DFM250PXM33-TS000
Fast Recovery Diode Module
DS6100-1 May 2013 (LN30467)
FEATURES
Low Reverse Recovery Charge
High Switching Speed
Low Forward Volt Drop
Isolated AlSiC Base With AlN Substrates
High Current Density Enhanced DMOS
Low FIT Rate
KEY PARAMETERS
V
RRM
V
F
I
F
I
FM
(typ)
(max)
(max)
3300V
2.4V
250A
500A
APPLICATIONS
Chopper Diodes
Boost and Buck Converters
2(K2)
1(A2/K1)
3(A1)
Free-wheel Circuits
Motor Drives
Resonant Converters
Induction Heating
Multi-level Switch Inverters
Fig. 1 Circuit configuration
The DFM250PXM33-TS000 is a series pair 3300V,
fast recovery diode (FRD) module. Designed for low
power loss, the module is suitable for a variety of high
voltage applications in motor drives and power
conversion.
Fast switching times and low reverse recovery losses
allow high frequency operation, making the device
suitable for the latest drive designs employing PWM
and high frequency switching.
The module incorporates an electrically isolated base
plate and low inductance construction enabling circuit
designers to optimise circuit layouts and utilise
grounded heat sinks for safety
.
ORDERING INFORMATION
Order As:
Outline type code: P
(See Fig. 7 for further information)
Fig. 2 Package
DFM250PXM33-TS000
Note: When ordering, please use the complete part
number
1
/
6
www.dynexsemi.com
DFM250PXM33-TS000
ABSOLUTE MAXIMUM RATINGS
Stresses above those listed under ‘Absolute Maximum Ratings’ may cause permanent damage to the device. In
extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package.
Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect
device reliability.
T
case
= 25°C unless stated otherwise
Symbol
V
RRM
I
F
I
FM
It
P
max
V
isol
Q
PD
V
RRM DC
2
Parameter
Repetitive peak reverse voltage
Forward current (per arm)
Max. forward current (per arm)
I t value fuse current rating
Max. power dissipation
Isolation voltage – per module
Partial discharge – per module
DC Voltage stability
2
Test Conditions
T
j
= 150°C
DC, T
case
= 90°C
T
case
= 135°C, t
p
= 1ms
V
R
= 0, t
p
= 10ms, T
j
= 150°C
T
case
= 25°C, T
j
= 150°C
Commoned terminals to base plate.
AC RMS, 1 min, 50Hz
IEC1287, V
1
= 3500V, V
2
= 2600V, 50Hz RMS
25°C at sea level, 100 FITs
Max.
3300
250
500
20
1.3
6000
10
2100
Units
V
A
A
kA s
kW
V
pC
V
2
THERMAL AND MECHANICAL RATINGS
Internal insulation material:
Baseplate material:
Creepage distance:
Clearance:
CTI (Comparative Tracking Index):
Symbol
R
th(j-c)
R
th(c-h)
T
j
T
stg
Parameter
Thermal resistance (per arm)
Thermal resistance –
case to heatsink (per module)
Junction temperature
Storage temperature range
Mounting – M6
Screw Torque
Electrical connections – M5
AlN
AlSiC
33mm
20mm
>600
Test Conditions
Continuous dissipation –
junction to case
Mounting torque 5Nm
(with mounting grease)
Min
-
-
-40
-40
-
-
Typ.
-
-
-
-
-
-
Max
96
16
150
125
5
4
Units
°C/kW
°C/kW
°C
°C
Nm
Nm
2/6
www.dynexsemi.com
DFM250PXM33-TS000
STATIC ELECTRICAL CHARACTERISTICS – PER ARM
T
case
= 25°C unless stated otherwise.
Symbol
I
RM
Parameter
Peak reverse current
Test Conditions
V
R
= 3300V, T
j
= 150°C
I
F
= 250A
V
F
Forward voltage
I
F
= 250A, T
j
= 125°C
I
F
= 250A, T
j
= 150°C
L
M
Inductance
-
2.4
2.5
2.4
40
Min
Typ
Max
15
Units
mA
V
V
V
nH
DYNAMIC ELECTRICAL CHARACTERISTICS – PER ARM
T
case
= 25°C unless stated otherwise
Symbol
Q
rr
I
rr
E
rec
Parameter
Reverse recovery charge
Peak reverse recovery current
Reverse recovery energy
Test Conditions
I
F
= 250A
V
R
= 1800V
dI
F
/dt = 700A/μs
Min
Typ.
140
155
165
Max
Units
μC
A
mJ
T
case
= 125°C unless stated otherwise
Symbol
Parameter
Reverse recovery charge
Peak reverse recovery current
Reverse recovery energy
Test Conditions
I
F
= 250A
V
R
= 1800V
dI
F
/dt = 700A/μs
Min
Typ.
235
195
285
Max
Units
μC
A
mJ
Q
rr
I
rr
E
rec
T
case
= 150°C unless stated otherwise
Symbol
Parameter
Reverse recovery charge
Peak reverse recovery current
Reverse recovery energy
Test Conditions
I
F
= 250A
V
R
= 1800V
dI
F
/dt = 700A/μs
Min
Typ.
265
200
325
Max
Units
μC
A
mJ
Q
rr
I
rr
E
rec
3
/
6
www.dynexsemi.com
DFM250PXM33-TS000
Fig. 3 Diode typical forward characteristics
Fig. 4 Transient thermal impedance
Fig. 5 DC current rating vs case temperature
Fig. 6 Reverse Bias Safe Operating Area (RBSOA)
4/6
www.dynexsemi.com
DFM250PXM33-TS000
PACKAGE DETAILS
For further package information, please visit our website or contact Customer Services.
All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
Nominal Weight: 500g
Module Outline Type Code:
P
Fig. 7 Module outline drawing
5
/
6
www.dynexsemi.com
京公网安备 11010802033920号
EEWORLD
