DIM250PKM33-TL000
IGBT Chopper Module
DS6117-1 July 2013 (LN30666)
FEATURES
Low V
CE(sat)
Device
10µs Short Circuit Withstand
High Thermal Cycling Capability
High Current Density Enhanced DMOS SPT
Isolated AlSiC Base with AlN Substrates
KEY PARAMETERS
V
CES
V
CE(sat)
* (typ)
I
C
(max)
I
C(PK)
(max)
3300V
2.0V
250A
500A
* Measured at the auxiliary terminals
APPLICATIONS
1(E1/K)
Choppers
Motor Controllers
Power Supplies
Traction Auxiliaries
2(C1)
5(E )
4(G )
8(C )
1
1
1
3(A)
The Powerline range of high power modules includes
half bridge, chopper, dual, single and bi-directional
switch configurations covering voltages from 1200V to
6500V and currents up to 2400A.
The DIM250PKM33-TL000 is a Low V
CE(sat)
3300V,
n-channel enhancement mode, insulated gate bipolar
transistor (IGBT) chopper module configured with the
upper arm of the bridge controlled. The IGBT has a
wide reverse bias safe operating area (RBSOA). This
device is optimised for traction drives and other
applications requiring high thermal cycling capability.
The module incorporates an electrically isolated base
plate and low inductance construction enabling circuit
designers to optimise circuit layouts and utilise
grounded heat sinks for safety
.
Fig. 1 Circuit configuration
ORDERING INFORMATION
Order As:
DIM250PKM33-TL000
Outline type code: P
Note: When ordering, please use the complete part
number
(See Fig. 11 for further information)
Fig. 2 Package
Caution:
This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
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DIM250PKM33-TL000
ABSOLUTE MAXIMUM RATINGS
Stresses above those listed under ‘Absolute Maximum Ratings’ may cause permanent damage to the device. In
extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package.
Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect
device reliability.
T
case
= 25°C unless stated otherwise
Symbol
V
CES
V
GES
I
C
I
C(PK)
P
max
It
V
isol
Q
PD
2
Parameter
Collector-emitter voltage
Gate-emitter voltage
Continuous collector current
Peak collector current
Max. transistor power dissipation
Diode I t value – IGBT Arm
Diode I t value – Diode Arm
Isolation voltage – per module
Partial discharge – per module
2
2
Test Conditions
V
GE
= 0V
Max.
3300
±20
Units
V
V
A
A
kW
kA s
kA s
V
pC
2
2
T
case
= 115°C
1ms, T
case
= 140°C
T
case
= 25°C, T
j
= 150°C
V
R
= 0, t
p
= 10ms, T
j
= 150ºC
250
500
2.6
20
20
Commoned terminals to base plate.
AC RMS, 1 min, 50Hz
IEC1287, V
1
= 3500V, V
2
= 2600V, 50Hz RMS
6000
10
THERMAL AND MECHANICAL RATINGS
Internal insulation material:
Baseplate material:
Creepage distance:
Clearance:
CTI (Comparative Tracking Index):
AlN
AlSiC
33mm
20mm
>600
Symbol
R
th(j-c)
Parameter
Thermal resistance – transistor
Thermal resistance – diode
(IGBT Arm)
Thermal resistance – diode
(Diode Arm)
Thermal resistance –
case to heatsink (per module)
Junction temperature
Diode
Test Conditions
Continuous dissipation -
junction to case
Continuous dissipation -
junction to case
Mounting torque 5Nm
(with mounting grease)
Transistor
Min
-
-
-
-
-
-
-40
-
-
Typ.
-
-
-
-
-
-
-
-
-
Max
48
96
96
16
150
150
125
5
4
Units
°C/kW
°C/kW
°C/kW
°C/kW
°C
°C
°C
Nm
Nm
R
th(j-c)
R
th(c-h)
T
j
T
stg
Storage temperature range
Screw torque
-
Mounting – M6
Electrical connections – M5
2/8
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM250PKM33-TL000
ELECTRICAL CHARACTERISTICS
T
case
= 25°C unless stated otherwise.
