DRD1010F60
Rectifier Diode
DS5984-2 June 13 (LN30615)
FEATURES
Double Side Cooling
High Surge Capability
KEY PARAMETERS
V
RRM
I
F(AV)
I
FSM
6000V
1015A
16500A
APPLICATIONS
Rectification
Free-wheel Diode
DC Motor Control
Power Supplies
Welding
Battery Chargers
VOLTAGE RATINGS
Part and
Ordering
Number
Repetitive Peak
Voltages
V
RRM
V
6000
5900
5800
5700
5600
5500
Conditions
DRD1010F60
DRD1010F59
DRD1010F58
DRD1010F57
DRD1010F56
DRD1010F55
V
RSM
= V
RRM
+100V
Lower voltage grades available.
(See Package Details for further information)
Fig. 1 Package outlines
ORDERING INFORMATION
When ordering, select the required part number
shown in the Voltage Ratings selection table, e.g.:
DRD1010F59
Note: Please use the complete part number when ordering
and quote this number in any future correspondence
relating to your order.
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DRD1010F60
SEMICONDUCTOR
CURRENT RATINGS
T
case
= 75°C unless stated otherwise
Symbol
Double Side Cooled
I
F(AV)
I
F(RMS)
I
F
Parameter
Test Conditions
Max.
Units
Mean forward current
RMS value
Continuous (direct) on-state current
Half wave resistive load
-
-
1320
2073
1897
A
A
A
Single Side Cooled (Anode side)
I
F(AV)
I
F(RMS)
I
F
Mean forward current
RMS value
Continuous (direct) on-state current
Half wave resistive load
-
-
947
1487
1283
A
A
A
T
case
= 100°C unless stated otherwise
Symbol
Double Side Cooled
I
F(AV)
I
F(RMS)
I
F
Parameter
Test Conditions
Max.
Units
Mean forward current
RMS value
Continuous (direct) on-state current
Half wave resistive load
-
-
1015
1594
1480
A
A
A
Single Side Cooled (Anode side)
I
F(AV)
I
F(RMS)
I
F
Mean forward current
RMS value
Continuous (direct) on-state current
Half wave resistive load
-
-
680
1067
920
A
A
A
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DRD1010F60
-3-
SEMICONDUCTOR
SURGE RATINGS
Symbol
I
FSM
It
I
FSM
It
2
2
Parameter
Surge (non-repetitive) on-state current
I t for fusing
Surge (non-repetitive) on-state current
I t for fusing
2
2
Test Conditions
10ms half sine, T
case
= 150°C
V
R
= 50% V
RRM
- ¼ sine
10ms half sine, T
case
= 150°C
V
R
= 0
Max.
13.5
0.92
16.5
1.425
Units
kA
MA s
kA
MA s
2
2
THERMAL AND MECHANICAL RATINGS
Symbol
R
th(j-c)
Parameter
Thermal resistance – junction to case
Test Conditions
Double side cooled
Single side cooled
DC
Anode DC
Cathode DC
R
th(c-h)
Thermal resistance – case to heatsink
Clamping force 19.5kN
(with mounting compound)
T
vj
Virtual junction temperature
On-state (conducting)
Reverse (blocking)
T
stg
F
m
Storage temperature range
Clamping force
Double side
Single side
Min.
-
-
-
-
-
-
-
-55
18.0
Max.
0.022
0.038
0.052
0.004
0.008
160
150
175
22.0
Units
°C/W
°C/W
°C/W
°C/W
°C/W
°C
°C
°C
kN
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DRD1010F60
SEMICONDUCTOR
CHARACTERISTICS
Symbol
V
FM
I
RM
Q
S
I
rr
V
TO
r
T
Parameter
Forward voltage
Peak reverse current
Total stored charge
Peak reverse recovery current
Threshold voltage
Slope resistance
Test Conditions
At 3400A peak, T
case
= 25°C
At V
DRM,
T
case
= 150°C
I
F
= 2000A, dI
RR
/dt =3A/µs
T
case
= 150°C, V
R
=100V
At T
vj
= 150°C
At T
vj
= 150°C
Min.
-
-
-
-
-
-
Max.
2.1
75
4500
120
1.0
0.42
Units
V
mA
µC
A
V
m
CURVES
4000
Mean Power Dissipation - (W)
3000
2000
dc
1000
1/2 wave
3 phase sq.
6 phase sq.
12 phase sq.
0
0
500
1000
1500
2000
2500
Mean forward current I
F(AV)
- (A)
Fig.2 Maximum (limit) on-state characteristics
Fig.3 Dissipation curves
V
TM
EQUATION
V
TM
= A + Bln (I
T
) + C.I
T
+D.I
T
Where
A = 0.819645
B = -0.13673
-5
C = 5.73x10
D = 0.042435
these values are valid for T
j
= 150 °C for I
F
500A to 5000A
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DRD1010F60
-5-
SEMICONDUCTOR
Fig.4 Total stored charge
Fig.5 Maximum reverse recovery current
Fig.6 Surge (non-repetitive) forward current vs time
(with 50% V
RRM
at T
case
150°C)
Fig.7 Maximum (limit) transient thermal impedance-
junction to case
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Embedded System
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