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DF10SH

Description
1 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size44KB,2 Pages
ManufacturerZOWIE Technology Corporation
Websitehttp://www.zowie.com.tw/
Download Datasheet Parametric Compare View All

DF10SH Overview

1 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE

DF10SH Parametric

Parameter NameAttribute value
MakerZOWIE Technology Corporation
Reach Compliance Codeunknow
ECCN codeEAR99
DF02SH THRU DF10SH
SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER
Reverse Voltage - 200 to 1000 Volts
Forward Current - 1.0 Ampere
DFS
FEATURES
* Halogen-free type
0.335(8.50)
0.307(7.80)
0.406(10.30)
0.394(10.00)
0.268(6.5)
0.244(6.2)
.031(0.8)
.024(0.6)
* Compliance to RoHS product
* Glass passivated chip junctions
* Low Forward Voltage Drop, High Current Capability
0.037(0.95)
0.323(8.20)
0.315(8.00)
0.102(2.60)
0.087(2.20)
0.204(5.20)
0.197(5.00)
0.063(1.60)
0.055(1.40)
0.014(0.35)
0.008(0.20)
0.047(1.20)
* High Surge Current Capability
* Designed for Surface Mount Application
4
1
* Plastic Material-UL Recognition Flammability
Classification 94V-0
3
2
MECHANICAL DATA
*Dimensions in inches and (millimeters)
Case : Molded Plastic
Terminals : Tin Plated, solderable per
MIL-STD-750, Method 2026
Polarity : As marked on Case
Weight : 0.38 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature
unless otherwise specified.
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current @ T
A
=40 C
o
o
SYMBOLS
V
RRM
V
RMS
V
DC
I
(AV)
DF02SH
200
140
200
DF04SH
400
280
400
DF06SH
600
420
600
DF08SH
800
560
800
DF10SH
1000
700
1000
UNITS
Volts
Volts
Volts
Amps
1.0
Peak forward surge current 8.3ms single half sine-wave
superimposed on rated load (JEDEC Method)
Maximum instantaneous forward voltage @ I
F
=1.0 A
Maximum DC reverse current
at rated DC blocking voltage
I
2
t rating for fusing ( t < 8.3ms )
Typical junction capacitance per element (NOTE 1)
Typical thermal resistance, junction to ambient (NOTE 2)
Operating junction and storage temperature range
@T
C
=25 C
@T
C
=125 C
o
o
I
FSM
30
Amps
V
F
1.1
5
Volts
I
R
I
2
t
C
J
R
JA
500
10.4
25
40
-55 to +150
o
uA
2
A s
pF
C/W
o
T
J
,T
STG
C
NOTES : (1) Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.
(2) Thermal resistance, junction to ambient, measured on PC board with 5.0mm
2
(0.03mm thick) land areas.
REV. 1
Zowie Technology Corporation

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DF10SH DF02SH DF04SH DF06SH
Description 1 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE 1 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE 1 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE 1 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE
Maker ZOWIE Technology Corporation ZOWIE Technology Corporation ZOWIE Technology Corporation ZOWIE Technology Corporation
Reach Compliance Code unknow unknow unknow unknow
ECCN code EAR99 EAR99 EAR99 EAR99
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