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XD1008-BD_15

Description
0.03 MHz - 40000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
CategoryTopical application    Wireless rf/communication   
File Size888KB,10 Pages
ManufacturerMACOM
Websitehttp://www.macom.com
Download Datasheet Parametric Compare View All

XD1008-BD_15 Overview

0.03 MHz - 40000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER

XD1008-BD_15 Parametric

Parameter NameAttribute value
Minimum operating temperature-55 Cel
Maximum input power17 dBm
Maximum operating frequency40000 MHz
Minimum operating frequency0.0300 MHz
Processing package descriptionDIE-11
stateACTIVE
structureCOMPONENT
terminal coatingGOLD
Impedance characteristics50 ohm
Microwave RF TypeWIDE BAND MEDIUM POWER
XD1008-BD
Receiver
30 kHz-40 GHz
Features
15 dB Gain
22.5 dBm P1dB at 22 GHz
4.5 dB Noise Figure at 26 GHz
Unconditional Stability over Temperature Range
100% On-Wafer RF, DC and Output Power
Testing
100% Visual Inspection to MIL-STD-883 Method
2010
RoHS* Compliant and 260°C Reflow Compatible
Rev. V1
Chip Device Layout
Description
M/A-COM Tech’s 30 kHz - 40 GHz GaAs MMIC
distributed amplifier has a gain of 15 dB with a 4.5
dB noise figure at 26 GHz. This MMIC uses M/A-
COM Tech’s GaAs PHEMT device model
technology, and is based upon electron beam
lithography to ensure high repeatability and
uniformity. The chip has surface passivation to
protect and provide a rugged part with backside via
holes and gold metallization to allow either a
conductive epoxy or eutectic solder die attach
process. This device is well suited for microwave,
millimeter-wave, military, wideband and
instrumentation applications.
Absolute Maximum Ratings
1
Parameter
Supply Voltage (Vd)
Supply Current (Id)
Gate Bias Voltage (Vg1)
Gate Current (Ig1)
Gate Bias Voltage (Vg2)
Gate Current (Ig2)
CW Input Power (Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
-65 ºC
-55 ºC
+150 ºC
-9.5 V
-38 mA
-3.5 V
-20 mA
17 dBm
+165 ºC
+1 mA
+4.0 V
Min.
Max.
+10.0 V
340 mA
Ordering Information
Part Number
XD1008-BD-000V
XD1008-BD-EV1
Package
“V” - vacuum release gel
paks
evaluation module
(1) Absolute maximum ratings for continuous operation unless otherwise
noted.
Bias Settings
Parameter
Drain Current (Id), V=7 V, VG1=-2.5 V*, VG2=open circuit
Drain Current (Id), V=4 V, VG1=-2.5 V*, VG2=open circuit
Drain Voltage (Vd)
Gate Bias (Vg1)
Gate Bias (Vg2)
*approximate
1
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.macom.com
for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
Units
mA
mA
V
V
V
Min.
9.0
DC
-
10.0
-
Typ.
-
2.0
15.0
13.5
+3.0
Max.
Function
Supply drain current to device
Adjusted to set drain current
Adjusted for gain control

XD1008-BD_15 Related Products

XD1008-BD_15 XD1008-BD-000V XD1008-BD-EV1
Description 0.03 MHz - 40000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER 0.03 MHz - 40000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER 0.03 MHz - 40000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
Minimum operating temperature -55 Cel - -55 Cel
Maximum input power 17 dBm - 17 dBm
Maximum operating frequency 40000 MHz - 40000 MHz
Minimum operating frequency 0.0300 MHz - 0.0300 MHz
Processing package description DIE-11 - DIE-11
state ACTIVE - ACTIVE
structure COMPONENT - COMPONENT
terminal coating GOLD - GOLD
Impedance characteristics 50 ohm - 50 ohm
Microwave RF Type WIDE BAND MEDIUM POWER - WIDE BAND MEDIUM POWER
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