DCR1020N52
Phase Control Thyristor
DS5964-5 August 2014 (LN31842)
FEATURES
Double Side Cooling
High Surge Capability
KEY PARAMETERS
V
DRM
I
T(AV)
I
TSM
dV/dt*
dI/dt
5200V
1018A
14800A
1500V/µs
800A/µs
APPLICATIONS
Medium Voltage Soft Starts
High Voltage Power Supplies
Static Switches
*
Higher dV/dt selections available
VOLTAGE RATINGS
Part and
Ordering
Number
Repetitive Peak
Voltages
V
DRM
and V
RRM
V
5200
5000
Conditions
DCR1020N52*
DCR1020N50
T
vj
= -40°C to 125°C,
I
DRM
= I
RRM
= 100mA,
V
DRM
, V
RRM
t
p
= 10ms,
V
DSM
& V
RSM
=
V
DRM
& V
RRM
+ 100V
respectively
Outline type code: N
(See Package Details for further information)
Fig. 1 Package outline
Lower voltage grades available.
o
o
*5000V @ -40 C, 5200V @ 0 C
ORDERING INFORMATION
When ordering, select the required part number
shown in the Voltage Ratings selection table.
For example:
DCR1020N52
Note: Please use the complete part number when ordering
and quote this number in any future correspondence
relating to your order.
1/10
www.dynexsemi.com
DCR1020N52
SEMICONDUCTOR
CURRENT RATINGS
T
case
= 60°C unless stated otherwise
Symbol
Double Side Cooled
I
T(AV)
I
T(RMS)
I
T
Parameter
Test Conditions
Max.
Units
Mean on-state current
RMS value
Continuous (direct) on-state current
Half wave resistive load
-
-
1018
1599
1487
A
A
A
SURGE RATINGS
Symbol
I
TSM
It
2
Parameter
Surge (non-repetitive) on-state current
I t for fusing
2
Test Conditions
10ms half sine, T
case
= 125°C
V
R
= 0
Max.
14.8
1.097
Units
kA
MA s
2
THERMAL AND MECHANICAL RATINGS
Symbol
R
th(j-c)
Parameter
Thermal resistance – junction to case
Test Conditions
Double side cooled
Single side cooled
DC
Anode DC
Cathode DC
R
th(c-h)
Thermal resistance – case to heatsink
Clamping force 23 kN
(with mounting compound)
T
vj
T
stg
F
m
Virtual junction temperature
Storage temperature range
Clamping force
Blocking V
DRM
/
VRRM
Double side
Single side
Min.
-
-
-
-
-
-
-55
20.0
Max.
0.0221
0.041
0.0516
0.004
0.008
125
125
25.0
Units
°C/W
°C/W
°C/W
°C/W
°C/W
°C
°C
kN
2/10
www.dynexsemi.com
DCR1020N52
SEMICONDUCTOR
DYNAMIC CHARACTERISTICS
Symbol
I
RRM
/I
DRM
dV/dt
dI/dt
Parameter
Peak reverse and off-state current
Max. linear rate of rise of off-state voltage
Rate of rise of on-state current
Test Conditions
At V
RRM
/V
DRM
, T
case
= 125°C
To 67% V
DRM
, T
j
= 125°C, gate open
From 67% V
DRM
to 2x I
T(AV)
Gate source 30V, 10,
t
r
< 0.5µs, T
j
= 125°C
Repetitive 50Hz
Non-repetitive
Min.
-
-
-
-
Max.
100
1500
200
800
Units
mA
V/µs
A/µs
A/µs
V
T(TO)
Threshold voltage – Low level
Threshold voltage – High level
300A to 750A at T
case
= 125°C
750A to 4000A at T
case
= 125°C
300A to 750A at T
case
= 125°C
750A to 4000A at T
case
= 125°C
V
D
= 67% V
DRM
, gate source 30V, 10
t
r
= 0.5µs, T
j
= 25°C
-
-
-
-
-
0.948
1.078
0.783
0.610
3
V
V
m
m
µs
r
T
On-state slope resistance – Low level
On-state slope resistance – High level
t
gd
Delay time
t
q
Turn-off time
T
j
= 125°C,I
peak
= 1000A, t
p
= 1000us,
V
RM
= 100V, dI/dt = -5A/µs,
dV
DR
/dt = 20V/µs linear to 2000V
1000
µs
I
RR
Q
S
I
L
I
H
Reverse recovery current
Stored charge
Latching current
Holding current
I
T
= 1000A, t
p
= 1000us,T
j
= 125°C,
dI/dt = - 5A/µs, V
R
= 100V
T
j
= 25°C, V
D
= 5V
T
j
= 25°C, R
G-K
=
,
I
TM
= 500A, I
T
= 5A
90
2200
-
-
115
3800
3
300
A
µC
A
mA
3/10
www.dynexsemi.com
DCR1020N52
SEMICONDUCTOR
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol
V
GT
V
GD
I
GT
I
GD
Parameter
Gate trigger voltage
Gate non-trigger voltage
Gate trigger current
Gate non-trigger current
Test Conditions
V
DRM
= 5V, T
case
= 25°C
At 50% V
DRM,
T
case
= 125°C
V
DRM
= 5V, T
case
= 25°C
At 50% V
DRM,
T
case
= 125°C
Max.
1.5
0.4
350
15
Units
V
V
mA
mA
CURVES
4500
4000
Instantaneous on-state current, I
T
- (A)
3500
3000
2500
2000
1500
1000
500
0
0.5
1.5
2.5
min 25°C
max 25°C
min 125°C
max 125°C
3.5
4.5
Instantaneous on-state voltage, V
T
- (V)
Fig.2 Maximum & minimum on-state characteristics
V
TM
EQUATION
V
TM
= A + Bln (I
T
) + C.I
T
+D.I
T
Where
A = -0.069834
B = 0.220863
C = 0.000638
D = -0.013352
these values are valid for T
j
= 125°C for I
T
300A to 4000A
4/10
www.dynexsemi.com
DCR1020N52
SEMICONDUCTOR
16
14
12
Maximum case temperature, T
case
(
o
C )
130
120
110
100
90
80
70
180
120
90
60
30
Mean power dissipation - (kW)
10
8
6
4
2
0
0
1000
2000
60
50
40
30
20
10
0
180
120
90
60
30
3000
0
500
1000
1500
Mean on-state current, I
T(AV)
- (A)
Mean on-state current, I
T(AV)
- (A)
Fig.3 On-state power dissipation – sine wave
Fig.4 Maximum permissible case temperature,
double side cooled – sine wave
125
Maximum heatsink temperature, T
Heatsink
- ( ° C)
100
180
120
90
60
30
12
10
Mean power dissipation - (kW)
75
8
6
50
4
d.c.
180
120
90
60
30
0
1000
2000
3000
4000
25
2
0
0
500
1000
1500
0
Mean on-state current, I
T(AV)
- (A)
Mean on-state current, I
T(AV)
- (A)
Fig.6 On-state power dissipation – rectangular wave
Fig.5 Maximum permissible heatsink temperature,
double side cooled – sine wave
5/10
www.dynexsemi.com
京公网安备 11010802033920号
EEWORLD
