LESHAN RADIO COMPANY, LTD.
Power MOSFET
200 mAmps, 50 Volts
N–Channel SC–70
Typical applications are dc–dc converters, power management in
portable and battery–powered products such as computers, printers,
PCMCIA cards, cellular and cordless telephones.
Low Threshold Voltage (V
GS(th)
: 0.5V...1.5V) makes it ideal for low
voltage applications
LBSS139WT1G
3
•
1
2
•
Miniature SC–70 Surface Mount Package saves board space
•
Pb−Free Package May be Available. The G−Suffix Denotes a
Pb−Free Lead Finish
•
ESD Protected:1500V
SOT–323 / SC – 70
200 mAMPS
50 VOLTS
R
DS(on)
= 3.5
W
N - Channel
3
d
MAXIMUM RATINGS (T
A
= 25
o
C unless otherwise noted)
Rating
Drain–to–Source Voltage
Gate–to–Source Voltage – Continuous
Drain Current
– Continuous @ TA = 25°C
– Pulsed Drain Current (tp
≤
10
µs)
Total Power Dissipation @ TA = 25°C
Operating and Storage Temperature
Range
Thermal Resistance – Junction–to–Ambient
Maximum Lead Temperature for Soldering
Purposes, for 10 seconds
Symbol
V
DSS
V
GS
I
D
I
DM
P
D
T
J,
T
stg
R
θJA
T
L
Value
50
±
20
200
800
150
– 55 to
150
833
260
mW
°C
°C/W
°C
Unit
Vdc
Vdc
mA
1
g
s
2
MARKING DIAGRAM
& PIN ASSIGNMENT
J2
J2 = Device Code
M = Month Code
ORDERING INFORMATION
Device
LBSS139WT1G
LBSS139WT3G
Package
SC-70
SC-70
Shipping
3000 Tape & Reel
10000 Tape & Reel
Rev .A 1/6
M
LESHAN RADIO COMPANY, LTD.
LBSS139WT1G
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 250
µAdc)
Zero Gate Voltage Drain Current
(V
DS
= 25 Vdc, V
GS
= 0 Vdc)
(V
DS
= 50 Vdc, V
GS
= 0 Vdc)
Gate–Source Leakage Current (V
GS
=
±
20 Vdc, V
DS
= 0 Vdc)
ON CHARACTERISTICS
(Note 1.)
Gate–Source Threshold Voltage
(V
DS
= V
GS
, I
D
= 1.0 mAdc)
Static Drain–to–Source On–Resistance
(V
GS
= 2.75 Vdc, I
D
< 200 mAdc, T
A
= –40°C to +85°C)
(V
GS
= 5.0 Vdc, I
D
= 200 mAdc)
Forward Transconductance
(V
DS
= 25 Vdc, I
D
= 200 mAdc, f = 1.0 kHz)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(V
DS
= 25 Vdc, V
GS
= 0, f = 1 MHz)
(V
DS
= 25 Vdc, V
GS
= 0, f = 1 MHz)
(V
DG
= 25 Vdc, V
GS
= 0, f = 1 MHz)
C
iss
C
oss
C
rss
–
–
–
22.8
3.5
2.9
–
–
–
pF
V
GS(th)
r
DS(on)
–
–
g
fs
100
5.6
–
–
10
3.5
–
mmhos
0.5
–
1.5
Vdc
Ohms
V
(BR)DSS
I
DSS
–
–
I
GSS
–
–
–
–
0.1
0.5
±10
µAdc
50
–
–
Vdc
µAdc
Symbol
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS
(Note 2.)
Turn–On Delay Time
Turn–Off Delay Time
(V
DS
= 30 Vdc, I
DS
= 0.5 Adc,)
1. Pulse Test: Pulse Width
≤
300
µs,
Duty Cycle
≤
2%.
2. Switching characteristics are independent of operating junction temperature.
t
d(on)
t
d(off)
–
–
3.8
19
–
–
ns
Rev .A 2/6
LESHAN RADIO COMPANY, LTD.
LBSS139WT1G
TYPICAL ELECTRICAL CHARACTERISTICS
Output Characteristics
1.0
Drain-Source On Resistance
2.6
2.4
I
D
- Drain Current (A)
V
GS
= 4,5,6,8,10 V
3.0 V
R
DS(ON)
- On Resistance (Ω)
0.8
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
V
GS
= 10 V
V
GS
= 4.5V
0.6
0.4
0.2
0.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
DS
- Drain-Source Voltage (V)
I
D
- Drain Current (A)
Transfer Characteristics
2.4
I
D
= 0.5 A
Gate Threshold Voltage
1.6
I
DS
= 250
μ
A
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-50 -25
2.0
1.8
1.6
1.4
1.2
1.0
0.8
1
2
3
4
5
6
7
8
9
10
Normalized Threshold Voltage
2.2
R
DS(ON)
- On Resistance (Ω)
0
25
50
75 100 125 150
V
GS
- Gate-Source Voltage (V)
T
j
- Junction Temperature (°C)
Rev .A 3/6
LESHAN RADIO COMPANY, LTD.
LBSS139WT1G
TYPICAL ELECTRICAL CHARACTERISTICS
Drain-Source On Resistance
1.6
V
GS
= 10 V
I
D
= 0.5 A
Source-Drain Diode Forward
2
Normalized On Resistance
1.4
1
I
S
- Source Current (A)
T
j
= 150 C
o
1.2
T
j
=25 C
o
1.0
0.8
-50 -25
0
25
R
ON
@T
j
= 25 C: 1.2
Ω
50
75 100 125 150
o
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
T
j
- Junction Temperature (°C)
V
SD
- Source-Drain Voltage (V)
40
35
30
Ciss
Capacitance
Frequency = 1 MHz
Gate Charge
4.5
4.0
V
DS
= 10 V
I
DS
= 0.5 A
V
GS
- Gate-Source Voltage (V)
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
C - Capacitance (pF)
25
20
15
10
5
Crss
0
0
5
10
15
20
25
30
Coss
V
DS
- Drain-Source Voltage (V)
Q
G
- Gate Charge (pC)
Rev .A 4/6
LESHAN RADIO COMPANY, LTD.
LBSS139WT1G
TYPICAL ELECTRICAL CHARACTERISTICS
Drain-Source On Resistance
1.6
I
D
= 0.5 A
3.0
2.8
Drain-Source On Resistance
V
GS
= 4.5V
T
J
= 125 C
O
R
DS(ON)
– On Resistance(Ω)
1.4
Normalized On Resistance
V
GS
= 4.5 V
1.2
V
GS
= 10 V
1.0
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
T
J
= -55 C
O
T
J
= 85 C
O
T
J
= 25 C
O
0.8
0.6
R
ON
@T
j
= 25 C: 1.2
Ω
0.4
-50 -25
0
25
50
75 100 125 150
o
T
j
- Junction Temperature (°C)
I
D
- Drain Current (A)
Drain-Source On Resistance
3.0
2.8
V
GS
= 10V
1.2
R
DS(ON)
– On Resistance(Ω)
2.6
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
T
J
= -55 C
O
1.0
T
J
= 125 C
T
J
= 85 C
T
J
= 25 C
O
O
O
I
D
- Drain Current (A)
2.4
0.8
0.6
T
j
=125 C
T
j
=25 C
T
j
=-55 C
o
o
o
0.4
0.2
0.0
0
1
2
3
4
5
6
I
D
- Drain Current (A)
V
GS
– Gate Voltage (V)
Rev .A 5/6
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