Symbol
Parameter
Test Conditions
V
GE
= 0V, V
CE
= V
CES
I
CES
Collector cut-off current
V
GE
= 0V, V
CE
= V
CES
, T
case
= 125°C
V
GE
= 0V, V
CE
= V
CES
, T
case
= 150°C
I
GES
V
GE(TH)
Gate leakage current
Gate threshold voltage
V
GE
= ± 20V, V
CE
= 0V
I
C
= 20mA, V
GE
= V
CE
V
GE
= 15V, I
C
= 250A
V
CE(sat)
†
Min
Typ
Max
1
15
25
1
Units
mA
mA
mA
μA
V
V
V
V
A
A
V
V
V
V
V
V
nF
μC
nF
nH
μ
5.7
2.0
2.6
2.8
250
500
2.4
Collector-emitter
saturation voltage
V
GE
= 15V, I
C
= 250A, T
j
= 125°C
V
GE
= 15V, I
C
= 250A, T
j
= 150°C
I
F
I
FM
Diode forward current
Diode maximum forward
current
†
Diode forward voltage
(IGBT arm)
‡
Diode forward voltage
(Diode arm)
†
Diode forward voltage
(IGBT arm)
‡
Diode forward voltage
(Diode arm)
†
Diode forward voltage
(IGBT arm)
‡
Diode forward voltage
(Diode arm)
Input capacitance
Gate charge
Reverse transfer capacitance
Module inductance
Internal transistor resistance
DC
t
p
= 1ms
I
F
= 250A
2.5
2.5
I
F
= 250A, T
j
= 125°C
2.6
2.4
I
F
= 250A, T
j
= 150°C
2.5
V
CE
= 25V, V
GE
= 0V, f = 1MHz
±15V Including external C
ge
V
CE
= 25V, V
GE
= 0V, f = 1MHz
45
5
1
40
500
T
j
= 150°C, V
CC
= 2500V
t
p
≤ 10μs, V
GE
≤ 15V
V
CE (max)
= V
CES
– L x dI/dt
IEC 60747-9
*
V
F
C
ies
Q
g
C
res
L
M
R
INT
SC
Data
Short circuit current, I
SC
950
A
Note:
†
Measured at the auxiliary terminals
‡
Measured at the power busbars
* L is the circuit inductance + L
M
Caution:
This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
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DIM250PKM33-TL000
ELECTRICAL CHARACTERISTICS
T
case
= 25°C unless stated otherwise
Symbol
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
ON
Q
rr
I
rr
E
rec
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse recovery current
Diode reverse recovery energy
Test Conditions
I
C
= 250A
V
GE
= ±15V
V
CE
= 1800V
R
g(ON)
= 10
R
g(OFF)
= 10
C
GE
= 56nF
L
S
~ 150nH
I
F
= 250A
V
CE
= 1800V
dI
F
/dt = 700A/μs
Min
Typ.
2700
610
650
960
430
400
140
150
170
Max
Units
ns
ns
mJ
ns
ns
mJ
μC
A
mJ
T
case
= 125°C unless stated otherwise
Symbol
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse recovery current
Diode reverse recovery energy
Test Conditions
I
C
= 250A
V
GE
= ±15V
V
CE
= 1800V
R
g(ON)
= 10
R
g(OFF)
= 10
C
GE
= 56nF
L
S
~ 150nH
I
F
= 250A
V
CE
= 1800V
dI
F
/dt = 700A/μs
Min
Typ.
2750
590
680
1000
460
520
230
190
280
Max
Units
ns
ns
mJ
ns
ns
mJ
μC
A
mJ
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
ON
Q
rr
I
rr
E
rec
T
case
= 150°C unless stated otherwise
Symbol
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse recovery current
Diode reverse recovery energy
Test Conditions
I
C
= 250A
V
GE
= ±15V
V
CE
= 1800V
R
g(ON)
= 10
R
g(OFF)
= 10
C
GE
= 56nF
L
S
~ 150nH
I
F
= 250A
V
CE
= 1800V
dI
F
/dt = 700A/μs
Min
Typ.
2760
590
750
940
460
550
270
200
330
Max
Units
ns
ns
mJ
ns
ns
mJ
μC
A
mJ
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
ON
Q
rr
I
rr
E
rec
4/8
Caution:
This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
DIM250PKM33-TL000
Fig. 3 Typical output characteristics
Fig. 4 Typical output characteristics
Fig. 5 Typical switching energy vs collector current
Fig. 6 Typical switching energy vs gate resistance
Caution:
This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
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