FORWARD SURGE CURRENT,
AMPERES
150
FIG.2 - MAXIMUM NON-REPETITIVE
PEAK FORWARD SURGE CURRENT
8.3ms SINGLE HALF SINE-WAVE
AVERAGE FORWARD RECTIFIED
CURRENT, AMPERES
10
125
100
7.5
75
5.0
50
2.5
25
0
0
25
50
75
100
125
150
175
CASE TEMPERATURE,
℃
0
1
10
NUMBER OF CYCLES AT 60Hz
100
FIG.3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
50
IINSTANTANEOUS FORWARD CURRENT,
AMPERES
1000
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
10
IR, REVERSE CURRENT(uA)
EGZ10DCF
100
EGZ10JCF
10
T
J
= 125℃
EGZ10GCF
1.0
T
J
= 100℃
1.0
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0.1
0
20
40
T
J
= 25℃
60
80
100
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
PERCENT OF RATED PEAK REVERSE VOLTAGE, %
FIG.5 - TYPICAL JUNCTION CAPACITANCE
1000
JUNCTION CAPACITANCE, pF
T
J
= 25℃
100
10
.1
.2
.4
1.0
2
4
10
20
40
100
REVERSE VOLTAGE, VOLTS
REV. 2
Zowie Technology Corporation
Microchip MCU
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