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DF1504S

Description
1.5 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size48KB,2 Pages
ManufacturerZOWIE Technology Corporation
Websitehttp://www.zowie.com.tw/
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DF1504S Overview

1.5 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE

DF1504S Parametric

Parameter NameAttribute value
MakerZOWIE Technology Corporation
Reach Compliance Codeunknow
ConfigurationBRIDGE, 4 ELEMENTS
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)1.1 V
Maximum non-repetitive peak forward current50 A
Number of components4
Maximum operating temperature175 °C
Maximum output current1.5 A
Maximum repetitive peak reverse voltage400 V
surface mountYES
DF1502S THRU DF1510S
SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER
Reverse Voltage - 200 to 1000 Volts
Forward Current - 1.5 Amperes
DFS
FEATURES
0.335(8.50)
0.307(7.80)
0.406(10.30)
.031(0.8)
.024(0.6)
0.394(10.00)
0.268(6.5)
0.244(6.2)
* Glass passivated chip junctions
* Low Forward Voltage Drop, High Current Capability
* High Surge Current Capability
* Designed for Surface Mount Application
* Plastic Material-UL Recognition Flammability
0.037(0.95)
0.323(8.20)
0.315(8.00)
0.102(2.60)
0.087(2.20)
0.204(5.20)
0.197(5.00)
0.063(1.60)
0.055(1.40)
0.014(0.35)
0.008(0.20)
0.047(1.20)
4
1
Classification 94V-0
3
2
MECHANICAL DATA
Case :
Molded Plastic
Terminals :
Tin Plated, solderable per
MIL-STD-750, Method 2026
Polarity :
As marked on Case
*Dimensions in inches and (millimeters)
Weight :
0.38 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature
unless otherwise specified.
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current @ T
A
=40 C
o
o
SYMBOLS
V
RRM
V
RMS
V
DC
I
(AV)
DF1502S
200
140
200
DF1504S
400
280
400
DF1506S
600
420
600
DF1508S
800
560
800
DF1510S
1000
700
1000
UNITS
Volts
Volts
Volts
Amps
1.5
Peak forward surge current 8.3ms single half sine-wave
superimposed on rated load (JEDEC Method)
I
FSM
50
Amps
Maximum instantaneous forward voltage @ I
F
=1.5 A
o
V
F
1.1
Volts
Maximum DC reverse current
at rated DC blocking voltage
@T
C
=25 C
@T
C
=125 C
o
5
I
R
500
25
40
-55 to +150
o
uA
Typical junction capacitance per element (NOTE 1)
Typical thermal resistance, junction to ambient (NOTE 2)
Operating junction and storage temperature range
C
J
R
JA
pF
C/W
o
T
J
,T
STG
C
NOTES : (1) Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.
(2) Thermal resistance from junction to ambient measured on P.C.B. with 5.0*0.5" (13*13mm) copper pads.
REV. 1
Zowie Technology Corporation

DF1504S Related Products

DF1504S DF1502S DF1506S DF1510S
Description 1.5 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE 1.5 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE 1.5 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE 1.5 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE
Maker ZOWIE Technology Corporation ZOWIE Technology Corporation ZOWIE Technology Corporation -
Reach Compliance Code unknow unknow unknow -
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS -
Diode type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE -
Maximum forward voltage (VF) 1.1 V 1.1 V 1.1 V -
Maximum non-repetitive peak forward current 50 A 50 A 50 A -
Number of components 4 4 4 -
Maximum operating temperature 175 °C 175 °C 175 °C -
Maximum output current 1.5 A 1.5 A 1.5 A -
Maximum repetitive peak reverse voltage 400 V 200 V 600 V -
surface mount YES YES YES -

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