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DF02

Description
1 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size62KB,2 Pages
ManufacturerZOWIE Technology Corporation
Websitehttp://www.zowie.com.tw/
Download Datasheet Parametric Compare View All

DF02 Overview

1 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE

DF02 Parametric

Parameter NameAttribute value
MakerZOWIE Technology Corporation
Reach Compliance Codeunknow
ConfigurationBRIDGE, 4 ELEMENTS
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)1.1 V
Maximum non-repetitive peak forward current50 A
Number of components4
Maximum operating temperature175 °C
Maximum output current1 A
Maximum repetitive peak reverse voltage200 V
surface mountNO
DF02 THRU DF10
GLASS PASSIVATED BRIDGE RECTIFIER
Reverse Voltage - 200 to 1000 Volts
Forward Current - 1.0 Ampere
DFM
FEATURES
-
.031(0.8)
.024(0.6)
~
~
+
.256(6.50)
.244(6.20)
* Glass passivated chip junctions
* Low Forward Voltage Drop, High Current Capability
* High Surge Current Capability
* Designed for Surface Mount Application
.323(8.20)
.315(8.00)
.102(2.60)
.087(2.20)
.079(2.00)
.059(1.50)
.193(4.9)
.165(4.2)
.205(5.2)
.197(5.0)
.335(8.50)
.307(7.80)
* Plastic Material-UL Recognition Flammability
Classification 94V-0
.022(0.55)
.018(0.45)
.350(8.9)
.311(7.9)
MECHANICAL DATA
*Dimensions in inches and (millimeters)
Case :
Molded Plastic
Terminals :
Tin Plated, solderable per
MIL-STD-750, Method 2026
Polarity :
As marked on Case
Weight :
0.38 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature
unless otherwise specified.
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current @ T
A
=40 C
o
o
SYMBOLS
V
RRM
V
RMS
V
DC
I
(AV)
DF02
200
140
200
DF04
400
280
400
DF06
600
420
600
DF08
800
560
800
DF10
1000
700
1000
UNITS
Volts
Volts
Volts
Amps
1.0
Peak forward surge current 8.3ms single half sine-wave
superimposed on rated load (JEDEC Method)
Maximum instantaneous forward voltage @ I
F
=1.0 A
Maximum DC reverse current
at rated DC blocking voltage
I
2
t rating for fusing ( t < 8.3ms )
Typical junction capacitance per element (NOTE 1)
Typical thermal resistance, junction to ambient (NOTE 2)
Operating junction and storage temperature range
@T
C
=25 C
@T
C
=125 C
o
o
I
FSM
30
Amps
V
F
1.1
5
Volts
I
R
I
2
t
C
J
R
JA
500
10.4
25
40
-65 to +175
o
uA
2
A s
pF
C/W
o
T
J
,T
STG
C
NOTES : (1) Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.
(2) Thermal resistance from junction to ambient mounted on P.C.B. with 0.5 x 0.5" ( 13 x 13mm ) copper pads.
REV. 1
Zowie Technology Corporation

DF02 Related Products

DF02 DF04 DF06 DF08 DF10
Description 1 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE 1 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE 1 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE 1 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE 1 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE
Maker ZOWIE Technology Corporation ZOWIE Technology Corporation ZOWIE Technology Corporation ZOWIE Technology Corporation ZOWIE Technology Corporation
Reach Compliance Code unknow unknow unknow unknow unknown
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF) 1.1 V 1.1 V 1.1 V 1.1 V 1.1 V
Maximum non-repetitive peak forward current 50 A 50 A 50 A 50 A 50 A
Number of components 4 4 4 4 4
Maximum operating temperature 175 °C 175 °C 175 °C 175 °C 175 °C
Maximum output current 1 A 1 A 1 A 1 A 1 A
Maximum repetitive peak reverse voltage 200 V 400 V 600 V 800 V 1000 V
surface mount NO NO NO NO NO
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