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MBRB10100CT-E3

Description
5 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB
Categorysemiconductor    Discrete semiconductor   
File Size696KB,6 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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MBRB10100CT-E3 Overview

5 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB

MBR10xxx-E3, MBRF10xxx-E3, MBRB10xxx-E3
www.vishay.com
Vishay General Semiconductor
High Voltage Trench MOS Barrier Schottky Rectifier
TMBS
®
TO-220AC
ITO-220AC
FEATURES
• Trench MOS Schottky technology
• Lower power losses, high efficiency
• Low forward voltage drop
• High forward surge capability
• High frequency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of
245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s, per
JESD 22-B106 (for TO-220AC and ITO-220AC package)
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
2
MBR1090
MBR10100
PIN 1
PIN 2
2
1
MBRF1090
MBRF10100
PIN 1
PIN 2
1
CASE
TO-263AB
K
TYPICAL APPLICATIONS
2
1
MBRB1090
MBRB10100
PIN 1
PIN 2
K
HEATSINK
For use in high frequency rectifier of switching mode power
supplies, freewheeling diodes, DC/DC converters or polarity
protection application.
MECHANICAL DATA
Case:
TO-220AC, ITO-220AC, TO-263AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
10 A
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
V
F
T
J
max.
Package
Diode variations
90 V, 100 V
150 A
0.65 V
150 °C
TO-220AC, ITO-220AC,
TO-263AB
Single die
Terminals:
Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity:
As marked
Mounting Torque:
10 in-lbs maximum
per
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
Maximum average forward rectified current at T
C
= 133 °C
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
Non-repetitive avalanche energy at T
J
= 25 °C, L = 60 mH
Peak repetitive reverse current at t
p
= 2 μs, 1 kHz,
T
J
= 38 °C ± 2 °C per diode
Voltage rate of change (rated V
R
)
Isolation voltage (ITO-220AC only) from terminal to heatsink t = 1 min
Operating junction and storage temperature range
SYMBOL
V
RRM
V
RWM
V
DC
I
F(AV)
I
FSM
E
AS
I
RRM
dV/dt
V
AC
T
J
, T
STG
MBR1090
90
90
90
10
150
130
0.5
10 000
1500
-65 to +150
MBR10100
100
100
100
UNIT
V
V
V
A
A
mJ
A
V/μs
V
°C
Revision: 11-Sep-13
Document Number: 89034
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

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Description 5 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB 5 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB 5 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB 5 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB 5 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB 5 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB 5 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB 5 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB
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