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EMD12

Description
Power management (dual digital transistors)
CategoryDiscrete semiconductor    The transistor   
File Size60KB,4 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Environmental Compliance
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EMD12 Overview

Power management (dual digital transistors)

EMD12 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerROHM Semiconductor
Reach Compliance Codecompli
Maximum collector current (IC)0.1 A
Minimum DC current gain (hFE)68
JESD-609 codee2
Number of components2
Polarity/channel typeNPN/PNP
Maximum power dissipation(Abs)0.15 W
surface mountYES
Terminal surfaceTin/Copper (Sn/Cu)
Transistor component materialsSILICON
EMD12 / UMD12N
Transistors
Power management
(dual digital transistors)
EMD12 / UMD12N
Features
1) Both the DTA144E and DTC144E in a EMT or UMT
package.
EMD12
0.5 0.5
1.0
1.6
0.22
(4)
(5)
(6)
(3)
(2)
1.2
1.6
(1)
0.13
Equivalent circuit
(3)
(2)
(1)
ROHM : EMT6
Each lead has same dimensions
R
1
R
2
DTr1
DTr2
R
2
(4)
UMD12N
(4)
R
1
0.2
(5)
(6)
(3)
0.65
1.3
0.65
0.7
0.5
R
1
=47kΩ
R
2
=47kΩ
(6)
1.25
2.1
0.15
(1)
Package, marking, and packaging specifications
Type
Package
Marking
Code
Basic ordering unit (pieces)
EMD12
EMT6
D12
T2R
8000
UMD12N
UMT6
D12
TR
3000
ROHM : UMT6
EIAJ : SC-88
0~0.1
0.1Min.
Each lead has same dimensions
Absolute maximum ratings
(Ta=25°C)
Parameter
Supply voltage
Input voltage
Output current
Power dissipation
Junction temperature
Storage temperature
Symbol
V
CC
V
IN
I
C
I
O
Pd
Tj
Tstg
Limits
50
40
−10
100
30
150(TOTAL)
150
−55
~
+150
Unit
V
V
mA
mA
mW
∗1
°C
°C
∗1
120mW per element must not be exceeded.
PNP type negative symbols have been omitted
External dimensions
(Units : mm)
Electrical characteristics
(Ta=25°C)
Parameter
Input voltage
Output voltage
Input current
Output current
DC current gain
Transition frequency
Input resistance
Resistance ratio
∗Transition
frequency of the device.
Symbol
V
I (off)
V
I (on)
V
O (on)
I
I
I
O (off)
G
I
f
T
R
1
R
2
/ R
1
PNP type negative symbols have been omitted
Min.
3
68
32.9
0.8
Typ.
0.1
250
47
1
Max.
0.5
0.3
0.18
0.5
61.1
1.2
Unit
V
V
V
mA
µA
MHz
kΩ
Conditions
V
CC
=5/−5V,
I
O
=100/−100µA
V
O
=0.3/−0.3V,
I
O
=2/−2mA
I
O
=10/−10mA,
I
I
=0.5/−0.5mA
V
I
=5/−5V
V
CC
=50/−50V,
V
I
=0V
I
O
=5/−5mA,
V
O
=5/−5V
V
CE
=10/−10V,
I
E
=−5/5mA,
f=100MHz
Rev.A
0.9
2.0
(5)
(2)
1/3

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