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P4KE100CA

Description
400 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-41
CategoryDiscrete semiconductor    diode   
File Size81KB,3 Pages
ManufacturerZOWIE Technology Corporation
Websitehttp://www.zowie.com.tw/
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P4KE100CA Overview

400 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-41

P4KE100CA Parametric

Parameter NameAttribute value
MakerZOWIE Technology Corporation
Reach Compliance Codeunknow
ECCN codeEAR99
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
P4KE SERIES
GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR
Breakdown Voltage - 6.8 to
600
Volts
Peak Pulse Power - 400 Watts
DO-204AL (DO-41)
FEATURES
* Glass passivated chip
* 600 W peak pulse power capability with a 10/1000
µs
wavefrom,
repetitive rate (duty cycle) : 0.01%
1.0(25.4)
MIN.
* Low leakage
* Excellent clamping capability
* Very fast response time
0.107(2.70)
0.080(2.00)
DIA.
0.205(5.20)
0.160(4.10)
1.0(25.4)
MIN.
MECHANICAL DATA
Case :
JEDEC DO-41 molded plastic
Terminals :
Plated axial leads , solderable per MIL-STD-750,
Method 2026
Polarity :
Color band denotes positive end (cathode) except
0.034(0.86)
0.028(0.71)
DIA.
*Dimensions in inches and (millimeters)
for bidirectional types
Weight :
0.012 ounes , 0.3 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
single phase, half wave, 60Hz resistive or inductive load.
for capacitive load, derate current by 20%
o
RATING
SYMBOL
VALUE
UNITS
Peak power dissipation with a 10/1000
µs
waveform (note 1)
Peak pulse current with a 10/1000
µs
waveform (note 1)
P
PPM
400
Watts
I
PPM
See next table
Amps
Power dissipation on infinite heatsink at T
L
= 75℃
P
D
1
Watts
Peak forward surge current,8.3ms single half sine-wave unidirectional only (note 2)
I
FSM
40
Amps
Operating junction and storage temperature range
NOTES : (1) Non-repetitive current pulse per Fig. 5 and derated abobe T
A
= 25℃
per Fig. 1
(2) Measured on 8.3ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum.
T
J
,T
STG
-55 to +150
2011/05
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