DSEP 60-03A
HiPerFRED
TM
Epitaxial Diode
with soft recovery
I
FAV
= 60 A
V
RRM
= 300 V
t
rr
= 30 ns
A
C
V
RSM
V
300
V
RRM
V
300
Type
TO-247 AD
DSEP 60-03A
C
A
C (TAB)
A = Anode, C = Cathode, TAB = Cathode
D4
Symbol
I
FRMS
I
FAVM
I
FSM
E
AS
I
AR
T
VJ
T
VJM
T
stg
P
tot
M
d
Weight
Conditions
T
C
= 110°C; rectangular, d = 0.5
T
VJ
= 45°C; t
p
= 10 ms (50 Hz), sine
T
VJ
= 25°C; non-repetitive
I
AS
= 3.5 A; L = 180 µH
V
A
= 1.5·V
R
typ.; f = 10 kHz; repetitive
Maximum Ratings
70
60
700
1.6
A
A
A
de
mJ
A
0.4
°C
°C
°C
W
Nm
g
6
650
2.5
1.25
1.71
0.65
µA
mA
V
V
K/W
K/W
ns
4.8
A
w
T
C
= 25°C
mounting torque
typical
Conditions
-55...+175
175
-55...+150
Symbol
I
R
①
fo
r
T
VJ
= 25°C V
R
= V
RRM
T
VJ
= 150°C V
R
= V
RRM
I
F
= 60 A;
ne
0.25
30
230
0.8...1.2
Characteristic Values
typ.
max.
V
F
②
R
thJC
R
thCH
t
rr
I
RM
No
I
F
= 1 A; -di/dt = 300 A/µs;
V
R
= 30 V; T
VJ
= 25°C
V
R
= 100 V; I
F
= 130 A; -di
F
/dt = 100 A/µs
T
VJ
= 100°C
t
T
VJ
= 150°C
T
VJ
= 25°C
Pulse test:
①
Pulse Width = 5 ms, Duty Cycle < 2.0 %
②
Pulse Width = 300
µs,
Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified
IXYS reserves the right to change limits, test conditions and dimensions.
Recommended replacement:
DPG 60I300HA
20071025a
© 2007 IXYS All rights reserved
si
gn
Features
•
•
•
•
•
•
•
Applications
Advantages
International standard package
Planar passivated chips
Very short recovery time
Extremely low switching losses
Low I
RM
-values
Soft recovery behaviour
Epoxy meets UL 94V-0
• Antiparallel diode for high frequency
switching devices
• Antisaturation diode
• Snubber diode
• Free wheeling diode in converters
and motor control circuits
• Rectifiers in switch mode power
supplies (SMPS)
• Inductive heating
• Uninterruptible power supplies (UPS)
• Ultrasonic cleaners and welders
• Avalanche voltage rated for reliable
operation
• Soft reverse recovery for low
EMI/RFI
• Low I
RM
reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
Dimensions see Outlines.pdf
1
-
2
DSEP 60-03A
160
A
I
F
120
T
VJ
=150°C
T
VJ
=100°C
80
T
VJ
= 25°C
Q
r
800
T
VJ
= 100°C
nC
600
I
F
= 120A
I
F
= 60A
I
F
= 30A
V
R
= 150V
I
RM
25
A
20
T
VJ
= 100°C
V
R
= 150V
I
F
= 120A
I
F
= 60A
I
F
= 30A
15
400
10
40
200
5
Fig. 1 Forward current I
F
versus V
F
Fig. 2 Reverse recovery charge Q
r
versus -di
F
/dt
90
ns
Fig. 3 Peak reverse current I
RM
versus -di
F
/dt
1.4
si
14
V
12
V
FR
10
t
fr
V
FR
8
6
4
0
200
400
gn
R
thi
(K/W)
0.324
0.125
0.201
0
0.0
0.5
1.0
1.5 V
V
F
2.0
0
100
0
A/µs 1000
-di
F
/dt
0
200
400
600 A/µs 1000
800
-di
F
/dt
T
VJ
= 100°C
V
R
= 150V
T
VJ
= 100°C
I
F
= 60A
0.85
µs
0.80
t
fr
0.75
1.2
K
f
1.0
I
RM
t
rr
80
70
Q
r
60
0.8
w
I
F
= 120A
I
F
= 60A
I
F
= 30A
de
i
1
2
3
1
0.70
0.6
ne
0.65
0
40
80
120 °C 160
T
VJ
r
0.4
50
0
200
400
600
-di
F
/dt
800
A/µs 1000
Fig. 4 Dynamic parameters Q
r
, I
RM
versus T
VJ
1
K/W
0.1
Z
thJC
0.01
fo
0.60
600 A/µs 1000
800
di
F
/dt
Fig. 5 Recovery time t
rr
versus -di
F
/dt
Fig. 6 Peak forward voltage V
FR
and t
fr
versus di
F
/dt
Constants for Z
thJC
calculation:
t
i
(s)
0.005
0.0003
0.038
0.001
No
t
DSEP 60-03A
0.0001
0.00001
0.0001
0.001
0.01
0.1
t
s
NOTE: Fig. 2 to Fig. 6 shows typical values
2
-
2
© 2007 IXYS All rights reserved
20071025a
Fig. 7 Transient thermal resistance junction to case
Talking
京公网安备 11010802033920号
EEWORLD
